Publications HAL de Jerome, Saint-Martin ;Marco, Pala ; Philippe, Dollfus
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Criteria : Author : "Jerome, Saint-Martin ;Marco, Pala ; Philippe, Dollfus"
Number of occurrences founded : 87.

titre
1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices
auteur
Markus Muller, Philippe Dollfus, Michael Schroter
article
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (3), pp.1221-1227. ⟨10.1109/TED.2021.3051552⟩
titre
Indirect to direct band gap crossover in two-dimensional WS 2(1-x) Se 2x alloys
auteur
Cyrine Ernandes, Lama Khalil, Hela Almabrouk, Debora Pierucci, Biyuan Zheng, José Avila, Pavel Dudin, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Thibault Brulé, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi
article
npj 2D Materials and Applications, Nature, 2021
titre
Electronic band gap of van der Waals α-As2Te3 crystals
auteur
Lama Khalil, Jean-Christophe Girard, Debora Pierucci, Federico Bisti, Julien Chaste, Fabrice Oehler, Charlie Gréboval, Ulrich Nguétchuissi Noumbé, Jean-Francois Dayen, Demetrio Logoteta, Gilles Patriarche, Julien Rault, Marco Pala, Emmanuel Lhuillier, Abdelkarim Ouerghi
article
Applied Physics Letters, American Institute of Physics, 2021, 119 (4), pp.043103. ⟨10.1063/5.0058291⟩
titre
Spectral simulation of heat transfer across polytype interfaces
auteur
N. Izitounene, N. D. Le, B. Davier, P. Dollfus, Lorenzo Paulatto, Jérôme Saint-Martin
article
Fall Meeting of the European Materials Research Society (E-MRS) 2021, Sep 2021, VIRTUAL Conference, Poland
titre
Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics
auteur
Thibauld Cazimajou, Marco Pala, Jérôme Saint-Martin, Denis Rideau, Philippe Dollfus
article
21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea
titre
Study of the modal contributions to the heat flux to characterize the phonon transport regime in Si/Ge heterojunctions
auteur
Ngoc Duc Le, Brice Davier, Philippe Dollfus, Jérôme Saint-Martin
article
21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea
titre
Electron transport properties of graphene nanoribbons with Gaussian deformation
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
article
Physical Review B, American Physical Society, 2020, 102 (7), ⟨10.1103/PhysRevB.102.075425⟩
titre
A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect
auteur
Demetrio Logoteta, Marco Pala, Jean Choukroun, Philippe Dollfus, Giuseppe Iannaccone
article
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2019, 40 (9), pp.1550-1553. ⟨10.1109/LED.2019.2928131⟩
titre
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices
auteur
Marco Pala, David Esseni
article
Journal of Applied Physics, American Institute of Physics, 2019, 126 (5), pp.055703. ⟨10.1063/1.5109187⟩
titre
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions
auteur
Jean Choukroun, Marco Pala, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus
article
Nanotechnology, Institute of Physics, 2019, 30 (2), pp.025201. ⟨10.1088/1361-6528/aae7df⟩
titre
Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors
auteur
Marco Pala, D. Esseni
article
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870406⟩
titre
Nanoscale heat transfer via Ab-Initio Monte Carlo simulation
auteur
Brice Davier, Jérôme Larroque, Philippe Dollfus, Laurent Chaput, Sebastian Volz, Jérôme Saint-Martin
article
20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States
titre
On the origins of transport inefficiencies in mesoscopic networks
auteur
Sébastien Toussaint, Frederico Martins, Sebastien Faniel, Marco Pala, Ludovic Desplanque, Xavier Wallart, Hermann Sellier, Serge Huant, Vincent Bayot, Benoit Hackens
article
Scientific Reports, Nature Publishing Group, 2018, 8, pp.3017. ⟨10.1038/s41598-018-21250-y⟩
titre
Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation
auteur
