Publications HAL de Ndembi,IGNOUMBA-IGNOUMBA

Article dans une revue

2026

ref_biblio
Ndembi Ignoumba-Ignoumba, Camille Sonneville, Thomas Kaltsounis, Vishwajeet Maurya, Hala El Rammouz, et al.. Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping. Applied Physics Letters, 2026, 128 (12), ⟨10.1063/5.0325369⟩. ⟨hal-05577908⟩
Accès au texte intégral et bibtex
https://hal.science/hal-05577908/file/manuscript_APL.pdf BibTex

2025

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Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Pierre Brosselard, Eric Frayssinet, et al.. Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications. Power Electronic Devices and Components, 2025, 11, pp.100100. ⟨10.1016/j.pedc.2025.100100⟩. ⟨hal-05099383⟩
Accès au texte intégral et bibtex
https://hal.science/hal-05099383/file/Version%20soumise%20-%20Article%20Ndembi%20PEDC%202024.pdf BibTex

Communication dans un congrès

2025

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Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Mohammed El Amrani, Thibaud Guillemin, et al.. Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterization. ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden. ⟨hal-05097968⟩
Accès au texte intégral et bibtex
https://hal.science/hal-05097968/file/abstract_ICNS.pdf BibTex
ref_biblio
Camille Sonneville, Enora Vuillermet, Ndembi Ignoumba-Ignoumba, Maroun Dagher, Nhan Tran, et al.. Physical and electrical characterization of wide band gap for power electronic application. Société Française de Physique, Jun 2025, Troyes, France. ⟨hal-05097944⟩
Accès au texte intégral et bibtex
https://hal.science/hal-05097944/file/abstract_sfp_sonneville.pdf BibTex

2024

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Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, et al.. Carrier density analysis in stressed n-doped GaN layers on sapphire. GaN Marathon, Jun 2024, Vérone, Italy. ⟨hal-04639487⟩
Accès au texte intégral et bibtex
https://hal.science/hal-04639487/file/Ndembi%20-%20Abstract%20GaN_Marathon_2024.pdf BibTex

Poster de conférence

2024

ref_biblio
Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, et al.. Carrier density analysis in stressed n-doped GaN on sapphire layers. GaN Marathon 2024, Jun 2024, Verona, Italy. 2024. ⟨hal-05054677⟩
Accès au texte intégral et bibtex
https://hal.science/hal-05054677/file/GaN-marathon%20poster%20Vfinale2.pdf BibTex