Publications HAL de Anis,FEKI de la collection AMPERE

Article dans une revue

2015

ref_biblio
Anis Feki, Bruno Allard, David Turgis, Jean-Christophe Lafont, Faress Tissafi Drissi, et al.. Sub-threshold 10T SRAM bit cell with read/write XY selection. Solid-State Electronics, 2015, 106, pp.1 - 11. ⟨10.1016/j.sse.2014.11.018⟩. ⟨hal-01865455⟩
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Communication dans un congrès

2013

ref_biblio
Anis Feki, David Turgis, Jean Christophe Lafont, Bruno Allard. 280mV sense amplifier designed in 28nm UTBB FD-SOI technology using back-biasing control. S3S, Oct 2013, Monterey, Canada. ⟨10.1109/S3S.2013.6716525⟩. ⟨hal-01865466⟩
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2012

ref_biblio
Anis Feki, Bruno Allard, David Turgis, Jean-Christophe Lafont, Lorenzo Ciampolini. Proposal of a new ultra low leakage 10T sub threshold SRAM bitcell. ISOCC, Nov 2012, Jeju Island, South Korea. ⟨10.1109/ISOCC.2012.6406898⟩. ⟨hal-01865458⟩
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Thèse

2015

ref_biblio
Anis Feki. Solutions of subthreshold SRAM in ultra-wide-voltage range in advanced CMOS technologies for biomedical and wireless sensor applications. Electronics. INSA de Lyon, 2015. English. ⟨NNT : 2015ISAL0018⟩. ⟨tel-02003583⟩
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https://theses.hal.science/tel-02003583/file/these.pdf BibTex