- titre
- Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off
- auteur
- Daniel Lizzit, Pedram Khakbaz, Francesco Driussi, Marco Pala, David Esseni
- article
- ACS Applied Nano Materials, 2023, 6 (7), pp.5737-5746. ⟨10.1021/acsanm.3c00166⟩
- titre
- Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer
- auteur
- Lama Khalil, Debora Pierucci, Emilio Velez-Fort, José Avila, Céline Vergnaud, Pavel Dudin, Fabrice Oehler, Julien Chaste, Matthieu Jamet, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi
- article
- Nanotechnology, 2023, 34 (4), pp.045702. ⟨10.1088/1361-6528/ac9abe⟩
- titre
- α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene
- auteur
- Lama Khalil, Pietro Maria Forcella, Geoffroy Kremer, Federico Bisti, Julien Chaste, Jean-Christophe Girard, Fabrice Oehler, Marco Pala, Jean-Francois Dayen, Demetrio Logoteta, Mark Goerbig, François Bertran, Patrick Le Fèvre, Emmanuel Lhuillier, Julien E. Rault, Debora Pierucci, Gianni Profeta, Abdelkarim Ouerghi
- article
- Physical Review B, 2022, 106 (12), pp.125152. ⟨10.1103/physrevb.106.125152⟩
- titre
- Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation
- auteur
- N. Le, Brice Davier, N. Izitounene, Philippe Dollfus, J. Saint-Martin
- article
- Journal of Computational Electronics, 2022, 21 (4), pp.744-755. ⟨10.1007/s10825-022-01885-x⟩
- titre
- Modeling of SPAD avalanche breakdown probability and jitter tail with field lines
- auteur
- Rémi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Jérôme Saint-Martin, Marco G. Pala, Philippe Dollfus
- article
- Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩
- titre
- Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation
- auteur
- Philippe Dollfus, Jérôme Saint-Martin, T. Cazimajou, R. Helleboid, A. Pilotto, D. Rideau, A. Bournel, Marco G. Pala
- article
- Solid-State Electronics, 2022, 194, pp.108361. ⟨10.1016/j.sse.2022.108361⟩
- titre
- Spectral Simulation of Heat Transfer Across Polytype Interfaces
- auteur
- Nadjib Izitounene, Ngoc Duc Le, Brice Davier, Philippe Dollfus, Lorenzo Paulatto, Jérome Saint-Martin
- article
- Crystal Research and Technology, 2022, 57 (9), pp.2200017. ⟨10.1002/crat.202200017⟩
- titre
- Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy
- auteur
- Debora Pierucci, Aymen Mahmoudi, Mathieu Silly, Federico Bisti, Fabrice Oehler, Gilles Patriarche, Frédéric Bonell, Alain Marty, Céline Vergnaud, Matthieu Jamet, Hervé Boukari, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi
- article
- Nanoscale, 2022, 14 (15), pp.5859-5868. ⟨10.1039/D2NR00458E⟩
- titre
- Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices
- auteur
- Remi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Marie Basset, Antonin Zimmer, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre, Christel Buj, Guillaume Marchand, Jérôme Saint-Martin, Marco G. Pala, Philippe Dollfus
- article
- IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩
- titre
- A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes
- auteur
- Remi Helleboid, Denis Rideau, Isobel Nicholson, Jeremy Grebot, Bastien Mamdy, Gabriel Mugny, Marie Basset, Megan Agnew, Dominique Golanski, Sara Pellegrini, Jerome Saint-Martin, Marco Pala, Philippe Dollfus
- article
- Journal of Physics D: Applied Physics, In press, ⟨10.1088/1361-6463/ac9b6a⟩
- titre
- Phonon-assisted transport in van der Waals heterostructure tunnel devices
- auteur
- A. M'Foukh, Jérôme Saint-Martin, Philippe Dollfus, Marco G. Pala
- article
- Solid-State Electronics, 2022, 194, pp.108344. ⟨10.1016/j.sse.2022.108344⟩
- titre
- Revisiting thermal conductivity and interface conductance at the nanoscale
- auteur
- B. Davier, P. Dollfus, N.D. Le, S. Volz, J. Shiomi, Jérôme Saint-Martin
- article
- International Journal of Heat and Mass Transfer, 2022, 183, Part A, pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
- titre
- Revisiting thermal conductivity and interface conductance at the nanoscale
- auteur
