Publications HAL de Pierre,Brosselard
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Critères : Author : "Pierre,Brosselard", Publication year >= "2009" to "*", Publication type : "('UNDEFINED','REPORT','ART_SCL','COMM_SACT','COVS','OTHER','THESE','autre')"
Nombre d'occurrences trouvées : 59.

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Besar Asllani, Jean Baptiste Fonder, Pascal Bevilacqua, Dominique Planson, Luong Viet Phung, et al.. Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes. Materials Science Forum, Trans Tech Publications Inc., 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩. ⟨hal-01857352⟩
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Besar Asllani, J Fonder, Pascal Bevilacqua, Dominique Planson, L. Phung, et al.. Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States. ⟨hal-02132576⟩
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Philippe Cussac, Cyrille Duchesne, Jean-Baptiste Fonder, Dominique Tournier, Pierre Brosselard, et al.. FilSiC – De l'épitaxie au module de puissance. Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France. ⟨hal-01361598⟩
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Beverley Choucoutou, Luong Viet Phung, Pierre Brosselard, Michel Mermet-Guyennet, Dominique Planson. Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiC. Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France. ⟨hal-01361668⟩
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Besar Asllani, Maxime Berthou, Dominique Tournier, Pierre Brosselard, Phillippe Godignon. Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.741 - 744. ⟨10.4028/www.scientific.net/MSF.858.741⟩. ⟨hal-01646323⟩
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Yun Ji Shin, Beatrice Doisneau, Kanaparin Ariyawong, Pierre Brosselard, Didier Chaussende. Experimental investigation of the seeding stage during SiC solution growth using Si and Si - Al solvents. International conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨10.4028/www.scientific.net/MSF.858.81⟩. ⟨hal-02016968⟩
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Pierre Brosselard, Florian Chevalier, Benjamin Proux, Nicolas Thierry-Jebali, Pascal Bevilacqua, et al.. Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode. Materials Science Forum, Trans Tech Publications Inc., 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩. ⟨hal-02133670⟩
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Bertrand Vergne, Sigo Scharnholz, Dominique Planson, Dominique Tournier, Pierre Brosselard. Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors. International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic. ⟨hal-02428642⟩
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Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantin Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩. ⟨hal-01391852⟩
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Maxime Berthou, Besar Asllani, Pierre Brosselard, Philippe Godignon. Cryogenic to High Temperature Exploration of 4H-SiC W-SBD. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.583-587. ⟨10.4028/www.scientific.net/MSF.821-823.583⟩. ⟨hal-01646326⟩
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Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. 2D Electric field imagery in 4H-SiC power diodes using OBIC technique. European Physical Journal: Applied Physics, EDP Sciences, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩. ⟨hal-01387989⟩
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Rémy Ouaida, Maxime Berthou, Javier León, Xavier Perpiñà, Sebastien Oge, et al.. Gate Oxide Degradation of SiC MOSFET in Switching Conditions. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2014, 35 (12), pp.1284 - 1286. ⟨10.1109/LED.2014.2361674⟩. ⟨hal-01154140⟩
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Dominique Planson, Pierre Brosselard, Karine Isoird, Mihai Lazar, Luong Viêt Phung, et al.. Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects. CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩. ⟨hal-01388002⟩
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Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantinos Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75. ⟨hal-02133681⟩
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Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065307⟩
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Rémy Ouaida, Pierre Brosselard, Pascal Bevilacqua. Etude sur les transistors MOSFETs en Carbure de Silicium - Potentiel d'utilisation dans les Applications Hautes Températures. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065420⟩
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Besar Asllani, Shiqin Niu, Patrick Denis, Maxime Berthou, Dominique Tournier, et al.. Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de silicium. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065193⟩
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Sigo Scharnholz, Luong Viêt Phung, Dominique Tournier, Bertrand Vergne, Ralf Hassdorf, et al.. Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumage. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065352⟩
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Nicolas Thierry-Jebali, Mihai Lazar, A. Vo-Ha, D. Carole, V. Soulière, et al.. Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts. Materials Science Forum, Trans Tech Publications Inc., 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩. ⟨hal-01987147⟩
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A. Vo-Ha, D. Carole, Mihai Lazar, Dominique Tournier, F. Cauwet, et al.. Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport. Thin Solid Films, Elsevier, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩. ⟨hal-01627830⟩
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Luong Viet Phung, Dominique Planson, Pierre Brosselard, Dominique Tournier, C. Brylinski. 3D TCAD Simulations for More Efficient SiC Power Devices Design. ECS Transactions, Electrochemical Society, Inc., 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩. ⟨hal-01636483⟩
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Nicolas Thierry-Jebali, Arthur Vo-Ha, Davy Carole, Mihai Lazar, Gabriel Ferro, et al.. Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport. HeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩. ⟨hal-01391861⟩
