Publications HAL de Hassan,HAMAD de la collection AMPERE

Article dans une revue

2023

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Hassan Hamad, Dominique Tournier, Jean-Michel Reynes, Olivier Perrotin, David Trémouilles, et al.. First results on 1.2 kV SiC MOSFET body diode robustness tests. Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩. ⟨hal-04282544⟩
Accès au texte intégral et bibtex
https://hal.science/hal-04282544/file/MICREL_body%20diode%20robustness%20final.pdf BibTex
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Tamiris Grossl Bade, Hassan Hamad, Adrien Lambert, Hervé Morel, Dominique Planson. Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs. Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩. ⟨hal-04121028⟩
Accès au texte intégral et bibtex
https://hal.science/hal-04121028/file/electronics-12-02529-vfinal.pdf BibTex

2019

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Dominique Planson, Besar Asllani, Luong-Viet Phung, Pascal Bevilacqua, Hassan Hamad, et al.. Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors. Materials Science in Semiconductor Processing, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩. ⟨hal-02053053⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02053053/file/full_paper_BA_vff.pdf BibTex

2018

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Dominique Planson, Besar Asllani, Hassan Hamad, Marie-Laure Locatelli, R Arvinte, et al.. Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode. Materials Science Forum, 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩. ⟨hal-01818806⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01818806/file/icscrm_planson_2017_final.pdf BibTex

2017

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Hassan Hamad, Dominique Planson, Christophe Raynaud, Pascal Bevilacqua. OBIC Technique Applied to Wide Bandgap Semiconductors from 100 K up to 450 K. Semiconductor Science and Technology, 2017, 32 (5), ⟨10.1088/1361-6641/aa641d/meta⟩. ⟨hal-01865068⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01865068/file/rev128_hal.pdf BibTex

2016

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Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Bertrand Vergne, et al.. Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption. Materials Science Forum, 2016, 858, pp.245 - 248. ⟨10.4028/www.scientific.net/MSF.858.245⟩. ⟨hal-01388035⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01388035/file/rev123_hal.pdf BibTex

2015

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Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. 2D Electric field imagery in 4H-SiC power diodes using OBIC technique. European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩. ⟨hal-01387989⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01387989/file/rev121_hal.pdf BibTex
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Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Dominique Planson. Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current. Materials Science Forum, 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩. ⟨hal-01387987⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01387987/file/ECSCRM_HAMAD_Reviewed.pdf BibTex

2014

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Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Dominique Tournier, Bertrand Vergne, et al.. Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes. Applied Physics Letters, 2014, 104 (8), ⟨10.1063/1.4866581⟩. ⟨hal-01387924⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01387924/file/rev106_hal.pdf BibTex

Communication dans un congrès

2023

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Hassan Hamad, Dominique Tournier, Jean-Michel Reynes, Olivier Perrotin, Régis Meuret, et al.. First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests. 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨hal-04240602⟩
Accès au texte intégral et bibtex
https://hal.science/hal-04240602/file/ESREF_body%20diode%20robustness.pdf BibTex

2018

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Dominique Planson, Luong-Viet Phung, Besar Asllani, Pascal Bevilacqua, Hassan Hamad, et al.. Experimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductors. e-MRS Fall Meeting, Sep 2018, Varsovie, Poland. ⟨hal-02116919⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02116919/file/cgri_71_hal.pdf BibTex

2017

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Dominique Planson, Besar Asllani, Hassan Hamad, Marie-Laure Locatelli, Lumei Wei, et al.. Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4. ⟨hal-02138767⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02138767/file/cgri62.pdf BibTex

2016

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Dominique Planson, Hassan Hamad. OBIC Technique Applied to Wide Bandgap Semiconductors. 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC ‐ Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2016, Aveiro, Portugal. ⟨hal-01388036⟩
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BibTex

2015

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Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Dominique Planson. Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method. CAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩. ⟨hal-01388024⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01388024/file/CAS-2015-HAMAD_VF1.pdf BibTex
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Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, S Sharnholz, Bertrand Vergne, et al.. Determination of 4H-SiC ionization rates using OBIC based on two-photon absorption. International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy. ⟨hal-02138523⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02138523/file/cgri60c.pdf BibTex

2014

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Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065307⟩
Accès au texte intégral et bibtex
https://hal.science/hal-01065307/file/SGE2014_HAMAD_VF.pdf https://hal.science/hal-01065307/file/SGE_2014_Hamad.pdf BibTex
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Hassan Hamad, Pascal Bevilacqua, Christophe Raynaud, Dominique Planson. Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes. 2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩. ⟨hal-01388043⟩
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Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Dominique Planson. Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current. ECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08. ⟨hal-02133683⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02133683/file/ECSCRM_Abstract_v4.pdf BibTex

Thèse

2015

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Hassan Hamad. Détermination des coefficients d'ionisation de matériaux à grand gap par génération multi-photonique. Electronique. INSA de Lyon, 2015. Français. ⟨NNT : 2015ISAL0017⟩. ⟨tel-01309165⟩
Accès au texte intégral et bibtex
https://theses.hal.science/tel-01309165/file/these.pdf BibTex