- Brice Davier, Philippe Dollfus, N.D. Le, S. Volz, J. Shiomi, Jérôme Saint-Martin
- article
- International Journal of Heat and Mass Transfer, 2022, 183 (Part A), pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
- titre
- Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts
- auteur
- D. Lizzit, P. Khakbaz, F. Driussi, Marco Pala, D. Esseni
- article
- 68th IEEE International Electron Devices Meeting (IEDM 2022), Dec 2022, San Francisco, CA, United States. pp.28.2.1-28.2.4, ⟨10.1109/IEDM45625.2022.10019449⟩
- titre
- Quenching Statistics of Silicon Single Photon Avalanche Diodes
- auteur
- Thibauld Cazimajou, Marco G. Pala, Jerome Saint-Martin, Remi Helleboid, Jeremy Grebot, Denis Rideau, Philippe Dollfus
- article
- IEEE Journal of the Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3127013⟩
- titre
- Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer
- auteur
- Cyrine Ernandes, Lama Khalil, Hugo Henck, Meng-Qiang Zhao, Julien Chaste, Fabrice Oehler, Alan Johnson, Maria Asensio, Debora Pierucci, Marco Pala, José Avila, Abdelkarim Ouerghi
- article
- Nanomaterials, 2021, 11 (11), pp.2921. ⟨10.3390/nano11112921⟩
- titre
- Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
- auteur
- Jiang Cao, Yu Wu, Hao Zhang, Demetrio Logoteta, Shengli Zhang, Marco Pala
- article
- npj 2D Materials and Applications, 2021, 5 (1), ⟨10.1038/s41699-021-00238-9⟩
- titre
- 1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices
- auteur
- Markus Muller, Philippe Dollfus, Michael Schroter
- article
- IEEE Transactions on Electron Devices, 2021, 68 (3), pp.1221-1227. ⟨10.1109/TED.2021.3051552⟩
- titre
- Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
- auteur
- Cyrine Ernandes, Lama Khalil, Hela Almabrouk, Debora Pierucci, Biyuan Zheng, José Avila, Pavel Dudin, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Thibault Brulé, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi
- article
- npj 2D Materials and Applications, 2021, 5, pp.7. ⟨10.1038/s41699-020-00187-9⟩
- titre
- Electronic band gap of van der Waals α-As2Te3 crystals
- auteur
- Lama Khalil, Jean-Christophe Girard, Debora Pierucci, Federico Bisti, Julien Chaste, Fabrice Oehler, Charlie Gréboval, Ulrich Nguétchuissi Noumbé, Jean-Francois Dayen, Demetrio Logoteta, Gilles Patriarche, Julien Rault, Marco Pala, Emmanuel Lhuillier, Abdelkarim Ouerghi
- article
- Applied Physics Letters, 2021, 119 (4), pp.043103. ⟨10.1063/5.0058291⟩
- titre
- A New Mixed Hardening Methodology applied to a 28nm FDSOI 32-bits DSP Subjected to Gamma Radiation
- auteur
- Alejandro Ureña-Acuña, Jean-Marc Armani, Mariem Slimani, I Miro-Panades, Philippe Dollfus
- article
- ESREF 2021 : 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, IMS laboratory, University of Bordeaux; LAAS-CNRS, University of Toulouse – Bordeaux, Oct 2021, Bordeaux, France. pp.114397
- titre
- Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability
- auteur
- Denis Rideau, Y. Oussaiti, J. Grebot, R. Helleboid, A. Lopez, G. Mugny, E. Bourreau, D. Golanski, B. Mamdy, H. Wehbe Alause, I. Nicholson, S. Pellegrini, C.E. Vlimant, M. Agnew, T. Cazimajou, M. Pala, Jérôme Saint-Martin, P. Dollfus
- article
- International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States
- titre
- Spectral simulation of heat transfer across polytype interfaces
- auteur
- N. Izitounene, N. D. Le, B. Davier, P. Dollfus, Lorenzo Paulatto, Jérôme Saint-Martin
- article
- Fall Meeting of the European Materials Research Society (E-MRS) 2021, Sep 2021, VIRTUAL Conference, Poland
- titre
- Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics
- auteur
- Thibauld Cazimajou, Marco Pala, Jérôme Saint-Martin, Denis Rideau, Philippe Dollfus
- article
- 21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea
- titre
- Study of the modal contributions to the heat flux to characterize the phonon transport regime in Si/Ge heterojunctions
- auteur
- Ngoc Duc Le, Brice Davier, Philippe Dollfus, Jérôme Saint-Martin
- article
