Publications HAL de Jerome, Saint-Martin ;Marco, Pala ; Philippe, Dollfus
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Criteria : Author : "Jerome, Saint-Martin ;Marco, Pala ; Philippe, Dollfus"
Number of occurrences founded : 133.

titre
Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride
auteur
Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer, Julien Chaste, César González, Yannick J. Dappe, François Bertran, Patrick Le Fèvre, Marco Pala, Fabrice Oehler, Jean-Christophe Girard, Abdelkarim Ouerghi
article
Physical Review Research, 2023, 5 (3), pp.033152. ⟨10.1103/PhysRevResearch.5.033152⟩
titre
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3
auteur
Geoffroy Kremer, Aymen Mahmoudi, A. M'Foukh, Meryem Bouaziz, Mehrdad Rahimi, Maria Luisa Della Rocca, Patrick Le Fèvre, Jean-François Dayen, Franco̧is Bertran, Sylvia Matzen, Marco Pala, Julien Chaste, Fabrice Oehler, Abdelkarim Ouerghi
article
ACS Nano, 2023, ⟨10.1021/acsnano.3c04186⟩
titre
Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor deposition
auteur
Aymen Mahmoudi, Meryem Bouaziz, Anis Chiout, Gaia Di Berardino, Nathan Ullberg, Geoffroy Kremer, Pavel Dudin, José Avila, Mathieu Silly, Vincent Derycke, Davide Romanin, Marco Pala, Iann Gerber, Julien Chaste, Fabrice Oehler, Abdelkarim Ouerghi
article
Physical Review B, 2023, 108 (4), pp.045417. ⟨10.1103/PhysRevB.108.045417⟩
titre
Direct observation of highly anisotropic electronic and optical nature in indium telluride
auteur
Geoffroy Kremer, Aymen Mahmoudi, Meryem Bouaziz, Cléophanie Brochard-Richard, Lama Khalil, Debora Pierucci, François Bertran, Patrick Le Fèvre, Mathieu G Silly, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Abdelkarim Ouerghi
article
Physical Review Materials, 2023, 7 (7), pp.074601. ⟨10.1103/physrevmaterials.7.074601⟩
titre
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off
auteur
Daniel Lizzit, Pedram Khakbaz, Francesco Driussi, Marco Pala, David Esseni
article
ACS Applied Nano Materials, 2023, 6 (7), pp.5737-5746. ⟨10.1021/acsanm.3c00166⟩
titre
Thermal conductance of twisted-layer graphite nanofibers
auteur
Van-Truong Tran, Thanh-Tra Vu, Jérôme Saint-Martin, Marco Pala, Philippe Dollfus
article
Carbon, 2023, 204, pp.601-611. ⟨10.1016/j.carbon.2022.12.059⟩
titre
Unidirectional Rashba Spin Splitting in Single Layer WS2(1-x)Se2x alloy
auteur
Jihene Zribi, Debora Pierucci, Federico Bisti, Biyuan Zheng, José Avila, Lama Khalil, Cyrine Ernandes, Julien Chaste, Fabrice Oehler, Marco Pala, Thomas Maroutian, Ilka Hermes, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi
article
Nanotechnology, 2023, 34 (7), pp.075705. ⟨10.1088/1361-6528/aca0f6⟩
titre
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure
auteur
Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis, Geoffroy Kremer, Julien Chaste, Davide Romanin, Marco Pala, François Bertran, Patrick Le Fèvre, Iann C Gerber, Gilles Patriarche, Fabrice Oehler, Xavier Wallart, Abdelkarim Ouerghi
article
ACS Nano, 2023, 17, pp.21307 - 21316. ⟨10.1021/acsnano.3c05818⟩
titre
Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer
auteur
Lama Khalil, Debora Pierucci, Emilio Velez-Fort, José Avila, Céline Vergnaud, Pavel Dudin, Fabrice Oehler, Julien Chaste, Matthieu Jamet, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi
article
Nanotechnology, 2023, 34 (4), pp.045702. ⟨10.1088/1361-6528/ac9abe⟩
titre
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials
auteur
Adel Mfoukh, Jérôme Saint-Martin, Philippe Dollfus, Marco Pala
article
Journal of Computational Electronics, 2023, 22, pp.1257-1263. ⟨10.1007/s10825-023-02080-2⟩
titre
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination
auteur
Alessandro Pilotto, Adel M’foukh, Philippe Dollfus, Jérôme Saint-Martin, Marco Pala
article
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.301-304, ⟨10.23919/SISPAD57422.2023.10319610⟩
titre
Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials
auteur
Junbum Park, Marco Pala, Jérôme Saint-Matin
article
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.21-24, ⟨10.23919/SISPAD57422.2023.10319605⟩
titre
Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations
auteur
Rémi Helleboid, Jérôme Saint-Martin, Marco Pala, Philippe Dollfus, Gabriel Mugny, Isobel Nicholson, Denis Rideau
article
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.369-372, ⟨10.23919/SISPAD57422.2023.10319557⟩
titre
Tunnel Field‐Effect Transistors Based on III–V Semiconductors
auteur
Marco Pala
article
Beyond‐CMOS: State of the Art and Trends, 1, Wiley, 2023, ⟨10.1002/9781394228713.ch1⟩
titre
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes
auteur
