Publications HAL de Pierre,Brosselard
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Critères : Author : "Pierre,Brosselard", Publication year >= "2009" to "*", Publication type : "('ART_ACL')", Audience : "International"
Nombre d'occurrences trouvées : 28.

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Besar Asllani, Jean Baptiste Fonder, Pascal Bevilacqua, Dominique Planson, Luong Viet Phung, et al.. Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes. Materials Science Forum, Trans Tech Publications Inc., 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩. ⟨hal-01857352⟩
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Besar Asllani, Maxime Berthou, Dominique Tournier, Pierre Brosselard, Phillippe Godignon. Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.741 - 744. ⟨10.4028/www.scientific.net/MSF.858.741⟩. ⟨hal-01646323⟩
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Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantin Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩. ⟨hal-01391852⟩
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Maxime Berthou, Besar Asllani, Pierre Brosselard, Philippe Godignon. Cryogenic to High Temperature Exploration of 4H-SiC W-SBD. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.583-587. ⟨10.4028/www.scientific.net/MSF.821-823.583⟩. ⟨hal-01646326⟩
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Pierre Brosselard, Florian Chevalier, Benjamin Proux, Nicolas Thierry-Jebali, Pascal Bevilacqua, et al.. Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode. Materials Science Forum, Trans Tech Publications Inc., 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩. ⟨hal-02133670⟩
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Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. 2D Electric field imagery in 4H-SiC power diodes using OBIC technique. European Physical Journal: Applied Physics, EDP Sciences, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩. ⟨hal-01387989⟩
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Rémy Ouaida, Maxime Berthou, Javier León, Xavier Perpiñà, Sebastien Oge, et al.. Gate Oxide Degradation of SiC MOSFET in Switching Conditions. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2014, 35 (12), pp.1284 - 1286. ⟨10.1109/LED.2014.2361674⟩. ⟨hal-01154140⟩
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Nicolas Thierry-Jebali, Mihai Lazar, A. Vo-Ha, D. Carole, V. Soulière, et al.. Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts. Materials Science Forum, Trans Tech Publications Inc., 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩. ⟨hal-01987147⟩
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Duy Minh Nguyen, Runhua Huang, Luong Viet Phung, Dominique Planson, Maxime Berthou, et al.. Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.609 - 612. ⟨10.4028/www.scientific.net/MSF.740-742.609⟩. ⟨hal-01627801⟩
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Florian Chevalier, Pierre Brosselard, Dominique Tournier, G. Grosset, L. Dupuy, et al.. Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩. ⟨hal-00803057⟩
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Luong Viet Phung, Dominique Planson, Pierre Brosselard, Dominique Tournier, C. Brylinski. 3D TCAD Simulations for More Efficient SiC Power Devices Design. ECS Transactions, Electrochemical Society, Inc., 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩. ⟨hal-01636483⟩
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A. Vo-Ha, D. Carole, Mihai Lazar, Dominique Tournier, F. Cauwet, et al.. Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport. Thin Solid Films, Elsevier, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩. ⟨hal-01627830⟩
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Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo Ha, Davy Carole, Véronique Soulière, et al.. Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩. ⟨hal-01627792⟩
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N. Thierry-Jebali, A. Vo-Ha, D. Carole, Mihai Lazar, Gabriel Ferro, et al.. Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport. Applied Physics Letters, American Institute of Physics, 2013, 102 (21), ⟨10.1063/1.4809570⟩. ⟨hal-01627796⟩
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Davy Carole, Arthur Vo-Ha, Anthony Thomas, Mihai Lazar, Nicolas Thierry-Jebali, et al.. Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩. ⟨hal-00803058⟩
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Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, et al.. 600 V PiN diodes fabricated using on-axis 4H silicon carbide. Materials Science Forum, Trans Tech Publications Inc., 2012. ⟨hal-02126341⟩
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Nicolas Thierry-Jebali, Jawad Hassan, Mihai Lazar, Dominique Planson, Edwige Bano, et al.. Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes. Applied Physics Letters, American Institute of Physics, 2012, 101 (22), 222111, 4 p. ⟨10.1063/1.4768440⟩. ⟨hal-00769905⟩
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Davy Carole, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, et al.. Buried selective growth of p-doped SiC by VLS epitaxy. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩. ⟨hal-00803061⟩
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Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José Millán. Integration of temperature and current sensors in 4H-SiC VDMOS. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.1093-1096. ⟨10.4028/www.scientific.net/MSF.717-720.1093⟩. ⟨hal-00803062⟩
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Duy Minh Nguyen, Christophe Raynaud, Nicolas Dheilly, Mihai Lazar, Dominique Tournier, et al.. Experimental determination of impact ionization coefficients in 4H-SiC. Diamond and Related Materials, Elsevier, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩. ⟨hal-00661429⟩
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Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. Advanced Materials Research, Trans Tech Publications, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩. ⟨hal-00799902⟩
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Philippe Godignon, Xavier Jordà, Miquel Vellvehi, Xavier Perpina, Viorel Banu, et al.. SiC Schottky diodes for harsh environment space applications. IEEE Transactions on Industrial Electronics, Institute of Electrical and Electronics Engineers, 2011, 58 (7), pp.2582 - 2590. ⟨10.1109/TIE.2010.2080252⟩. ⟨hal-00747617⟩
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Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, et al.. High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer. physica status solidi (a), Wiley, 2010, 207 (9), pp.2088-2092. ⟨10.1002/pssa.201000055⟩. ⟨hal-00739492⟩
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Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, et al.. Extreme dielectric strength in boron doped homoepitaxial diamond. Applied Physics Letters, American Institute of Physics, 2010, 97 (22), pp.223501. ⟨10.1063/1.3520140⟩. ⟨hal-00734714⟩
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Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson. A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT. Materials Science Forum, Trans Tech Publications Inc., 2010, 645-648, pp.1155-1158. ⟨10.4028/WWW.scientific.net/MSF.645-648.1155⟩. ⟨hal-02168907⟩
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Pierre Brosselard, M. Berthou, Xavier Jordà, Philippe Godignon, José Millán. Comparaison de diodes SiC-4H Schottky et bipolaires 3 kV-20 A. European Journal of Electrical Engineering, Lavoisier, 2009, 12 (2), pp.225-236. ⟨10.3166/ejee.12.225-236⟩. ⟨hal-00403379⟩
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Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical beam induced current measurements: principles and applications to SiC device characterization. physica status solidi (a), Wiley, 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩. ⟨hal-00398971⟩
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Christophe Raynaud, Duy Minh Nguyen, Pierre Brosselard, Amador Pérez-Tomás, Dominique Planson, et al.. Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses. Materials Science Forum, Trans Tech Publications Inc., 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩. ⟨hal-00391462⟩