- 21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea
- titre
- Electron transport properties of graphene nanoribbons with Gaussian deformation
- auteur
- Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
- article
- Physical Review B, 2020, 102 (7), ⟨10.1103/PhysRevB.102.075425⟩
- titre
- A mixed method to mitigate the TID effects on 28nm FDSOI transistors
- auteur
- Alejandro Ureña-Acuña, Jean-Marc Armani, Mariem Slimani, Mikael Casse, Philippe Dollfus
- article
- Radecs 2020 - 20th European Conference on Radiation and Its Effects on Components and Systems, Oct 2020, Toulouse (virtual event), France. ⟨10.1109/RADECS50773.2020.9857702⟩
- titre
- A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect
- auteur
- Demetrio Logoteta, Marco Pala, Jean Choukroun, Philippe Dollfus, Giuseppe Iannaccone
- article
- IEEE Electron Device Letters, 2019, 40 (9), pp.1550-1553. ⟨10.1109/LED.2019.2928131⟩
- titre
- Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices
- auteur
- Marco Pala, David Esseni
- article
- Journal of Applied Physics, 2019, 126 (5), pp.055703. ⟨10.1063/1.5109187⟩
- titre
- High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions
- auteur
- Jean Choukroun, Marco Pala, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus
- article
- Nanotechnology, 2019, 30 (2), pp.025201. ⟨10.1088/1361-6528/aae7df⟩
- titre
- Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors
- auteur
- Marco Pala, D. Esseni
- article
- 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870406⟩
- titre
- Nanoscale heat transfer via Ab-Initio Monte Carlo simulation
- auteur
- Brice Davier, Jérôme Larroque, Philippe Dollfus, Laurent Chaput, Sebastian Volz, Jérôme Saint-Martin
- article
- 20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States
- titre
- On the origins of transport inefficiencies in mesoscopic networks
- auteur
- Sébastien Toussaint, Frederico Martins, Sebastien Faniel, Marco Pala, L. Desplanque, Xavier Wallart, Hermann Sellier, Serge Huant, Vincent Bayot, Benoit Hackens
- article
- Scientific Reports, 2018, 8, pp.3017. ⟨10.1038/s41598-018-21250-y⟩
- titre
- Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation
- auteur
- Brice Davier, Jérôme Larroque, Philippe Dollfus, Laurent Chaput, Sebastian Volz, David Lacroix, Jérôme Saint-Martin
- article
- Journal of Physics: Condensed Matter, In press, 30 (49), pp.495902. ⟨10.1088/1361-648X/aaea4f⟩
- titre
- Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study
- auteur
- Corentin Grillet, Alessandro Cresti, Marco Pala
- article
- IEEE Transactions on Electron Devices, 2018, 65 (7), pp.3038-3044. ⟨10.1109/TED.2018.2834307⟩
- titre
- Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors
- auteur
- Jiang Cao, Demetrio Logoteta, Marco Pala, Alessandro Cresti
- article
- Journal of Physics D: Applied Physics, 2018, 51 (5), pp.055102. ⟨10.1088/1361-6463/aaa1b6⟩
- titre
- Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs
- auteur
- Demetrio Logoteta, Nicolas Cavassilas, Alessandro Cresti, Marco Pala, Marc Bescond
- article
- IEEE Transactions on Electron Devices, 2018, 65 (2), pp.424 - 430. ⟨10.1109/TED.2017.2785123⟩
- titre
- Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures
- auteur
- Jiang Cao, Jejune Park, François Triozon, Marco Pala, Alessandro Cresti
- article
- Composants nanoélectroniques, 2018, 18 (1), ⟨10.21494/ISTE.OP.2018.0222⟩
- titre
- Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models
- auteur
- Jérôme Larroque, Philippe Dollfus, Jérôme Saint-Martin
- article
- Journal of Applied Physics, 2018, 123 (2), ⟨10.1063/1.5007034⟩
- titre
- High thermoelectric and electronic performance in graphene nanoribbons by isotope and vacancy engineering
- auteur
- Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
- article
- Materials Today: Proceedings, 2018, 4 (4, Part 1), pp.10393-10400. ⟨10.1016/j.matpr.2017.12.287⟩
- titre
- High thermoelectric performance of graphite nanofibers
- auteur
- Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
