Publications HAL de Besar,ASLLANI de la collection AMPERE

Article dans une revue

2023

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P. Vigneshwara Raja, Christophe Raynaud, Besar Asllani, Hervé Morel, Dominique Planson. Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes. Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩. ⟨hal-04199489⟩
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https://hal.science/hal-04199489/file/JMSME.pdf BibTex

2022

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Dominique Planson, Camille Sonneville, Pascal Bevilacqua, Luong Viêt V Phung, Besar Asllani, et al.. 4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method. Materials Science Forum, 2022, 1062, pp.341-345. ⟨10.4028/p-2ch22f⟩. ⟨hal-03689424⟩
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https://hal.science/hal-03689424/file/micro_obic.pdf BibTex

2020

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Camille Sonneville, Dominique Planson, Luong Viêt Phung, Pascal Bevilacqua, Besar Asllani. Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC). Materials Science Forum, 2020, 1004, pp.290. ⟨10.4028/www.scientific.net/MSF.1004.290⟩. ⟨hal-02925178⟩
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https://hal.science/hal-02925178/file/article_v7.pdf BibTex
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Besar Asllani, Pascal Bevilacqua, Hervé Morel, Dominique Planson, Luong Viet Phung, et al.. Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons. Materials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩. ⟨hal-02931290⟩
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https://hal.science/hal-02931290/file/ICSCRM2019_BJT_review.pdf BibTex

2019

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Besar Asllani, Alberto Castellazzi, Dominique Planson, Hervé Morel. Subthreshold Drain current hysteresis of planar SiC MOSFETs. Materials Science Forum, 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩. ⟨hal-02060341⟩
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https://hal.science/hal-02060341/file/978-3-0357-1332-9_290.pdf BibTex
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Dominique Planson, Besar Asllani, Luong-Viet Phung, Pascal Bevilacqua, Hassan Hamad, et al.. Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors. Materials Science in Semiconductor Processing, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩. ⟨hal-02053053⟩
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https://hal.science/hal-02053053/file/full_paper_BA_vff.pdf BibTex
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Besar Asllani, Dominique Planson, Pascal Bevilacqua, Jean-Baptiste Fonder, Beverley Choucoutou, et al.. Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes. Materials Science Forum, 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩. ⟨hal-02060334⟩
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https://hal.science/hal-02060334/file/978-3-0357-1332-9_1050.pdf BibTex
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Besar Asllani, Pascal Bevilacqua, Abderrahime Zaoui, Gregory Grosset, Dominique Planson, et al.. High-Voltage SiC-JFET Fabrication and Full Characterization. Materials Science Forum, 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩. ⟨hal-02060228⟩
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https://hal.science/hal-02060228/file/978-3-0357-1332-9_960.pdf BibTex
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Besar Asllani, Hervé Morel, Luong Viêt Phung, Dominique Planson. 10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization. Energies, 2019, ⟨10.3390/en12234566⟩. ⟨hal-02398585⟩
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https://hal.science/hal-02398585/file/2019-energies-PIN.pdf BibTex
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Oriol Aviño Salvado, Besar Asllani, Cyril Buttay, Christophe Raynaud, Hervé Morel. Extraction of the 4H-SiC/SiO₂ Barrier Height Over Temperature. IEEE Transactions on Electron Devices, 2019, 67 (1), pp.63 - 68. ⟨10.1109/TED.2019.2955181⟩. ⟨hal-02418097⟩
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https://hal.science/hal-02418097/file/Reviewed_paper_2.pdf BibTex

2018

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Dominique Planson, Besar Asllani, Hassan Hamad, Marie-Laure Locatelli, R Arvinte, et al.. Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode. Materials Science Forum, 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩. ⟨hal-01818806⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01818806/file/icscrm_planson_2017_final.pdf BibTex
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Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson. VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩. ⟨hal-01889461⟩
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https://hal.science/hal-01889461/file/Paper_esref2018_Besar_Revision_VF.pdf BibTex
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Besar Asllani, Jean Baptiste Fonder, Pascal Bevilacqua, Dominique Planson, Luong Viet Phung, et al.. Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes. Materials Science Forum, 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩. ⟨hal-01857352⟩
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https://hal.science/hal-01857352/file/BAsllani_ICSCRM_VF.pdf BibTex

