Publications HAL de Nozieres; Prebeanu; Dieny; Sousa du labo/EPI 1402;40366

2018

Conference papers

titre
Towards high density STT-MRAM at sub-20nm nodes
auteur
Steven Lequeux, V. Nguyen, N. Perrissin, J Chatterjee, L. Tille, S. Auffret, N. Strelkov, L. Buda-Prejbeanu, R. Sousa, E. Gautier, L. Vila, I. L Prejbeanu, B. Dieny
article
29th Magnetic Recording Conference (TMRC 2018), Aug 2018, Milpitas, CA, United States
Accès au texte intégral et bibtex
https://hal.science/hal-02131655/file/E1.pdf BibTex
titre
Impact of a laser pulse on a STT-MRAM bitcell: security and reliability issues
auteur
M. Kharbouche-Harrari, J. Postel-Pellerin, G. Di Pendina, R. Wacquez, D. Aboulkassimi, Marc Bocquet, R. Sousa, R. Delattre, M. Portal
article
2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), Jul 2018, Platja d'Aro, Spain. pp.243-244, ⟨10.1109/IOLTS.2018.8474088⟩
Accès au bibtex
BibTex
titre
Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices
auteur
N. Perrissin, S. Lequeux, N. Strelkov, L. Vila, L Buda-Prejbeanu, S. Auffret, R. Sousa, I. L Prejbeanu, B. Dieny
article
2018 International Conference on IC Design & Technology (ICICDT 2018), Jun 2018, Otrante, Italy. ⟨10.1109/ICICDT.2018.8399772⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01934505/file/Spin%20transfer%20torque%20magnetic%20random-access%20memory_%20-%20Towards%20sub-10nm%20devices%202018%20IEEE-ICICDT-BD%20%281%29.pdf BibTex
titre
Temperature Limits of Single and Composite Storage Layer with Different Thicknesses and Capping Materials for p-STT-MRAM Applications
auteur
Luc Tillie, Jyotirmoy Chatterjee, Ricardo Sousa, Stéphane Auffret, N. Lamard, Jude Guelfucci, Etienne Nowak, Bernard Diény, Ioan-Lucian Prejbeanu
article
2018 IEEE International Memory Workshop (IMW), May 2018, Kyoto, France. ⟨10.1109/IMW.2018.8388854⟩
Accès au bibtex
BibTex
titre
Towards high density STT-MRAM at sub-20nm nodes
auteur
V. D Nguyen, N. Perrissin, S. Lequeux, J. Chatterjee, L. Tille, S. Auffret, R. Sousa, E. Gautier, L. Vila, L. Prejbeanu, B. Dieny
article
2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. ⟨10.1109/VLSI-TSA.2018.8403867⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01934201/file/Digest_abstract_TMRC-2018_S-Lequeux-LP-BD_stickToAuthors.pdf BibTex
titre
P-STT-MRAM Thermal stability and modeling of its temperature dependence
auteur
L. Tillie, B. Dieny, R C Sousa, J Chatterjee, S. Auffret, N. Lamard, J Guelffucci, E Nowak, I. L Prejbeanu
article
VLSI-TSA, 2018, Hsinchu, Taiwan. ⟨10.1109/VLSI-TSA.2018.8403857⟩
Accès au bibtex
BibTex

2017

Conference papers

titre
Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications
auteur
V. D. Nguyen, P. Sabon, J. Chatterjee, L. Tillie, P. Veloso Coelho, S. Auffret, R. Sousa, L. Prejbeanu, E. Gautier, L. Vila, B. Dieny
article
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, CA, United States. ⟨10.1109/IEDM.2017.8268517⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01763666/file/IEDM%202017_submission%20vf_novel%20MTJ%20nanopatterning%20approach.pdf BibTex

2016

Conference papers

titre
Data retention extraction methodology for perpendicular STT-MRAM
auteur
L. Tillie, E. Nowak, R. Sousa, M.-C. Cyrille, B. Delaet, T. Magis, A. Persico, J. Langer, B. Ocker, I-L Prejbeanu, L. Perniola
article
Electron Devices Meeting (IEDM), 2016 IEEE International, Dec 2016, San Francisco, United States. ⟨10.1109/IEDM.2016.7838492⟩
Accès au bibtex
BibTex
titre
Control of Sub-Nanosecond Precessional Magnetic Switching in STT-MRAM Cells for SRAM Applications
auteur
B. Lacoste, M. Marins De Castro, R. C. Sousa, I. L. Prejbeanu, L. D. Buda-Prejbeanu, S. Auffret, U. Ebels, B. Rodmaq, B. Dieny
article
IEEE 8th International Memory Workshop (IMW), May 2016, Paris, France. ⟨10.1109/IMW.2016.7495262⟩
Accès au bibtex
BibTex