- article
- Nanoscale, 2018, 10 (8), pp.3784 - 3791. ⟨10.1039/C7NR07817J⟩
- titre
- Ab initio based calculations of the thermal conductivity at the micron scale
- auteur
- Laurent Chaput, Jérôme Larroque, Philippe Dollfus, Jérôme Saint-Martin, David Lacroix
- article
- Applied Physics Letters, 2018, 112 (3), pp.033104. ⟨10.1063/1.5010959⟩
- titre
- Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures
- auteur
- B. Davier, J. Larroque, Philippe Dollfus, Laurent Chaput, S. Volz, David Lacroix, Jérôme Saint-Martin
- article
- Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
- titre
- Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devices
- auteur
- Marco Pala, Oves Badami, David Esseni
- article
- 2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.33.1.1-33.1.4, ⟨10.1109/IEDM.2018.8614613⟩
- titre
- Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures
- auteur
- Denis Rideau, Gabriel Mugny, Marco Pala, David Esseni
- article
- 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2018, Austin, France. pp.224-227, ⟨10.1109/SISPAD.2018.8551706⟩
- titre
- THERMIC: a hardened temperature controller for regenerating CMOS circuits exposed to ionizing radiation
- auteur
- Jean-Marc Armani, Alejandro Ureña-Acuña, Philippe Dollfus, Mariem Slimani
- article
- Radecs 2018 - 18th European Conference on Radiation and Its Effects on Components and Systems, Sep 2018, Göteborg, Sweden. ⟨10.1109/RADECS45761.2018.9328696⟩
- titre
- High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors
- auteur
- Marco G. Pala, Jean Choukroun, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus
- article
- 48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩
- titre
- Thermoelectric properties of Quantum Dot-based devices
- auteur
- Vincent Talbo, Jérôme Saint-Martin, Philippe Dollfus
- article
- IEEE NANO 2018, Jul 2018, Cork, Ireland
- titre
- Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach
- auteur
- B. Davier, J. Larroque, P. Dollfus, Jérôme Saint-Martin
- article
- High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
- titre
- Enhanced Seebeck effect in graphene devices by strain and doping engineering
- auteur
- Mai-Chung Nguyen, Viet-Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, Philippe Dollfus
- article
- High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
- titre
- Comparison of Si/Ge interface thermal transmission modellings: Full-band mismatch models, lattice dynamics and Molecular Dynamics.
- auteur
- B. Davier, A. Alkurdi, J. Larroque, S. Volz, S. Merabia, Jérôme Saint-Martin
- article
- Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland.
- titre
- Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties
- auteur
- Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
- article
- Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-02230-0⟩
- titre
- Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors
- auteur
- Vincent Talbo, Jérôme Saint-Martin, Sylvie Galdin-Retailleau, Philippe Dollfus
- article
- Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-14009-4⟩
- titre
- Gold Nanoparticles on Functionalized Silicon Substrate under Coulomb Blockade Regime: An Experimental and Theoretical Investigation
- auteur
- Olivier Pluchery, Louis Caillard, Philippe Dollfus, Yves J Chabal
- article
- Journal of Physical Chemistry B, 2017, 122 (2), pp.897 - 903. ⟨10.1021/acs.jpcb.7b06979⟩
- titre
- Third nearest neighbor parameterized tight binding model for graphene nano-ribbons
- auteur
- Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz
- article
- AIP Advances, 2017, 7 (7), ⟨10.1063/1.4994771⟩
- titre
- Full-Band modelling of phonons in polytype Ge and Si
- auteur
- J. Larroque, P. Dollfus, Jérôme Saint-Martin
- article
- 20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007
- titre
- Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs
- auteur
- Demetrio Logoteta, Nicolas Cavassilas, Marco Pala, Alessandro Cresti, Marc Bescond
- article