2016

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Besar Asllani, Maxime Berthou, Dominique Tournier, Pierre Brosselard, Phillippe Godignon. Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range. Materials Science Forum, 2016, 858, pp.741 - 744. ⟨10.4028/www.scientific.net/MSF.858.741⟩. ⟨hal-01646323⟩
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https://hal.science/hal-01646323/file/978-3-0357-1042-7_741.pdf BibTex

2015

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Maxime Berthou, Besar Asllani, Pierre Brosselard, Philippe Godignon. Cryogenic to High Temperature Exploration of 4H-SiC W-SBD. Materials Science Forum, 2015, 821-823, pp.583-587. ⟨10.4028/www.scientific.net/MSF.821-823.583⟩. ⟨hal-01646326⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01646326/file/W-SBD_cryogenic_analysis_proc2%20%28R%C3%A9par%C3%A9%29.pdf BibTex

Communication dans un congrès

2023

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Cédric Mathieu de Vienne, Besar Asllani, Hugo Reynes, Martin Guillet, Amin Salim Obaid Al-Hinaai, et al.. Towards a Common Mode Current Free Packaging Solution for High Voltage Series Connected SiC MOSFET Switches. Power Electronics, Intelligent Motion, Renewable Energy and Energy Management ( PCIM ) Europe, May 2023, Nuremberg, Germany. ⟨hal-04147021⟩
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https://hal.science/hal-04147021/file/PCIM2023_series_connection_archive_Vfinale.pdf BibTex
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Amin Salim Obaid Al-Hinaai, Till Huesgen, Cyril Buttay, Eric Vagnon, Ildiko Ettinger, et al.. An Advanced Integrated Cooling Solution for High Voltage and Power Density Modules. Therminic 2023 - 29th International Workshop Thermal Investigations on ICs and Systems, Sep 2023, Budapest, Hungary. à paraître, ⟨10.1109/THERMINIC60375.2023.10325867⟩. ⟨hal-04240225⟩
Accès au texte intégral et bibtex
https://hal.science/hal-04240225/file/Therminic_2023_submitted.pdf BibTex

2022

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P Vigneshwara Raja, Christophe Raynaud, Besar Asllani, Herve Morel, Dominique Planson. Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes. International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India. ⟨hal-03990840⟩
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BibTex
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P Vigneshwara Raja, Besar Asllani, Christophe Raynaud, Hervé Morel, Luong Viet Phung, et al.. Trapping effects in High-Power 4H-Silicon Carbide (4H-SiC) Bipolar PiN Rectifiers. 6th IEEE International Conference on Emerging Electronics (ICEE 2022), IEEE, Dec 2022, Bangalore, India. ⟨hal-04011039⟩
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BibTex
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Arthur Boutry, Cyril Buttay, Besar Asllani, Bruno Lefebvre, Eric Vagnon, et al.. Experimental study of the reduction and removal of turn-on snubber for IGCT based MMC submodule using fast silicon diodes. Proceedings of the European Power Electronics conference (EPE ECCE 2022), Sep 2022, Hannovre, Germany. ⟨hal-03775977⟩
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https://hal.science/hal-03775977/file/2022125210.pdf BibTex

2020

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Besar Asllani, Hervé Morel, Pascal Bevilacqua, Dominique Planson. Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor. EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩. ⟨hal-02945919⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02945919/file/EPE20_SuperGrid_basllani_VFF-hm.pdf BibTex