A. Pilotto, J. Saint-Martin, Marco G. Pala, Philippe Dollfus
article
Solid-State Electronics, 2022, 198, pp.108469. ⟨10.1016/j.sse.2022.108469⟩
titre
α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene
auteur
Lama Khalil, Pietro Maria Forcella, Geoffroy Kremer, Federico Bisti, Julien Chaste, Jean-Christophe Girard, Fabrice Oehler, Marco Pala, Jean-Francois Dayen, Demetrio Logoteta, Mark Goerbig, François Bertran, Patrick Le Fèvre, Emmanuel Lhuillier, Julien E. Rault, Debora Pierucci, Gianni Profeta, Abdelkarim Ouerghi
article
Physical Review B, 2022, 106 (12), pp.125152. ⟨10.1103/physrevb.106.125152⟩
titre
Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation
auteur
N. Le, Brice Davier, N. Izitounene, Philippe Dollfus, J. Saint-Martin
article
Journal of Computational Electronics, 2022, 21 (4), pp.744-755. ⟨10.1007/s10825-022-01885-x⟩
titre
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation
auteur
Philippe Dollfus, Jérôme Saint-Martin, T. Cazimajou, R. Helleboid, A. Pilotto, D. Rideau, A. Bournel, Marco G. Pala
article
Solid-State Electronics, 2022, 194, pp.108361. ⟨10.1016/j.sse.2022.108361⟩
titre
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines
auteur
Rémi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Jérôme Saint-Martin, Marco G. Pala, Philippe Dollfus
article
Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩
titre
Spectral Simulation of Heat Transfer Across Polytype Interfaces
auteur
Nadjib Izitounene, Ngoc Duc Le, Brice Davier, Philippe Dollfus, Lorenzo Paulatto, Jérome Saint-Martin
article
Crystal Research and Technology, 2022, 57 (9), pp.2200017. ⟨10.1002/crat.202200017⟩
titre
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy
auteur
Debora Pierucci, Aymen Mahmoudi, Mathieu Silly, Federico Bisti, Fabrice Oehler, Gilles Patriarche, Frédéric Bonell, Alain Marty, Céline Vergnaud, Matthieu Jamet, Hervé Boukari, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi
article
Nanoscale, 2022, 14 (15), pp.5859-5868. ⟨10.1039/D2NR00458E⟩
titre
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices
auteur
Remi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Marie Basset, Antonin Zimmer, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre, Christel Buj, Guillaume Marchand, Jérôme Saint-Martin, Marco G. Pala, Philippe Dollfus
article
IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩
titre
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes
auteur
Remi Helleboid, Denis Rideau, Isobel Nicholson, Jeremy Grebot, Bastien Mamdy, Gabriel Mugny, Marie Basset, Megan Agnew, Dominique Golanski, Sara Pellegrini, Jerome Saint-Martin, Marco Pala, Philippe Dollfus
article
Journal of Physics D: Applied Physics, 2022, 55, pp.505102. ⟨10.1088/1361-6463/ac9b6a⟩
titre
Phonon-assisted transport in van der Waals heterostructure tunnel devices
auteur
A. M'Foukh, Jérôme Saint-Martin, Philippe Dollfus, Marco G. Pala
article
Solid-State Electronics, 2022, 194, pp.108344. ⟨10.1016/j.sse.2022.108344⟩
titre
Revisiting thermal conductivity and interface conductance at the nanoscale
auteur
B. Davier, P. Dollfus, N.D. Le, S. Volz, J. Shiomi, Jérôme Saint-Martin
article
International Journal of Heat and Mass Transfer, 2022, 183, Part A, pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
titre
Revisiting thermal conductivity and interface conductance at the nanoscale
auteur
Brice Davier, Philippe Dollfus, N.D. Le, S. Volz, J. Shiomi, Jérôme Saint-Martin
article
International Journal of Heat and Mass Transfer, 2022, 183 (Part A), pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
titre
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts
auteur
D. Lizzit, P. Khakbaz, F. Driussi, Marco Pala, D. Esseni
article
68th IEEE International Electron Devices Meeting (IEDM 2022), Dec 2022, San Francisco, CA, United States. pp.28.2.1-28.2.4, ⟨10.1109/IEDM45625.2022.10019449⟩
titre
Quenching Statistics of Silicon Single Photon Avalanche Diodes
auteur
Thibauld Cazimajou, Marco G. Pala, Jerome Saint-Martin, Remi Helleboid, Jeremy Grebot, Denis Rideau, Philippe Dollfus
article
IEEE Journal of the Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3127013⟩
titre
A new mixed hardening methodology applied to a 28 nm FDSOI 32-bits DSP subjected to gamma radiation
auteur
Alejandro Ureña-Acuña, Jean-Marc Armani, Mariem Slimani, Ivan Miro-Panades, Philippe Dollfus
article
Microelectronics Reliability, 2021, 126, pp.114397. ⟨10.1016/j.microrel.2021.114397⟩
titre
Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer
auteur
Cyrine Ernandes, Lama Khalil, Hugo Henck, Meng-Qiang Zhao, Julien Chaste, Fabrice Oehler, Alan Johnson, Maria Asensio, Debora Pierucci, Marco Pala, José Avila, Abdelkarim Ouerghi