Brice Davier, Jérôme Larroque, Philippe Dollfus, Laurent Chaput, Sebastian Volz, David Lacroix, Jérôme Saint-Martin
article
Journal of Physics: Condensed Matter, IOP Publishing, In press, 30 (49), pp.495902. ⟨10.1088/1361-648X/aaea4f⟩
titre
Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study
auteur
Corentin Grillet, Alessandro Cresti, Marco Pala
article
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (7), pp.3038-3044. ⟨10.1109/TED.2018.2834307⟩
titre
Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors
auteur
Jiang Cao, Demetrio Logoteta, Marco Pala, Alessandro Cresti
article
Journal of Physics D: Applied Physics, IOP Publishing, 2018, 51 (5), pp.055102. ⟨10.1088/1361-6463/aaa1b6⟩
titre
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs
auteur
Demetrio Logoteta, Nicolas Cavassilas, Alessandro Cresti, Marco Pala, Marc Bescond
article
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (2), pp.424 - 430. ⟨10.1109/TED.2017.2785123⟩
titre
Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures
auteur
Jiang Cao, Jejune Park, François Triozon, Marco Pala, Alessandro Cresti
article
Composants nanoélectroniques, 2018, 18 (1), ⟨10.21494/ISTE.OP.2018.0222⟩
titre
Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models
auteur
Jérôme Larroque, Philippe Dollfus, Jérôme Saint-Martin
article
Journal of Applied Physics, American Institute of Physics, 2018, 123 (2), ⟨10.1063/1.5007034⟩
titre
Ab initio based calculations of the thermal conductivity at the micron scale
auteur
Laurent Chaput, Jérôme Larroque, Philippe Dollfus, Jérôme Saint-Martin, David Lacroix
article
Applied Physics Letters, American Institute of Physics, 2018, 112 (3), pp.033104. ⟨10.1063/1.5010959⟩
titre
High thermoelectric performance of graphite nanofibers
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
article
Nanoscale, Royal Society of Chemistry, 2018, 10 (8), pp.3784 - 3791. ⟨10.1039/C7NR07817J⟩
titre
High thermoelectric and electronic performance in graphene nanoribbons by isotope and vacancy engineering
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
article
Materials Today: Proceedings, Elsevier, 2018, 4 (4, Part 1), pp.10393-10400. ⟨10.1016/j.matpr.2017.12.287⟩
titre
Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures
auteur
B. Davier, J. Larroque, Philippe Dollfus, Laurent Chaput, S. Volz, David Lacroix, Jérôme Saint-Martin
article
Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
titre
Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devices
auteur
Marco Pala, Oves Badami, David Esseni
article
2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.33.1.1-33.1.4, ⟨10.1109/IEDM.2018.8614613⟩
titre
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures
auteur
Denis Rideau, Gabriel Mugny, Marco Pala, David Esseni
article
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2018, Austin, France. pp.224-227, ⟨10.1109/SISPAD.2018.8551706⟩
titre
High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors
auteur
Marco G. Pala, Jean Choukroun, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus
article
48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩
titre
Thermoelectric properties of Quantum Dot-based devices
auteur
Vincent Talbo, Jérôme Saint-Martin, Philippe Dollfus
article
IEEE NANO 2018, Jul 2018, Cork, Ireland
titre
Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach
auteur
B. Davier, J. Larroque, P. Dollfus, Jérôme Saint-Martin
article
High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
titre
Enhanced Seebeck effect in graphene devices by strain and doping engineering
auteur
Mai-Chung Nguyen, Viet-Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, Philippe Dollfus
article
High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
titre
Comparison of Si/Ge interface thermal transmission modellings: Full-band mismatch models, lattice dynamics and Molecular Dynamics.
