Publications HAL de Joao,Oliveira de la collection AMPERE

Article dans une revue

2023

ref_biblio
Joao Oliveira, Pascal Frey, Hervé Morel, Jean-Michel Reynes, Jérémie Burky, et al.. Failure Degradation Similarities on Power SiC MOSFET Devices Submitted to Short-Circuit Stress and Accelerated Switching Conditions. Microelectronics Reliability, 2023, 148, pp.115166. ⟨10.1016/j.microrel.2023.115166⟩. ⟨hal-04316701⟩
Accès au texte intégral et bibtex
https://hal.science/hal-04316701/file/MICREL_Failure%20Degradation%20Similarities.pdf BibTex

Communication dans un congrès

2021

ref_biblio
Joao Oliveira, Ali Alhoussen, Florent Loiselay, Hervé Morel, Dominique Planson. Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications. EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩. ⟨hal-03260519⟩
Accès au texte intégral et bibtex
https://hal.science/hal-03260519/file/Paper%20EPE%202021%20-%20Joao%20Andre%CC%81%20-%20Final%20Version.pdf BibTex

2020

ref_biblio
Joao Oliveira, Hervé Morel, Dominique Planson, Florent Loiselay. Analysis of Parasitic Elements in Power Modules Based on GaN Components. PCIM Europe 2020, Jul 2020, Nuremberg, Germany. ⟨hal-02945892⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02945892/file/Paper%205764%20%28PCIM2020%29%20%20-%20Joao%20Oliveira.pdf BibTex
ref_biblio
Joao Oliveira, Florent Loiselay, Hervé Morel, Dominique Planson. Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs. EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩. ⟨hal-02945913⟩
Accès au texte intégral et bibtex
https://hal.science/hal-02945913/file/0310_SOARES_DE_OLIVEIRA.pdf BibTex