article
Nanomaterials, 2021, 11 (11), pp.2921. ⟨10.3390/nano11112921⟩
titre
Revisiting thermal conductivity and interface conductance at the nanoscale
auteur
Brice Davier, Philippe Dollfus, N D Le, Sebastian Volz, J Shiomi, J Saint-Martin
article
International Journal of Heat and Mass Transfer, 2021, 183, ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
titre
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
auteur
Jiang Cao, Yu Wu, Hao Zhang, Demetrio Logoteta, Shengli Zhang, Marco Pala
article
npj 2D Materials and Applications, 2021, 5 (1), ⟨10.1038/s41699-021-00238-9⟩
titre
1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices
auteur
Markus Muller, Philippe Dollfus, Michael Schroter
article
IEEE Transactions on Electron Devices, 2021, 68 (3), pp.1221-1227. ⟨10.1109/TED.2021.3051552⟩
titre
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
auteur
Cyrine Ernandes, Lama Khalil, Hela Almabrouk, Debora Pierucci, Biyuan Zheng, José Avila, Pavel Dudin, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Thibault Brulé, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi
article
npj 2D Materials and Applications, 2021, 5, pp.7. ⟨10.1038/s41699-020-00187-9⟩
titre
Electronic band gap of van der Waals α-As2Te3 crystals
auteur
Lama Khalil, Jean-Christophe Girard, Debora Pierucci, Federico Bisti, Julien Chaste, Fabrice Oehler, Charlie Gréboval, Ulrich Nguétchuissi Noumbé, Jean-Francois Dayen, Demetrio Logoteta, Gilles Patriarche, Julien Rault, Marco Pala, Emmanuel Lhuillier, Abdelkarim Ouerghi
article
Applied Physics Letters, 2021, 119 (4), pp.043103. ⟨10.1063/5.0058291⟩
titre
A New Mixed Hardening Methodology applied to a 28nm FDSOI 32-bits DSP Subjected to Gamma Radiation
auteur
Alejandro Ureña-Acuña, Jean-Marc Armani, Mariem Slimani, I Miro-Panades, Philippe Dollfus
article
ESREF 2021 : 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, IMS laboratory, University of Bordeaux; LAAS-CNRS, University of Toulouse – Bordeaux, Oct 2021, Bordeaux, France. pp.114397
titre
Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability
auteur
Denis Rideau, Y. Oussaiti, J. Grebot, R. Helleboid, A. Lopez, G. Mugny, E. Bourreau, D. Golanski, B. Mamdy, H. Wehbe Alause, I. Nicholson, S. Pellegrini, C.E. Vlimant, M. Agnew, T. Cazimajou, M. Pala, Jérôme Saint-Martin, Philippe Dollfus
article
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States
titre
Spectral simulation of heat transfer across polytype interfaces
auteur
N. Izitounene, N. D. Le, B. Davier, P. Dollfus, Lorenzo Paulatto, Jérôme Saint-Martin
article
Fall Meeting of the European Materials Research Society (E-MRS) 2021, Sep 2021, VIRTUAL Conference, Poland
titre
Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics
auteur
Thibauld Cazimajou, Marco Pala, Jérôme Saint-Martin, Denis Rideau, Philippe Dollfus
article
21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea
titre
Study of the modal contributions to the heat flux to characterize the phonon transport regime in Si/Ge heterojunctions
auteur
Ngoc Duc Le, Brice Davier, Philippe Dollfus, Jérôme Saint-Martin
article
21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea
titre
Electron transport properties of graphene nanoribbons with Gaussian deformation
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
article
Physical Review B, 2020, 102 (7), ⟨10.1103/PhysRevB.102.075425⟩
titre
A mixed method to mitigate the TID effects on 28nm FDSOI transistors
auteur
Alejandro Ureña-Acuña, Jean-Marc Armani, Mariem Slimani, Mikael Casse, Philippe Dollfus
article
Radecs 2020 - 20th European Conference on Radiation and Its Effects on Components and Systems, Oct 2020, Toulouse (virtual event), France. ⟨10.1109/RADECS50773.2020.9857702⟩
titre
A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect
auteur
Demetrio Logoteta, Marco Pala, Jean Choukroun, Philippe Dollfus, Giuseppe Iannaccone
article
IEEE Electron Device Letters, 2019, 40 (9), pp.1550-1553. ⟨10.1109/LED.2019.2928131⟩
titre
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices
auteur
Marco Pala, David Esseni
article
Journal of Applied Physics, 2019, 126 (5), pp.055703. ⟨10.1063/1.5109187⟩
titre
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions
auteur
Jean Choukroun, Marco Pala, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus
article
Nanotechnology, 2019, 30 (2), pp.025201. ⟨10.1088/1361-6528/aae7df⟩
titre
Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors
auteur
Marco Pala, D. Esseni
article
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870406⟩
titre
Nanoscale heat transfer via Ab-Initio Monte Carlo simulation
auteur