auteur
B. Davier, A. Alkurdi, J. Larroque, S. Volz, S. Merabia, Jérôme Saint-Martin
article
Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
titre
Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors
auteur
Vincent Talbo, Jérôme Saint-Martin, Sylvie Galdin-Retailleau, Philippe Dollfus
article
Scientific Reports, Nature Publishing Group, 2017, 7 (1), ⟨10.1038/s41598-017-14009-4⟩
titre
Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
article
Scientific Reports, Nature Publishing Group, 2017, 7 (1), ⟨10.1038/s41598-017-02230-0⟩
titre
Gold Nanoparticles on Functionalized Silicon Substrate under Coulomb Blockade Regime: An Experimental and Theoretical Investigation
auteur
Olivier Pluchery, Louis Caillard, Philippe Dollfus, Yves Chabal
article
Journal of Physical Chemistry B, American Chemical Society, 2017, 122 (2), pp.897 - 903. ⟨10.1021/acs.jpcb.7b06979⟩
titre
Third nearest neighbor parameterized tight binding model for graphene nano-ribbons
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
article
AIP Advances, American Institute of Physics- AIP Publishing LLC, 2017, 7 (7), ⟨10.1063/1.4994771⟩
titre
Full-Band modelling of phonons in polytype Ge and Si
auteur
J. Larroque, P. Dollfus, Jérôme Saint-Martin
article
20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007
titre
Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs
auteur
Demetrio Logoteta, Nicolas Cavassilas, Marco Pala, Alessandro Cresti, Marc Bescond
article
International Workshop on Computational Nanotechnology (IWCN 2017), Jun 2017, Windermere, United Kingdom
titre
Van der Waals tunnel field effect transistors with lateral momentum mismatch
auteur
Jiang Cao, Marco Pala, Alessandro Cresti
article
2D@Grenoble, Fondation Nanosciences, Apr 2017, Grenoble, France
titre
Van der Waals tunnel field effect transistors with misoriented layers
auteur
Alessandro Cresti, Jiang Cao, Marco Pala
article
Graphene 2017, Mar 2017, Barcelona, Spain
titre
Simulation of van der Waals vertical tunnel field-effect transistors
auteur
Jiang Cao, Marco Pala, Alessandro Cresti
article
2017, pp.18
titre
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
auteur
Marco Pala, Corentin Grillet, Jiang Cao, Demetrio Logoteta, Alessandro Cresti, David Esseni
article
Journal of Computational Electronics, Springer Verlag, 2016, 15 (4), pp.1240-1247. ⟨10.1007/s10825-016-0900-8⟩
titre
Special Issue on Inelastic Scattering Introduction
auteur
Marc Bescond, Philippe Dollfus
article
Journal of Computational Electronics, Springer Verlag, 2016, 15 (4, SI), pp.1119-1122. ⟨10.1007/s10825-016-0917-z⟩
titre
Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons
auteur
T. Nghiem, Jérôme Saint-Martin, P. Dollfus
article
Journal of Computational Electronics, Springer Verlag, 2016, 15 (1), pp.3 - 15. ⟨10.1007/s10825-015-0773-2⟩
titre
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides
auteur
Jiang Cao, Alessandro Cresti, David Esseni, Marco Pala
article
Solid-State Electronics, Elsevier, 2016, 116, pp.1-7. ⟨10.1016/j.sse.2015.11.003⟩
titre
High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
article
Nanotechnology, Institute of Physics, 2015, 26 (49), ⟨10.1088/0957-4484/26/49/495202⟩
titre
Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
article
Semiconductor Science and Technology, IOP Publishing, 2015, 30 (10), ⟨10.1088/0268-1242/30/10/105002⟩
titre
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs
auteur
David Esseni, Marco Pala, Tommaso Rollo
article
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (9), pp.3084-3091. ⟨10.1109/TED.2015.2458171⟩
titre
Enhanced Seebeck effect in graphene devices by strain and doping engineering
auteur
M. Chung Nguyen, V. Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, P. Dollfus