- International Workshop on Computational Nanotechnology (IWCN 2017), Jun 2017, Windermere, United Kingdom
- titre
- Van der Waals tunnel field effect transistors with lateral momentum mismatch
- auteur
- Jiang Cao, Marco Pala, Alessandro Cresti
- article
- 2D@Grenoble, Fondation Nanosciences, Apr 2017, Grenoble, France
- titre
- Van der Waals tunnel field effect transistors with misoriented layers
- auteur
- Alessandro Cresti, Jiang Cao, Marco Pala
- article
- Graphene 2017, Mar 2017, Barcelona, Spain
- titre
- Simulation of van der Waals vertical tunnel field-effect transistors
- auteur
- Jiang Cao, Marco Pala, Alessandro Cresti
- article
- 2017, pp.18
- titre
- Special Issue on Inelastic Scattering Introduction
- auteur
- Marc Bescond, Philippe Dollfus
- article
- Journal of Computational Electronics, 2016, 15 (4, SI), pp.1119-1122. ⟨10.1007/s10825-016-0917-z⟩
- titre
- Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
- auteur
- Marco Pala, Corentin Grillet, Jiang Cao, Demetrio Logoteta, Alessandro Cresti, David Esseni
- article
- Journal of Computational Electronics, 2016, 15 (4), pp.1240-1247. ⟨10.1007/s10825-016-0900-8⟩
- titre
- Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons
- auteur
- T. Nghiem, Jérôme Saint-Martin, P. Dollfus
- article
- Journal of Computational Electronics, 2016, 15 (1), pp.3 - 15. ⟨10.1007/s10825-015-0773-2⟩
- titre
- Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides
- auteur
- Jiang Cao, Alessandro Cresti, David Esseni, Marco Pala
- article
- Solid-State Electronics, 2016, 116, pp.1-7. ⟨10.1016/j.sse.2015.11.003⟩
- titre
- High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering
- auteur
- Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
- article
- Nanotechnology, 2015, 26 (49), ⟨10.1088/0957-4484/26/49/495202⟩
- titre
- Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures
- auteur
- Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
- article
- Semiconductor Science and Technology, 2015, 30 (10), ⟨10.1088/0268-1242/30/10/105002⟩
- titre
- Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs
- auteur
- David Esseni, Marco Pala, Tommaso Rollo
- article
- IEEE Transactions on Electron Devices, 2015, 62 (9), pp.3084-3091. ⟨10.1109/TED.2015.2458171⟩
- titre
- Enhanced Seebeck effect in graphene devices by strain and doping engineering
- auteur
- M. Chung Nguyen, V. Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, P. Dollfus
- article
- Physica E: Low-dimensional Systems and Nanostructures, 2015, 73, pp.207 - 212. ⟨10.1016/j.physe.2015.05.020⟩
- titre
- Exploiting Hetero-Junctions to Improve the Performance of III–V Nanowire Tunnel-FETs
- auteur
- Marco Pala, Sylvan Brocard
- article
- IEEE Journal of the Electron Devices Society, 2015, 3 (3), pp.115-121. ⟨10.1109/JEDS.2015.2395719⟩
- titre
- Thermoelectric effects in graphene nanostructures
- auteur
- Philippe Dollfus, Viet Hung Nguyen, Jérôme Saint-Martin
- article
- Journal of Physics: Condensed Matter, 2015, 27 (13), ⟨10.1088/0953-8984/27/13/133204⟩
- titre
- Strain-induced conduction gap in vertical devices made of misoriented graphene layers
- auteur
- V Hung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, P. Dollfus
- article
- Nanotechnology, 2015, 26 (11), ⟨10.1088/0957-4484/26/11/115201⟩
- titre
- Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy
- auteur
- Peng Liu, Frederico Martins, Benoit Hackens, L. Desplanque, Xavier Wallart, Marco Pala, Serge Huant, Vincent Bayot, Hermann Sellier
- article
- Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (7), pp.075313. ⟨10.1103/PhysRevB.91.075313⟩
- titre
- Proposal for a graphene-based all-spin logic gate
- auteur
- Li Su, Weisheng Zhao, Yue Zhang, Damien S Querlioz, Youguang Zhang, Jacques-Olivier Klein, Philippe Dollfus, Arnaud Bournel
- article
- Applied Physics Letters, 2015
- titre
- A computational study of van der Waals tunnel transistors: Fundamental aspects and design challenges
- auteur