Brice Davier, Jérôme Larroque, Philippe Dollfus, Laurent Chaput, Sebastian Volz, Jérôme Saint-Martin
article
20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States
titre
On the origins of transport inefficiencies in mesoscopic networks
auteur
Sébastien Toussaint, Frederico Martins, Sebastien Faniel, Marco Pala, L. Desplanque, Xavier Wallart, Hermann Sellier, Serge Huant, Vincent Bayot, Benoit Hackens
article
Scientific Reports, 2018, 8, pp.3017. ⟨10.1038/s41598-018-21250-y⟩
titre
Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation
auteur
Brice Davier, Jérôme Larroque, Philippe Dollfus, Laurent Chaput, Sebastian Volz, David Lacroix, Jérôme Saint-Martin
article
Journal of Physics: Condensed Matter, In press, 30 (49), pp.495902. ⟨10.1088/1361-648X/aaea4f⟩
titre
Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study
auteur
Corentin Grillet, Alessandro Cresti, Marco Pala
article
IEEE Transactions on Electron Devices, 2018, 65 (7), pp.3038-3044. ⟨10.1109/TED.2018.2834307⟩
titre
Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors
auteur
Jiang Cao, Demetrio Logoteta, Marco Pala, Alessandro Cresti
article
Journal of Physics D: Applied Physics, 2018, 51 (5), pp.055102. ⟨10.1088/1361-6463/aaa1b6⟩
titre
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs
auteur
Demetrio Logoteta, Nicolas Cavassilas, Alessandro Cresti, Marco Pala, Marc Bescond
article
IEEE Transactions on Electron Devices, 2018, 65 (2), pp.424 - 430. ⟨10.1109/TED.2017.2785123⟩
titre
Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures
auteur
Jiang Cao, Jejune Park, François Triozon, Marco Pala, Alessandro Cresti
article
Composants nanoélectroniques, 2018, 18 (1), ⟨10.21494/ISTE.OP.2018.0222⟩
titre
Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models
auteur
Jérôme Larroque, Philippe Dollfus, Jérôme Saint-Martin
article
Journal of Applied Physics, 2018, 123 (2), ⟨10.1063/1.5007034⟩
titre
High thermoelectric and electronic performance in graphene nanoribbons by isotope and vacancy engineering
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
article
Materials Today: Proceedings, 2018, 4 (4, Part 1), pp.10393-10400. ⟨10.1016/j.matpr.2017.12.287⟩
titre
High thermoelectric performance of graphite nanofibers
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
article
Nanoscale, 2018, 10 (8), pp.3784 - 3791. ⟨10.1039/C7NR07817J⟩
titre
Ab initio based calculations of the thermal conductivity at the micron scale
auteur
Laurent Chaput, Jérôme Larroque, Philippe Dollfus, Jérôme Saint-Martin, David Lacroix
article
Applied Physics Letters, 2018, 112 (3), pp.033104. ⟨10.1063/1.5010959⟩
titre
Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures
auteur
B. Davier, J. Larroque, Philippe Dollfus, Laurent Chaput, S. Volz, David Lacroix, Jérôme Saint-Martin
article
Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
titre
Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devices
auteur
Marco Pala, Oves Badami, David Esseni
article
2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.33.1.1-33.1.4, ⟨10.1109/IEDM.2018.8614613⟩
titre
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures
auteur
Denis Rideau, Gabriel Mugny, Marco Pala, David Esseni
article
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2018, Austin, France. pp.224-227, ⟨10.1109/SISPAD.2018.8551706⟩
titre
THERMIC: a hardened temperature controller for regenerating CMOS circuits exposed to ionizing radiation
auteur
Jean-Marc Armani, Alejandro Ureña-Acuña, Philippe Dollfus, Mariem Slimani
article
Radecs 2018 - 18th European Conference on Radiation and Its Effects on Components and Systems, Sep 2018, Göteborg, Sweden. ⟨10.1109/RADECS45761.2018.9328696⟩
titre
High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors
auteur
Marco G. Pala, Jean Choukroun, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus
article
48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩
titre
Thermoelectric properties of Quantum Dot-based devices
auteur
Vincent Talbo, Jérôme Saint-Martin, Philippe Dollfus
article
IEEE NANO 2018, Jul 2018, Cork, Ireland
titre
Enhanced Seebeck effect in graphene devices by strain and doping engineering
auteur
Mai-Chung Nguyen, Viet-Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, Philippe Dollfus
article
High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
titre
Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach
auteur
B. Davier, J. Larroque, P. Dollfus, Jérôme Saint-Martin
article
High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
titre
Comparison of Si/Ge interface thermal transmission modellings: Full-band mismatch models, lattice dynamics and Molecular Dynamics.