article
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2015, 73, pp.207 - 212. ⟨10.1016/j.physe.2015.05.020⟩
titre
Exploiting Hetero-Junctions to Improve the Performance of III–V Nanowire Tunnel-FETs
auteur
Marco Pala, Sylvan Brocard
article
IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2015, 3 (3), pp.115-121. ⟨10.1109/JEDS.2015.2395719⟩
titre
Thermoelectric effects in graphene nanostructures
auteur
Philippe Dollfus, Viet Hung Nguyen, Jérôme Saint-Martin
article
Journal of Physics: Condensed Matter, IOP Publishing, 2015, 27 (13), ⟨10.1088/0953-8984/27/13/133204⟩
titre
Strain-induced conduction gap in vertical devices made of misoriented graphene layers
auteur
V Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, P. Dollfus
article
Nanotechnology, Institute of Physics, 2015, 26 (11), ⟨10.1088/0957-4484/26/11/115201⟩
titre
Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy
auteur
Peng Liu, Frederico Martins, Benoit Hackens, Ludovic Desplanque, Xavier Wallart, Marco Pala, Serge Huant, Vincent Bayot, Hermann Sellier
article
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2015, 91 (7), pp.075313. ⟨10.1103/PhysRevB.91.075313⟩
titre
Proposal for a graphene-based all-spin logic gate
auteur
Li Su, Weisheng Zhao, Yue Zhang, Damien Querlioz, Youguang Zhang, Jacques-Olivier Klein, Philippe Dollfus, Arnaud Bournel
article
Applied Physics Letters, American Institute of Physics, 2015
titre
A computational study of van der Waals tunnel transistors: Fundamental aspects and design challenges
auteur
Jiang Cao, Demetrio Logoteta, Sibel Ozkaya, Blanca Biel, Alessandro Cresti, Marco Pala, David Esseni
article
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.12.5.1 - 12.5.4, ⟨10.1109/IEDM.2015.7409684⟩
titre
Quantum simulation of tunnel field-effect transistors based on a vertical heterojunction of 2D transition metal dichalcogenides
auteur
Jiang Cao, Marco Pala, Alessandro Cresti, David Esseni
article
Annual meeting of the GDRi Graphene and Nanotubes, Nov 2015, Aussois, France
titre
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier
auteur
Luca Lucci, Jean-Charles Barbé, Marco Pala
article
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.128-131, ⟨10.1109/SISPAD.2015.7292275⟩
titre
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals
auteur
Jiang Cao, Marco Pala, Alessandro Cresti, David Esseni
article
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.245-248, ⟨10.1109/ULIS.2015.7063819⟩
titre
Enhanced thermoelectric figure of merit in vertical graphene junctions
auteur
Viet-Hung Nguyen, Mai Chung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, Philippe Dollfus
article
Applied Physics Letters, American Institute of Physics, 2014, 105 (13), ⟨10.1063/1.4896915⟩
titre
New insights into self-heating in double-gate transistors by solving Boltzmann transport equations
auteur
T. Thu Trang Nghiêm, Jérôme Saint-Martin, P. Dollfus
article
Journal of Applied Physics, American Institute of Physics, 2014, 116 (7), ⟨10.1063/1.4893646⟩
titre
Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
article
Applied Physics Letters, American Institute of Physics, 2014, 105 (7), ⟨10.1063/1.4893697⟩
titre
A Klein-tunneling transistor with ballistic graphene
auteur
Quentin Wilmart, Salim Berrada, David Torrin, V Hung Nguyen, Gwendal Fève, Jean-Marc Berroir, Philippe Dollfus, Bernard Plaçais
article
2D Materials, IOP Publishing, 2014, 1 (1), pp.011006. ⟨10.1088/2053-1583/1/1/011006⟩
titre
On the non-linear effects in graphene devices
auteur
Viet Hung Nguyen, Alfonso Alarcón, Salim Berrada, Van Nam Do, Jérôme Saint-Martin, Damien Querlioz, Arnaud Bournel, Philippe Dollfus
article
Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (9), pp.094007
titre