2015

Conference papers

titre
Hybrid STT/CMOS design of an interrupt based instant on/off mechanism for low-power SoC
auteur
Christophe Layer, Kotb Jabeur, Laurent Becker, Bernard Dieny, Stéphane Gros, Virgile Javerliac, Pierre Paoli, Fabrice Bernard-Granger
article
2015 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), Jul 2015, Montpellier, France. pp.315-320, ⟨10.1109/ISVLSI.2015.7⟩
Accès au bibtex
BibTex
titre
Robust magnetic full-adder with voltage sensing 2T/2MTJ cell
auteur
Erya Deng, You Wang, Zhaohao Wang, Jacques-Olivier Klein, Bernard Dieny, Guillaume Prenat, Weisheng Zhao
article
2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) (2015), Jul 2015, Boston, United States
Accès au bibtex
BibTex
titre
Synthesis of mono disperse magnetic nanoparticles prepared on block copolymer templates for medical imaging techniques
auteur
M. Morcrette, S. Tallegas, Hélène Joisten, G. Ortiz, R. Tiron, T. Baron, S. Lequien, Y. Hou, A. Bsiesy, B. Dieny
article
2015 IEEE International Magnetics Conference (INTERMAG), May 2015, Beijing, China. pp.1-1
Accès au bibtex
BibTex
titre
Tuning the Granular Contribution to Exchange Bias by Varying the Antiferromagnetic Material but Without Affecting the Ferromagnetic/Antiferromagnetic Interface
auteur
L. Frangou, K. Akmaldinov, C. Ducruet, I. Joumard, B. Dieny, Vincent Baltz
article
20th International Conference on Magnetism ICM, 2015, Barcelona, Spain. pp.1058-1065, ⟨10.1016/j.phpro.2015.12.175⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01683643/file/PhysProcedia_75_1058_%282015%29.pdf BibTex

2014

Conference papers

titre
Barrier Breakdown Mechanisms in MgO-Based Magnetic Tunnel Junctions and Correlation With Low-Frequency Noise
auteur
S. Amara, R. Sousa, H. Béa, Claire Baraduc, Ken Mackay, B. Dieny
article
International Reliability Physics Symposium, Jun 2014, Waikoloa, United States. pp.4340-4343, ⟨10.1109/IRPS.2014.6861097⟩
Accès au bibtex
BibTex
titre
InMRAM: Introductory course on Magnetic Random Access Memories for microelectronics students and engIneers
auteur
Gregory Di Pendina, Guillaume Prenat, Bernard Dieny
article
EWME 2014: 10th European Workshop on Microelectronics Education, May 2014, Tallinn, Estonia. ⟨10.1109/EWME.2014.6877388⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02059497/file/InMRAM%20-%20Introductory%20course%20on%20Magnetic%20Random%20Access%20memories%20for%20microelectronics%20students%20and%20engineers%20IEEE%202014.pdf BibTex
titre
Double barrier magnetic tunnel junctions with write/read mode select layer
auteur
P.-Y. Clement, Claire Baraduc, M. Chshiev, B. Dieny, L. Vila, C. Ducruet
article
IEEE 6th International Memory Workshop, May 2014, Tapei, Taiwan. ⟨10.1109/IMW.2014.6849366⟩
Accès au bibtex
BibTex

2012

Conference papers

titre
A compact model of precessional spin-transfer switching for MTJ with a perpendicular polarizer
auteur
Abdelilah Mejdoubi, Guillaune Prenat, Bernard Dieny
article
28th International Conference on Microelectronics (MIEL 2012), IEEE, May 2012, Nis, Serbia. ⟨10.1109/MIEL.2012.6222840⟩
Accès au texte intégral et bibtex
https://hal.science/hal-00922298/file/Conf_miel.pdf BibTex