- Jiang Cao, Demetrio Logoteta, Sibel Ozkaya, Blanca Biel, Alessandro Cresti, Marco Pala, David Esseni
- article
- 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.12.5.1 - 12.5.4, ⟨10.1109/IEDM.2015.7409684⟩
- titre
- Quantum simulation of tunnel field-effect transistors based on a vertical heterojunction of 2D transition metal dichalcogenides
- auteur
- Jiang Cao, Marco Pala, Alessandro Cresti, David Esseni
- article
- Annual meeting of the GDRi Graphene and Nanotubes, Nov 2015, Aussois, France
- titre
- Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier
- auteur
- Luca Lucci, Jean-Charles Barbé, Marco Pala
- article
- 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.128-131, ⟨10.1109/SISPAD.2015.7292275⟩
- titre
- Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals
- auteur
- Jiang Cao, Marco Pala, Alessandro Cresti, David Esseni
- article
- 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.245-248, ⟨10.1109/ULIS.2015.7063819⟩
- titre
- Enhanced thermoelectric figure of merit in vertical graphene junctions
- auteur
- Viet-Hung Nguyen, Mai Chung Nguyen, Huy-Viet Nguyen, Jérôme Saint-Martin, Philippe Dollfus
- article
- Applied Physics Letters, 2014, 105 (13), ⟨10.1063/1.4896915⟩
- titre
- New insights into self-heating in double-gate transistors by solving Boltzmann transport equations
- auteur
- T. Thu Trang Nghiêm, Jérôme Saint-Martin, P. Dollfus
- article
- Journal of Applied Physics, 2014, 116 (7), ⟨10.1063/1.4893646⟩
- titre
- Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap
- auteur
- Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
- article
- Applied Physics Letters, 2014, 105 (7), ⟨10.1063/1.4893697⟩
- titre
- A Klein-tunneling transistor with ballistic graphene
- auteur
- Quentin Wilmart, Salim Berrada, David Torrin, V Hung Nguyen, Gwendal Fève, Jean-Marc Berroir, Philippe Dollfus, Bernard Plaçais
- article
- 2D Materials, 2014, 1 (1), pp.011006. ⟨10.1088/2053-1583/1/1/011006⟩
- titre
- On the non-linear effects in graphene devices
- auteur
- Viet Hung Nguyen, Alfonso Alarcón, Salim Berrada, Van Nam Do, Jérôme Saint-Martin, Damien Querlioz, Arnaud Bournel, Philippe Dollfus
- article
- Journal of Physics D: Applied Physics, 2014, 47 (9), pp.094007
- titre
- Quantum simulation of a 2-D heterojunction interlayer tunneling field effect transistor
- auteur
- Jiang Cao, Marco Pala, Alessandro Cresti, David Esseni
- article
- 2nd Workshop Graphene in Grenoble, Fondation Nanosciences, Nov 2014, Grenoble, France
- titre
- (Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects
- auteur
- David Esseni, Marco Pala, Revelant A., P. Palestri, M. Li, G. Snider, D. Jena, H.G. Xing
- article
- 226th ECS and SMEQ Joint International Meeting: SiGe,Ge and Related Compounds: Materials, Processing and Devices 6, S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, Oct 2014, Cacun, Mexico
- titre
- Quantum simulation of self-heating effects in rough Si nanowire FETs
- auteur
- Marco Pala, Alessandro Cresti
- article
- 17th International Workshop on Computational Electronics (IWCE 2014), Jun 2014, Paris, France. pp.1-3, ⟨10.1109/IWCE.2014.6865827⟩
- titre
- (Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs
- auteur
- Marco Pala, David Esseni
- article
- 225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing, D. Misra, Y. Obeng, T. Chikyow, H. Iwai, Z. Chen and D. Bauza, May 2014, Orlando, United States
- titre
- Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy
- auteur
- Gustavo Ardila, Anne Kaminski-Cachopo, Marco Pala, Alessandro Cresti, Laurent Montes, Vincent Consonni, Ronan Hinchet, Jerome Michallon, Mehdi Daanoune, Mauro Zanuccoli, Claudio Fiegna, Mireille Mouis
- article
- A. Nazarov; F. Balestra; V. Kilchytska; D. Flandre. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting, Springer International Publishing, pp.223-240, 2014, 978-3-319-08803-7. ⟨10.1007/978-3-319-08804-4_11⟩
- titre
- Nanowire Devices
- auteur
- Gérard Ghibaudo, Sylvain Barraud, Mikaël Cassé, Xin Peng Wang, Guo Qiang Lo, Dim-Lee Kwong, Marco Pala, Zheng Fang