auteur
B. Davier, A. Alkurdi, J. Larroque, S. Volz, S. Merabia, Jérôme Saint-Martin
article
Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland.
titre
Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors
auteur
Vincent Talbo, Jérôme Saint-Martin, Sylvie Galdin-Retailleau, Philippe Dollfus
article
Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-14009-4⟩
titre
Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
article
Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-02230-0⟩
titre
Gold Nanoparticles on Functionalized Silicon Substrate under Coulomb Blockade Regime: An Experimental and Theoretical Investigation
auteur
Olivier Pluchery, Louis Caillard, Philippe Dollfus, Yves J Chabal
article
Journal of Physical Chemistry B, 2017, 122 (2), pp.897 - 903. ⟨10.1021/acs.jpcb.7b06979⟩
titre
Third nearest neighbor parameterized tight binding model for graphene nano-ribbons
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
article
AIP Advances, 2017, 7 (7), ⟨10.1063/1.4994771⟩
titre
Full-Band modelling of phonons in polytype Ge and Si
auteur
J. Larroque, P. Dollfus, Jérôme Saint-Martin
article
20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007
titre
Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs
auteur
Demetrio Logoteta, Nicolas Cavassilas, Marco Pala, Alessandro Cresti, Marc Bescond
article
International Workshop on Computational Nanotechnology (IWCN 2017), Jun 2017, Windermere, United Kingdom
titre
Van der Waals tunnel field effect transistors with lateral momentum mismatch
auteur
Jiang Cao, Marco Pala, Alessandro Cresti
article
2D@Grenoble, Fondation Nanosciences, Apr 2017, Grenoble, France
titre
Van der Waals tunnel field effect transistors with misoriented layers
auteur
Alessandro Cresti, Jiang Cao, Marco Pala
article
Graphene 2017, Mar 2017, Barcelona, Spain
titre
Simulation of van der Waals vertical tunnel field-effect transistors
auteur
Jiang Cao, Marco Pala, Alessandro Cresti
article
2017, pp.18
titre
Special Issue on Inelastic Scattering Introduction
auteur
Marc Bescond, Philippe Dollfus
article
Journal of Computational Electronics, 2016, 15 (4, SI), pp.1119-1122. ⟨10.1007/s10825-016-0917-z⟩
titre
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
auteur
Marco Pala, Corentin Grillet, Jiang Cao, Demetrio Logoteta, Alessandro Cresti, David Esseni
article
Journal of Computational Electronics, 2016, 15 (4), pp.1240-1247. ⟨10.1007/s10825-016-0900-8⟩
titre
Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons
auteur
T. Nghiem, Jérôme Saint-Martin, P. Dollfus
article
Journal of Computational Electronics, 2016, 15 (1), pp.3 - 15. ⟨10.1007/s10825-015-0773-2⟩
titre
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides
auteur
Jiang Cao, Alessandro Cresti, David Esseni, Marco Pala
article
Solid-State Electronics, 2016, 116, pp.1-7. ⟨10.1016/j.sse.2015.11.003⟩
titre
High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
article
Nanotechnology, 2015, 26 (49), ⟨10.1088/0957-4484/26/49/495202⟩
titre
Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
article
Semiconductor Science and Technology, 2015, 30 (10), ⟨10.1088/0268-1242/30/10/105002⟩
titre
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs
auteur
David Esseni, Marco Pala, Tommaso Rollo
article
IEEE Transactions on Electron Devices, 2015, 62 (9), pp.3084-3091. ⟨10.1109/TED.2015.2458171⟩
titre
Enhanced Seebeck effect in graphene devices by strain and doping engineering
auteur
M. Chung Nguyen, V. Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, P. Dollfus
article
Physica E: Low-dimensional Systems and Nanostructures, 2015, 73, pp.207 - 212. ⟨10.1016/j.physe.2015.05.020⟩
titre
Exploiting Hetero-Junctions to Improve the Performance of III–V Nanowire Tunnel-FETs
auteur
Marco Pala, Sylvan Brocard
article
IEEE Journal of the Electron Devices Society, 2015, 3 (3), pp.115-121. ⟨10.1109/JEDS.2015.2395719⟩
titre
Thermoelectric effects in graphene nanostructures
auteur
Philippe Dollfus, Viet Hung Nguyen, Jérôme Saint-Martin
article
Journal of Physics: Condensed Matter, 2015, 27 (13), ⟨10.1088/0953-8984/27/13/133204⟩
titre
Strain-induced conduction gap in vertical devices made of misoriented graphene layers
auteur
V Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, P. Dollfus
article
Nanotechnology, 2015, 26 (11), ⟨10.1088/0957-4484/26/11/115201⟩
titre
Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy
auteur