Quantum simulation of a 2-D heterojunction interlayer tunneling field effect transistor
auteur
Jiang Cao, Marco Pala, Alessandro Cresti, David Esseni
article
2nd Workshop Graphene in Grenoble, Fondation Nanosciences, Nov 2014, Grenoble, France
titre
(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects
auteur
David Esseni, Marco Pala, Revelant A., P. Palestri, M. Li, G. Snider, D. Jena, H.G. Xing
article
226th ECS and SMEQ Joint International Meeting: SiGe,Ge and Related Compounds: Materials, Processing and Devices 6, S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, Oct 2014, Cacun, Mexico
titre
Quantum simulation of self-heating effects in rough Si nanowire FETs
auteur
Marco Pala, Alessandro Cresti
article
17th International Workshop on Computational Electronics (IWCE 2014), Jun 2014, Paris, France. pp.1-3, ⟨10.1109/IWCE.2014.6865827⟩
titre
(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs
auteur
Marco Pala, David Esseni
article
225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing, D. Misra, Y. Obeng, T. Chikyow, H. Iwai, Z. Chen and D. Bauza, May 2014, Orlando, United States
titre
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy
auteur
Gustavo Ardila, Anne Kaminski-Cachopo, Marco Pala, Alessandro Cresti, Laurent Montes, Vincent Consonni, Ronan Hinchet, Jerome Michallon, Mehdi Daanoune, Mauro Zanuccoli, Claudio Fiegna, Mireille Mouis
article
A. Nazarov; F. Balestra; V. Kilchytska; D. Flandre. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting, Springer International Publishing, pp.223-240, 2014, 978-3-319-08803-7. ⟨10.1007/978-3-319-08804-4_11⟩
titre
Nanowire Devices
auteur
Gérard Ghibaudo, Sylvain Barraud, Mikaël Cassé, Xin Peng Wang, Guo Qiang Lo, Dim-Lee Kwong, Marco Pala, Zheng Fang
article
Ed. by F. Balestra. Beyond‐CMOS Nanodevices 2, Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7. ⟨10.1002/9781118985137.ch2⟩
titre
Graphene nanomesh transistor with high on/off ratio and good saturation behavior
auteur
Salim Berrada, Viet Hung Nguyen, Damien Querlioz, Jérôme Saint-Martin, Alfonso Alarcón, Christophe Chassat, Arnaud Bournel, Philippe Dollfus
article
Applied Physics Letters, American Institute of Physics, 2013, 103 (18), pp.183509
titre
Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications
auteur
Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Nicolas Wichmann, Sylvain Bollaert, François Danneville, Philippe Dollfus
article
Solid-State Electronics, Elsevier, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩
titre
Decoherence effects in the Wigner function formalism
auteur
Philipp Schwaha, Damien Querlioz, Philipp Dollfus, Jérôme Saint-Martin, Mihail Nedjalkov, Siegfried Selberherr
article
Journal of Computational Electronics, Springer Verlag, 2013, 12 (3), pp.388-396
titre
Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance
auteur
Viet Hung Nguyen, Jérôme Saint-Martin, Damien Querlioz, Fulvio Mazzamuto, Arnaud Bournel, Yann-Michel Niquet, Philippe Dollfus
article
Journal of Computational Electronics, Springer Verlag, 2013, 12 (2), pp.85-93
titre
Immunity to Device Variations in a Spiking Neural Network With Memristive Nanodevices
auteur
Damien Querlioz, Olivier Bichler, Philippe Dollfus, Christian Gamrat
article
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2013, 12 (3), pp.288 - 295. ⟨10.1109/TNANO.2013.2250995⟩
titre
Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors
auteur
Alfonso Alarcón, Viet-Hung Nguyen, Salim Berrada, Damien Querlioz, Jérôme Saint-Martin, Arnaud Bournel, Philippe Dollfus
article
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (3), pp.985-991
titre
Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor
auteur
Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Philippe Dollfus, Jiongjong Mo, Nicolas Wichmann, Ludovic Desplanque, Xavier Wallart, François Danneville, Sylvain Bollaert
article
Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2013, 13 (2), pp.771-775
titre
Graphene nanomesh transistor with high on/off ratio and good saturation behavior
auteur
Salim Berrada, Viet Hung Nguyen, Damien Querlioz, Jérôme Saint-Martin, Alfonso Alarcón, Christophe Chassat, Arnaud Bournel, Philippe Dollfus
article
Applied Physics Letters, American Institute of Physics, 2013, 103 (18), ⟨10.1063/1.4828496⟩
titre
Multiscale simulation of carbon nanotube transistors
auteur
Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Sylvie Retailleau, Huu Nha Nguyen, Damien Querlioz, Arnaud Bournel, Philippe Dollfus, François Triozon, Yann-Michel Niquet, Stephan Roche
article
Solid-State Electronics, Elsevier, 2013, 89, pp.26-67. ⟨10.1016/j.sse.2013.06.013⟩
titre
A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks
auteur
Marco Pala, Hermann Sellier, Benoit Hackens, Frederico Martins, Vincent Bayot, Serge Huant
article
Nanoscale Research Letters, SpringerOpen, 2012, 7, pp.472. ⟨10.1186/1556-276X-7-472⟩
titre
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs
auteur
Alessandro Cresti, Marco Pala, Stefano Poli, Mireille Mouis, Gérard Ghibaudo
article
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2011, 58 (8), pp.2274-2281. ⟨10.1109/TED.2011.2147318⟩
titre
Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
auteur
F. Mazzamuto, V. Hung Nguyen, Y. Apertet, C. Caër, C. Chassat, Jérôme Saint-Martin, P. Dollfus
article
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 83 (23), ⟨10.1103/PhysRevB.83.235426⟩
titre
Learning with memristive devices: How should we model their behavior?
auteur
Damien Querlioz, Philippe Dollfus, Olivier Bichler, Christian Gamrat
article
2011 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jun 2011, San Diego, United States. ⟨10.1109/NANOARCH.2011.5941497⟩
titre
Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology
auteur
Vincent Barral, Thierry Poiroux, Jérôme Saint-Martin, Daniela Munteanu, Jean-Luc Autran, Simon Deleonibus
article
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2009, 56 (3), pp.408-419. ⟨10.1109/TED.2008.2011681⟩
titre
Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study
auteur
F. Mazzamuto, Jérôme Saint-Martin, A. Bournel, P. Dollfus, Alexandre Archambault, François Marquier, Jean-Jacques Greffet
article
Journal of Physics: Conference Series, IOP Publishing, 2009, 193 (1), pp.012015
titre
On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation
auteur
D. Querlioz, Jérôme Saint-Martin, K. Huet, A. Bournel, V. Aubry-Fortuna, C. Chassat, S. Galdin-Retailleau, P. Dollfus
article
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2007, 54 (9), pp.2232 - 2242. ⟨10.1109/TED.2007.902713⟩
titre
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas
auteur
Jérôme Saint-Martin, A. Bournel, F Monsef, C. Chassat, P. Dollfus
article
Semiconductor Science and Technology, IOP Publishing, 2006, 21 (4), pp.L29 - L31. ⟨10.1088/0268-1242/21/4/L01⟩
titre
Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs
auteur
Jérôme Saint-Martin, Damien Querlioz, Arnaud Bournel, Philippe Dollfus
article
2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩
titre
ETUDE PAR SIMULATION MONTE CARLO D'ARCHITECTURES DE MOSFET ULTRACOURTS A GRILLE MULTIPLE SUR SOI
auteur
Jérôme Saint-Martin
article
Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2005. Français
titre
On the Ballistic Transport in Nanometer-Scaled DG MOSFETs
auteur
Jérôme Saint-Martin, A. Bournel, P. Dollfus
article
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2004, 51 (7), pp.1148 - 1155. ⟨10.1109/TED.2004.829904⟩