- article
- Ed. by F. Balestra. Beyond‐CMOS Nanodevices 2, Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7. ⟨10.1002/9781118985137.ch2⟩
- titre
- Graphene nanomesh transistor with high on/off ratio and good saturation behavior
- auteur
- Salim Berrada, Viet Hung Nguyen, Damien Querlioz, Jérôme Saint-Martin, Alfonso Alarcón, Christophe Chassat, Arnaud Bournel, Philippe Dollfus
- article
- Applied Physics Letters, 2013, 103 (18), pp.183509
- titre
- Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications
- auteur
- Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Nicolas Wichmann, S. Bollaert, Francois Danneville, Philippe Dollfus
- article
- Solid-State Electronics, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩
- titre
- Decoherence effects in the Wigner function formalism
- auteur
- Philipp Schwaha, Damien Querlioz, Philipp Dollfus, Jérôme Saint-Martin, Mihail Nedjalkov, Siegfried Selberherr
- article
- Journal of Computational Electronics, 2013, 12 (3), pp.388-396
- titre
- Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance
- auteur
- Viet Hung Nguyen, Jérôme Saint-Martin, Damien Querlioz, Fulvio Mazzamuto, Arnaud Bournel, Yann-Michel Niquet, Philippe Dollfus
- article
- Journal of Computational Electronics, 2013, 12 (2), pp.85-93
- titre
- Immunity to Device Variations in a Spiking Neural Network With Memristive Nanodevices
- auteur
- Damien Querlioz, Olivier Bichler, Philippe Dollfus, Christian Gamrat
- article
- IEEE Transactions on Nanotechnology, 2013, 12 (3), pp.288 - 295. ⟨10.1109/TNANO.2013.2250995⟩
- titre
- Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors
- auteur
- Alfonso Alarcón, Viet-Hung Nguyen, Salim Berrada, Damien Querlioz, Jérôme Saint-Martin, Arnaud Bournel, Philippe Dollfus
- article
- IEEE Transactions on Electron Devices, 2013, 60 (3), pp.985-991
- titre
- Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor
- auteur
- Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Philippe Dollfus, Jiongjong Mo, Nicolas Wichmann, L. Desplanque, Xavier Wallart, Francois Danneville, S. Bollaert
- article
- Journal of Nanoscience and Nanotechnology, 2013, 13 (2), pp.771-775
- titre
- Multiscale simulation of carbon nanotube transistors
- auteur
- Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Sylvie Retailleau, Huu Nha Nguyen, Damien Querlioz, Arnaud Bournel, Philippe Dollfus, François Triozon, Yann-Michel Niquet, Stephan Roche
- article
- Solid-State Electronics, 2013, 89, pp.26-67. ⟨10.1016/j.sse.2013.06.013⟩
- titre
- Graphene nanomesh transistor with high on/off ratio and good saturation behavior
- auteur
- Salim Berrada, Viet Hung Nguyen, Damien Querlioz, Jérôme Saint-Martin, Alfonso Alarcón, Christophe Chassat, Arnaud Bournel, Philippe Dollfus
- article
- Applied Physics Letters, 2013, 103 (18), ⟨10.1063/1.4828496⟩
- titre
- A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks
- auteur
- Marco Pala, Hermann Sellier, Benoit Hackens, Frederico Martins, Vincent Bayot, Serge Huant
- article
- Nanoscale Research Letters, 2012, 7, pp.472. ⟨10.1186/1556-276X-7-472⟩
- titre
- Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors
- auteur
- Audrey Valentin, Vincent Talbo, Sylvie Galdin-Retailleau, Philippe Dollfus
- article
- IEEE Transactions on Electron Devices, 2011, 58 (10), pp.3286-3293. ⟨10.1109/TED.2011.2161611⟩
- titre
- A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs
- auteur
- Alessandro Cresti, Marco Pala, Stefano Poli, Mireille Mouis, Gérard Ghibaudo
- article
- IEEE Transactions on Electron Devices, 2011, 58 (8), pp.2274-2281. ⟨10.1109/TED.2011.2147318⟩
- titre
- Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
- auteur
- F. Mazzamuto, V. Hung Nguyen, Y. Apertet, C. Caër, C. Chassat, Jérôme Saint-Martin, P. Dollfus
- article
- Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (23), ⟨10.1103/PhysRevB.83.235426⟩
- titre
- Learning with memristive devices: How should we model their behavior?