Peng Liu, Frederico Martins, Benoit Hackens, L. Desplanque, Xavier Wallart, Marco Pala, Serge Huant, Vincent Bayot, Hermann Sellier
article
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (7), pp.075313. ⟨10.1103/PhysRevB.91.075313⟩
titre
Proposal for a graphene-based all-spin logic gate
auteur
Li Su, Weisheng Zhao, Yue Zhang, Damien S Querlioz, Youguang Zhang, Jacques-Olivier Klein, Philippe Dollfus, Arnaud Bournel
article
Applied Physics Letters, 2015
titre
A computational study of van der Waals tunnel transistors: Fundamental aspects and design challenges
auteur
Jiang Cao, Demetrio Logoteta, Sibel Ozkaya, Blanca Biel, Alessandro Cresti, Marco Pala, David Esseni
article
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.12.5.1 - 12.5.4, ⟨10.1109/IEDM.2015.7409684⟩
titre
Quantum simulation of tunnel field-effect transistors based on a vertical heterojunction of 2D transition metal dichalcogenides
auteur
Jiang Cao, Marco Pala, Alessandro Cresti, David Esseni
article
Annual meeting of the GDRi Graphene and Nanotubes, Nov 2015, Aussois, France
titre
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier
auteur
Luca Lucci, Jean-Charles Barbé, Marco Pala
article
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.128-131, ⟨10.1109/SISPAD.2015.7292275⟩
titre
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals
auteur
Jiang Cao, Marco Pala, Alessandro Cresti, David Esseni
article
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.245-248, ⟨10.1109/ULIS.2015.7063819⟩
titre
Enhanced thermoelectric figure of merit in vertical graphene junctions
auteur
Viet-Hung Nguyen, Mai Chung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, Philippe Dollfus
article
Applied Physics Letters, 2014, 105 (13), ⟨10.1063/1.4896915⟩
titre
New insights into self-heating in double-gate transistors by solving Boltzmann transport equations
auteur
T. Thu Trang Nghiêm, Jérôme Saint-Martin, P. Dollfus
article
Journal of Applied Physics, 2014, 116 (7), ⟨10.1063/1.4893646⟩
titre
Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap
auteur
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
article
Applied Physics Letters, 2014, 105 (7), ⟨10.1063/1.4893697⟩
titre
A Klein-tunneling transistor with ballistic graphene
auteur
Quentin Wilmart, Salim Berrada, David Torrin, V Hung Nguyen, Gwendal Fève, Jean-Marc Berroir, Philippe Dollfus, Bernard Plaçais
article
2D Materials, 2014, 1 (1), pp.011006. ⟨10.1088/2053-1583/1/1/011006⟩
titre
On the non-linear effects in graphene devices
auteur
Viet Hung Nguyen, Alfonso Alarcón, Salim Berrada, Van Nam Do, Jérôme Saint-Martin, Damien Querlioz, Arnaud Bournel, Philippe Dollfus
article
Journal of Physics D: Applied Physics, 2014, 47 (9), pp.094007
titre
Quantum simulation of a 2-D heterojunction interlayer tunneling field effect transistor
auteur
Jiang Cao, Marco Pala, Alessandro Cresti, David Esseni
article
2nd Workshop Graphene in Grenoble, Fondation Nanosciences, Nov 2014, Grenoble, France
titre
(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects
auteur
David Esseni, Marco Pala, Revelant A., P. Palestri, M. Li, G. Snider, D. Jena, H.G. Xing
article
226th ECS and SMEQ Joint International Meeting: SiGe,Ge and Related Compounds: Materials, Processing and Devices 6, S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, Oct 2014, Cacun, Mexico
titre
Quantum simulation of self-heating effects in rough Si nanowire FETs
auteur
Marco Pala, Alessandro Cresti
article
17th International Workshop on Computational Electronics (IWCE 2014), Jun 2014, Paris, France. pp.1-3, ⟨10.1109/IWCE.2014.6865827⟩
titre
(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs
auteur
Marco Pala, David Esseni
article
225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing, D. Misra, Y. Obeng, T. Chikyow, H. Iwai, Z. Chen and D. Bauza, May 2014, Orlando, United States
titre
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy
auteur
Gustavo Ardila, Anne Kaminski-Cachopo, Marco Pala, Alessandro Cresti, Laurent Montes, Vincent Consonni, Ronan Hinchet, Jerome Michallon, Mehdi Daanoune, Mauro Zanuccoli, Claudio Fiegna, Mireille Mouis
article
A. Nazarov; F. Balestra; V. Kilchytska; D. Flandre. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting, Springer International Publishing, pp.223-240, 2014, 978-3-319-08803-7. ⟨10.1007/978-3-319-08804-4_11⟩
titre
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy
auteur