2019

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Besar Asllani, Dominique Planson, Hervé Morel, T Lagier. Static characteristics of 5 kV SiC BJTs and Darlington’s. International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. ⟨hal-02428513⟩
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https://hal.science/hal-02428513/file/Mo-P-45.pdf BibTex
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Camille Sonneville, Dominique Planson, Luong Viêt Phung, Besar Asllani, Pascal Bevilacqua. Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor Devices. Workshop on Compound Semiconductor Devices and Integrated Circuits 2019 (WOCSDICE 2019), Jun 2019, Cabourg, France. ⟨hal-02164000⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02164000/file/Abstract_Ampere.pdf BibTex
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Besar Asllani, Alberto Castellazzi, Oriol Aviño Salvado, Asad Fayyaz, Hervé Morel, et al.. V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩. ⟨hal-02099781⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02099781/file/Vth-Hysteresis%20and%20Interface%20States%20Characterisation%20in%20SiC%20Power%20MOSFETs%20with%20Planar%20and%20Trench%20Gate.pdf BibTex
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Camille Sonneville, Dominique Planson, Luong Viêt Phung, Pascal Bevilacqua, Besar Asllani. Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC). International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. pp.Mo-P-23. ⟨hal-02428502⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02428502/file/Mo-P-23.pdf BibTex

2018

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Besar Asllani, A Castellazzi, Dominique Planson, Hervé Morel. Subthreshold Drain current hysteresis of planar SiC MOSFETs. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04. ⟨hal-02428531⟩
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https://hal.science/hal-02428531/file/TU.04a.04.pdf BibTex
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Dominique Planson, Luong-Viet Phung, Besar Asllani, Pascal Bevilacqua, Hassan Hamad, et al.. Experimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductors. e-MRS Fall Meeting, Sep 2018, Varsovie, Poland. ⟨hal-02116919⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02116919/file/cgri_71_hal.pdf BibTex
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Besar Asllani, Dominique Planson, Pascal Bevilacqua, J B Fonder, B Choucoutou, et al.. Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2. ⟨hal-01985994⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01985994/file/ecscrm_2018_Surge_ba_version_finale.pdf BibTex
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Besar Asllani, Hervé Morel, Dominique Planson, Asad Fayyaz, Alberto Castellazzi. SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation. ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩. ⟨hal-01984359⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01984359/file/asllani_SiCMOSFET_SC.pdf.pdf BibTex
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B Choucoutou, Besar Asllani, L V Phung, J B Fonder, Dominnique Tournier, et al.. Conception and high temperature characterization of 10 kV 50 A 4H-SiC PiN diodes. European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom. ⟨hal-02004841⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02004841/file/cgri70.pdf BibTex
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Besar Asllani, Pascal Bevilacqua, A. Zaoui, G Grosset, Dominique Planson, et al.. High-Voltage SiC-JFET Fabrication and Full Characterization. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5. ⟨hal-02428523⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02428523/file/TU.P.BP5.pdf BibTex

2017

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Besar Asllani, J B Fonder, Pascal Bevilacqua, Dominique Planson, L. Phung, et al.. Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States. ⟨hal-02132576⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02132576/file/final_ICSCRM_v5.pdf BibTex
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Dominique Planson, Besar Asllani, Hassan Hamad, Marie-Laure Locatelli, Lumei Wei, et al.. Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4. ⟨hal-02138767⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02138767/file/cgri62.pdf BibTex

2014

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Besar Asllani, Shiqin Niu, Patrick Denis, Maxime Berthou, Dominique Tournier, et al.. Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de silicium. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065193⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01065193/file/Article_SGE2014_Ampere_Asllani.pdf https://hal.science/hal-01065193/file/SGE2014_AMPERE_version_finale.pdf BibTex

Thèse

2016

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Besar Asllani. Caractérisation et modélisation de diodes Schottky et JBS SiC-4H pour des applications haute tension. Electronique. Université de Lyon, 2016. Français. ⟨NNT : 2016LYSEI147⟩. ⟨tel-01673489v3⟩
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https://theses.hal.science/tel-01673489/file/thesis_main.pdf BibTex