- auteur
- Damien Querlioz, Philippe Dollfus, Olivier Bichler, Christian Gamrat
- article
- 2011 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jun 2011, San Diego, United States. ⟨10.1109/NANOARCH.2011.5941497⟩
- titre
- Spin-orbit coupling and phase-coherence in InAs nanowires
- auteur
- Estevez Hernandez S., M. Akabori, K. Sladek, Volk Ch., S. Alagha, H. Hardtdegen, Marco Pala, D. Grützmacher, Schäpers Th.
- article
- Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.235303. ⟨10.1103/PhysRevB.82.235303⟩
- titre
- Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET
- auteur
- Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher
- article
- 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
- titre
- Phonon effect on single-electron transport in two-dot semiconductor devices
- auteur
- Audrey Valentin, Sylvie Galdin-Retailleau, Philippe Dollfus
- article
- Journal of Applied Physics, 2009, 106 (4), pp.044501. ⟨10.1063/1.3186035⟩
- titre
- Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology
- auteur
- Vincent Barral, Thierry Poiroux, Jérôme Saint-Martin, Daniela Munteanu, Jean-Luc Autran, Simon Deleonibus
- article
- IEEE Transactions on Electron Devices, 2009, 56 (3), pp.408-419. ⟨10.1109/TED.2008.2011681⟩
- titre
- Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study
- auteur
- Fulvio Mazzamuto, Jérôme Saint-Martin, Arnaud Bournel, P. Dollfus, Alexandre Archambault, François Marquier, Jean-Jacques Greffet
- article
- Journal of Physics: Conference Series, 2009, 193 (1), pp.012015. ⟨10.1088/1742-6596/193/1/012015⟩
- titre
- 3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
- auteur
- M. Bescond, M. Lannoo, Fabienne Michelini, L. Raymond, Marco Pala
- article
- Microelectronics Journal, 2009, 40, pp.756-758
- titre
- Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs
- auteur
- S. Poli, Marco Pala
- article
- IEEE Electron Device Letters, 2009, 30 (11), pp.1212-1214
- titre
- Study of phonon modes in silicon nanocrystals using the adiabatic bond charge model
- auteur
- Audrey Valentin, Johann Sée, Sylvie Galdin-Retailleau, Philippe Dollfus
- article
- Journal of Physics: Condensed Matter, 2008, 20 (14), pp.145213. ⟨10.1088/0953-8984/20/14/145213⟩
- titre
- On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation
- auteur
- D. Querlioz, Jérôme Saint-Martin, K. Huet, A. Bournel, V. Aubry-Fortuna, C. Chassat, S. Galdin-Retailleau, P. Dollfus
- article
- IEEE Transactions on Electron Devices, 2007, 54 (9), pp.2232 - 2242. ⟨10.1109/TED.2007.902713⟩
- titre
- Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas
- auteur
- Jérôme Saint-Martin, A. Bournel, F Monsef, C. Chassat, P. Dollfus
- article
- Semiconductor Science and Technology, 2006, 21 (4), pp.L29 - L31. ⟨10.1088/0268-1242/21/4/L01⟩
- titre
- Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs
- auteur
- Jérôme Saint-Martin, Damien Querlioz, Arnaud Bournel, Philippe Dollfus
- article
- 2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩
- titre
- ETUDE PAR SIMULATION MONTE CARLO D'ARCHITECTURES DE MOSFET ULTRACOURTS A GRILLE MULTIPLE SUR SOI
- auteur
- Jérôme Saint-Martin
- article
- Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2005. Français. ⟨NNT : ⟩
- titre
- On the Ballistic Transport in Nanometer-Scaled DG MOSFETs
- auteur
- Jérôme Saint-Martin, A. Bournel, P. Dollfus
- article
- IEEE Transactions on Electron Devices, 2004, 51 (7), pp.1148 - 1155. ⟨10.1109/TED.2004.829904⟩