Gustavo Ardila, Anne Kaminski-Cachopo, Marco Pala, Alessandro Cresti, Laurent Montès, Vincent Consonni, Ronan Hinchet, Jérôme Michallon, Mehdi Daanoune, Mauro Zanuccoli, Claudio Fiegna, Mireille Mouis
article
Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting, Springer International Publishing, pp.223-240, 2014, Engineering Materials, ⟨10.1007/978-3-319-08804-4_11⟩
titre
Nanowire Devices
auteur
Gérard Ghibaudo, Sylvain Barraud, Mikaël Cassé, Xin Peng Wang, Guo Qiang Lo, Dim-Lee Kwong, Marco Pala, Zheng Fang
article
Ed. by F. Balestra. Beyond‐CMOS Nanodevices 2, Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7. ⟨10.1002/9781118985137.ch2⟩
titre
Graphene nanomesh transistor with high on/off ratio and good saturation behavior
auteur
Salim Berrada, Viet Hung Nguyen, Damien Querlioz, Jérôme Saint-Martin, Alfonso Alarcón, Christophe Chassat, Arnaud Bournel, Philippe Dollfus
article
Applied Physics Letters, 2013, 103 (18), pp.183509
titre
Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications
auteur
Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Nicolas Wichmann, S. Bollaert, Francois Danneville, Philippe Dollfus
article
Solid-State Electronics, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩
titre
Decoherence effects in the Wigner function formalism
auteur
Philipp Schwaha, Damien Querlioz, Philipp Dollfus, Jérôme Saint-Martin, Mihail Nedjalkov, Siegfried Selberherr
article
Journal of Computational Electronics, 2013, 12 (3), pp.388-396
titre
Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance
auteur
Viet Hung Nguyen, Jérôme Saint-Martin, Damien Querlioz, Fulvio Mazzamuto, Arnaud Bournel, Yann-Michel Niquet, Philippe Dollfus
article
Journal of Computational Electronics, 2013, 12 (2), pp.85-93
titre
Immunity to Device Variations in a Spiking Neural Network With Memristive Nanodevices
auteur
Damien Querlioz, Olivier Bichler, Philippe Dollfus, Christian Gamrat
article
IEEE Transactions on Nanotechnology, 2013, 12 (3), pp.288 - 295. ⟨10.1109/TNANO.2013.2250995⟩
titre
Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors
auteur
Alfonso Alarcón, Viet-Hung Nguyen, Salim Berrada, Damien Querlioz, Jérôme Saint-Martin, Arnaud Bournel, Philippe Dollfus
article
IEEE Transactions on Electron Devices, 2013, 60 (3), pp.985-991
titre
Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor
auteur
Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Philippe Dollfus, Jiongjong Mo, Nicolas Wichmann, L. Desplanque, Xavier Wallart, Francois Danneville, S. Bollaert
article
Journal of Nanoscience and Nanotechnology, 2013, 13 (2), pp.771-775
titre
Multiscale simulation of carbon nanotube transistors
auteur
Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Sylvie Retailleau, Huu Nha Nguyen, Damien Querlioz, Arnaud Bournel, Philippe Dollfus, François Triozon, Yann-Michel Niquet, Stephan Roche
article
Solid-State Electronics, 2013, 89, pp.26-67. ⟨10.1016/j.sse.2013.06.013⟩
titre
Graphene nanomesh transistor with high on/off ratio and good saturation behavior
auteur
Salim Berrada, Viet Hung Nguyen, Damien Querlioz, Jérôme Saint-Martin, Alfonso Alarcón, Christophe Chassat, Arnaud Bournel, Philippe Dollfus
article
Applied Physics Letters, 2013, 103 (18), ⟨10.1063/1.4828496⟩
titre
Beyond CMOS
auteur
Giuseppe Iannaccone, Gianluca Fiori, Susanna Reggiani, Marco Pala
article
Nanoscale CMOS, 1, Wiley, 2013, ⟨10.1002/9781118621523.ch12⟩
titre
A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks
auteur
Marco Pala, Hermann Sellier, Benoit Hackens, Frederico Martins, Vincent Bayot, Serge Huant
article
Nanoscale Research Letters, 2012, 7, pp.472. ⟨10.1186/1556-276X-7-472⟩
titre
Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors
auteur
Audrey Valentin, Vincent Talbo, Sylvie Galdin-Retailleau, Philippe Dollfus
article
IEEE Transactions on Electron Devices, 2011, 58 (10), pp.3286-3293. ⟨10.1109/TED.2011.2161611⟩
titre
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs
auteur
Alessandro Cresti, Marco Pala, Stefano Poli, Mireille Mouis, Gérard Ghibaudo
article
IEEE Transactions on Electron Devices, 2011, 58 (8), pp.2274-2281. ⟨10.1109/TED.2011.2147318⟩
titre
Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
auteur
F. Mazzamuto, V. Hung Nguyen, Y. Apertet, C. Caër, C. Chassat, Jérôme Saint-Martin, P. Dollfus
article
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (23), ⟨10.1103/PhysRevB.83.235426⟩
titre
Learning with memristive devices: How should we model their behavior?
