Publications HAL de Pierre,Brosselard
Résultats de la recherche --> Url version détaillée , Url version formatée
Critères : Author : "Pierre,Brosselard", Publication year >= "2009" to "*", Publication type : "('CONF_INV','COMM_ACT')", Audience : "International"
Nombre d'occurrences trouvées : 30.

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Pierre Brosselard, Dominique Planson, D. Tournier, Pascal Bevilacqua, Camille Sonneville, et al.. Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy. ⟨hal-04222211⟩
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Dominique Planson, D. Tournier, Pascal Bevilacqua, Camille Sonneville, Pierre Brosselard, et al.. Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy. ⟨hal-04218429⟩
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Besar Asllani, J B Fonder, Pascal Bevilacqua, Dominique Planson, L. Phung, et al.. Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States. ⟨hal-02132576⟩
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Bertrand Vergne, Sigo Scharnholz, Dominique Planson, Dominique Tournier, Pierre Brosselard. Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors. International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic. ⟨hal-02428642⟩
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Yun Ji Shin, Beatrice Doisneau, Kanaparin Ariyawong, Pierre Brosselard, Didier Chaussende. Experimental investigation of the seeding stage during SiC solution growth using Si and Si - Al solvents. International conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨10.4028/www.scientific.net/MSF.858.81⟩. ⟨hal-02016968⟩
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Dominique Planson, Pierre Brosselard, Karine Isoird, Mihai Lazar, Luong Viêt Phung, et al.. Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects. CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩. ⟨hal-01388002⟩
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Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantinos Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75. ⟨hal-02133681⟩
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Luong Viêt Phung, Dominique Planson, Pierre Brosselard, Dominique Tournier, Christian Brylinski. 3D TCAD Simulations for More Efficient SiC Power Devices Design. Electro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩. ⟨hal-04240572⟩
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Pierre Brosselard, F Chevalier, B Proux, N Thierry-Jebali, Pascal Bevilacqua, et al.. Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode. International Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France. ⟨hal-04022951⟩
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Nicolas Thierry-Jebali, Arthur Vo-Ha, Davy Carole, Mihai Lazar, Gabriel Ferro, et al.. Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport. HeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩. ⟨hal-01391861⟩
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Bertrand Vergne, Gontran Pâques, Claudia Maurer, Sigo Scharnholz, Pierre Brosselard, et al.. PASChAC, système automatisé de caractérisation de composants sur wafer. Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France. ⟨hal-02282734⟩
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Davy Carole, Arthur Vo-Ha, Anthony Thomas, Mihai Lazar, Nicolas Thierry Thierry-Jebali, et al.. Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport. ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p. ⟨hal-04362529⟩
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Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo-Ha, Davy Carole, Véronique Soulière, et al.. Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport. Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p. ⟨hal-04366810⟩
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F Chevalier, G Grosset, L Dupuy, Dominique Tournier, Dominique Planson, et al.. A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET. HETECH, Nov 2012, Barcelone, France. ⟨hal-01113179⟩
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Dominique Planson, Pierre Brosselard, Dominique Tournier, L V Phung, C. Brylinski. Towards Very High Voltage SiC Power Devices. PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩. ⟨hal-02116906⟩
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Florian Chevalier, Pierre Brosselard, D. Tournier, Grégory Grosset, Lionel Dupuy, et al.. Design and characterization of a novel 3.3 kV 4H-SiC JFET. Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p. ⟨hal-04048180⟩
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D M Nguyen, R Huang, L V Phung, Maxime Berthou, P Godignon, et al.. Edge termination design improvements for 10 kV 4H-SiC bipolar diodes. European Conference on Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Pétersbourg, Russia. ⟨hal-03316271⟩
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Florian Chevalier, Pierre Brosselard, Dominique Planson, Dominique Tournier. Conception d'un JFET haute tension à canal latéral et vertical en carbure de silicium. JNRDM2011, May 2011, Paris, France. ⟨hal-01113175⟩
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Davy Carole, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, et al.. Buried selective growth of p-doped SiC by VLS epitaxy. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747294⟩
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Maxime Berthou, Philippe Godignon, Bertrand Vergne, Pierre Brosselard. High temperature capability of high voltage 4H-SiC JBS. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.124-128, ⟨10.4028/www.scientific.net/MSF.711.124⟩. ⟨hal-00747613⟩
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Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD. ⟨hal-00661500⟩
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Craig A. Fischer, Michael R. Jennings, Angus T. Bryant, Amador Pérez-Tomás, Peter M. Gammon, et al.. Physical modelling of 4H-SiC PiN diodes. CSCRM, Sep 2011, Cleveland, United States. pp.993-996, ⟨10.4028/www.scientific.net/MSF.717-720.993⟩. ⟨hal-00747601⟩
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Hervé Peyre, Jianwu Sun, Jude Guelfucci, Sandrine Juillaguet, J. Hassan, et al.. Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications. HeteroSiC & WASMPE 2011, Jun 2011, TOURS, France. pp.164-168, ⟨10.4028/www.scientific.net/MSF.711.164⟩. ⟨hal-00655897⟩
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Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José Millán. Integration of temperature and current sensors in 4H-SiC VDMOS. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747607⟩
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Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, et al.. 600 V PiN diodes fabricated using on-axis 4H silicon carbide. International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩. ⟨hal-00747295⟩
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Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson, Bruno Allard. SiC BJT driver applied to a 2 kW inverter: Performances and limitations. 6th CIPS, Mar 2010, Nuremberg, Germany. ⟨hal-00579223⟩
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Mihai Lazar, Fabrice Enoch, Farah Laariedh, Dominique Planson, Pierre Brosselard. Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State. CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩. ⟨hal-00661443⟩
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Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson. A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT. CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩. ⟨hal-00496976⟩
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Pierre Brosselard, Dominique Tournier, Viorel Banu, Xavier Jordà, Philippe Godignon, et al.. Novel Structures of 3.3kV 4H-SiC BJTs to Reduce the Stacking Faults Expansion. ISPSD, Jun 2009, Barcelone, Spain. à paraître. ⟨hal-00375323⟩
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Viorel Banu, Xavier Jordà, Josep Montserrat, Philippe Godignon, José del R. Millán, et al.. Accelerated Test for Reliability Analysis of SiC Diodes. ISPSD, Jun 2009, Barcelone, Spain. à paraître. ⟨hal-00380318⟩