auteur
Damien Querlioz, Philippe Dollfus, Olivier Bichler, Christian Gamrat
article
2011 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jun 2011, San Diego, United States. ⟨10.1109/NANOARCH.2011.5941497⟩
titre
Quantum Simulation of Silicon-Nanowire FETs
auteur
Marco Pala
article
Semiconductor-On-Insulator Materials for Nanoelectronics Applications, Springer Berlin Heidelberg, pp.237-249, 2011, Engineering Materials, ⟨10.1007/978-3-642-15868-1_13⟩
titre
Spin-orbit coupling and phase-coherence in InAs nanowires
auteur
Estevez Hernandez S., M. Akabori, K. Sladek, Volk Ch., S. Alagha, H. Hardtdegen, Marco Pala, D. Grützmacher, Schäpers Th.
article
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.235303. ⟨10.1103/PhysRevB.82.235303⟩
titre
Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET
auteur
Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher
article
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
titre
Phonon effect on single-electron transport in two-dot semiconductor devices
auteur
Audrey Valentin, Sylvie Galdin-Retailleau, Philippe Dollfus
article
Journal of Applied Physics, 2009, 106 (4), pp.044501. ⟨10.1063/1.3186035⟩
titre
Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology
auteur
Vincent Barral, Thierry Poiroux, Jérôme Saint-Martin, Daniela Munteanu, Jean-Luc Autran, Simon Deleonibus
article
IEEE Transactions on Electron Devices, 2009, 56 (3), pp.408-419. ⟨10.1109/TED.2008.2011681⟩
titre
Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study
auteur
Fulvio Mazzamuto, Jérôme Saint-Martin, Arnaud Bournel, P. Dollfus, Alexandre Archambault, François Marquier, Jean-Jacques Greffet
article
Journal of Physics: Conference Series, 2009, 193 (1), pp.012015. ⟨10.1088/1742-6596/193/1/012015⟩
titre
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
auteur
M. Bescond, M. Lannoo, Fabienne Michelini, L. Raymond, Marco Pala
article
Microelectronics Journal, 2009, 40, pp.756-758
titre
Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs
auteur
S. Poli, Marco Pala
article
IEEE Electron Device Letters, 2009, 30 (11), pp.1212-1214
titre
Study of phonon modes in silicon nanocrystals using the adiabatic bond charge model
auteur
Audrey Valentin, Johann Sée, Sylvie Galdin-Retailleau, Philippe Dollfus
article
Journal of Physics: Condensed Matter, 2008, 20 (14), pp.145213. ⟨10.1088/0953-8984/20/14/145213⟩
titre
On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation
auteur
D. Querlioz, Jérôme Saint-Martin, K. Huet, A. Bournel, V. Aubry-Fortuna, C. Chassat, S. Galdin-Retailleau, P. Dollfus
article
IEEE Transactions on Electron Devices, 2007, 54 (9), pp.2232 - 2242. ⟨10.1109/TED.2007.902713⟩
titre
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas
auteur
Jérôme Saint-Martin, A. Bournel, F Monsef, C. Chassat, P. Dollfus
article
Semiconductor Science and Technology, 2006, 21 (4), pp.L29 - L31. ⟨10.1088/0268-1242/21/4/L01⟩
titre
Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs
auteur
Jérôme Saint-Martin, Damien Querlioz, Arnaud Bournel, Philippe Dollfus
article
2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩
titre
ETUDE PAR SIMULATION MONTE CARLO D'ARCHITECTURES DE MOSFET ULTRACOURTS A GRILLE MULTIPLE SUR SOI
auteur
Jérôme Saint-Martin
article
Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2005. Français. ⟨NNT : ⟩
titre
On the Ballistic Transport in Nanometer-Scaled DG MOSFETs
auteur
Jérôme Saint-Martin, A. Bournel, P. Dollfus
article
IEEE Transactions on Electron Devices, 2004, 51 (7), pp.1148 - 1155. ⟨10.1109/TED.2004.829904⟩