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N. Thierry-Jebali, A. Vo-Ha, D. Carole, Mihai Lazar, Gabriel Ferro, et al.. Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport. Applied Physics Letters, American Institute of Physics, 2013, 102 (21), ⟨10.1063/1.4809570⟩. ⟨hal-01627796⟩
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Duy Minh Nguyen, Runhua Huang, Luong Viet Phung, Dominique Planson, Maxime Berthou, et al.. Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.609 - 612. ⟨10.4028/www.scientific.net/MSF.740-742.609⟩. ⟨hal-01627801⟩
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Florian Chevalier, Pierre Brosselard, Dominique Tournier, G. Grosset, L. Dupuy, et al.. Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩. ⟨hal-00803057⟩
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Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo Ha, Davy Carole, Véronique Soulière, et al.. Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩. ⟨hal-01627792⟩
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Davy Carole, Arthur Vo-Ha, Anthony Thomas, Mihai Lazar, Nicolas Thierry-Jebali, et al.. Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩. ⟨hal-00803058⟩
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Florian Chevalier, Pierre Brosselard, Dominique Planson, Pascal Bevilacqua, Grégory Grosset, et al.. A complete methodology for determining the influence of the design for 3.3 kV silicon carbide diodes : JBS compared to Schottky. 2013. ⟨hal-01113181⟩
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Florian Chevalier, Pierre Brosselard, Dominique Planson, Pascal Bevilacqua, Grégory Grosset, et al.. Quality of the ohmic contact on 4H-SiC p + area and its impact on direct conduction and voltage capability. 2013. ⟨hal-01113182⟩
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F Chevalier, G Grosset, L Dupuy, Dominique Tournier, Dominique Planson, et al.. A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET. HETECH, Nov 2012, Barcelone, France. ⟨hal-01113179⟩
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Dominique Planson, Pierre Brosselard, Dominique Tournier, L Phung, C. Brylinski. Towards Very High Voltage SiC Power Devices. PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩. ⟨hal-02116906⟩
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Bertrand Vergne, Gontran Pâques, Claudia Maurer, Sigo Scharnholz, Pierre Brosselard, et al.. PASChAC, système automatisé de caractérisation de composants sur wafer. Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France. ⟨hal-02282734⟩
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Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, et al.. 600 V PiN diodes fabricated using on-axis 4H silicon carbide. Materials Science Forum, Trans Tech Publications Inc., 2012. ⟨hal-02126341⟩
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Nicolas Thierry-Jebali, Jawad Hassan, Mihai Lazar, Dominique Planson, Edwige Bano, et al.. Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes. Applied Physics Letters, American Institute of Physics, 2012, 101 (22), 222111, 4 p. ⟨10.1063/1.4768440⟩. ⟨hal-00769905⟩
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Davy Carole, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, et al.. Buried selective growth of p-doped SiC by VLS epitaxy. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩. ⟨hal-00803061⟩
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Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José Millán. Integration of temperature and current sensors in 4H-SiC VDMOS. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.1093-1096. ⟨10.4028/www.scientific.net/MSF.717-720.1093⟩. ⟨hal-00803062⟩
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Davy Carole, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, et al.. Buried selective growth of p-doped SiC by VLS epitaxy. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747294⟩
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Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, et al.. 600 V PiN diodes fabricated using on-axis 4H silicon carbide. International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩. ⟨hal-00747295⟩
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Maxime Berthou, Philippe Godignon, Pierre Brosselard, Dominique Tournier, José Millán. Integration of temperature and current sensors in 4H-SiC VDMOS. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747607⟩
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Craig Fischer, Michael Jennings, Angus Bryant, Amador Pérez-Tomás, Peter Gammon, et al.. Physical modelling of 4H-SiC PiN diodes. CSCRM, Sep 2011, Cleveland, United States. pp.993-996, ⟨10.4028/www.scientific.net/MSF.717-720.993⟩. ⟨hal-00747601⟩
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Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. Advanced Materials Research, Trans Tech Publications, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩. ⟨hal-00799902⟩
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Philippe Godignon, Xavier Jordà, Miquel Vellvehi, Xavier Perpina, Viorel Banu, et al.. SiC Schottky diodes for harsh environment space applications. IEEE Transactions on Industrial Electronics, Institute of Electrical and Electronics Engineers, 2011, 58 (7), pp.2582 - 2590. ⟨10.1109/TIE.2010.2080252⟩. ⟨hal-00747617⟩
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Maxime Berthou, Philippe Godignon, Bertrand Vergne, Pierre Brosselard. High temperature capability of high voltage 4H-SiC JBS. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.124-128, ⟨10.4028/www.scientific.net/MSF.711.124⟩. ⟨hal-00747613⟩
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Hervé Peyre, Jianwu Sun, Jude Guelfucci, Sandrine Juillaguet, J. Hassan, et al.. Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications. HeteroSiC & WASMPE 2011, Jun 2011, TOURS, France. pp.164-168, ⟨10.4028/www.scientific.net/MSF.711.164⟩. ⟨hal-00655897⟩
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Florian Chevalier, Pierre Brosselard, Dominique Planson, Dominique Tournier. Conception d'un JFET haute tension à canal latéral et vertical en carbure de silicium. JNRDM2011, May 2011, Paris, France. ⟨hal-01113175⟩
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Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD. ⟨hal-00661500⟩
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Duy Minh Nguyen, Christophe Raynaud, Nicolas Dheilly, Mihai Lazar, Dominique Tournier, et al.. Experimental determination of impact ionization coefficients in 4H-SiC. Diamond and Related Materials, Elsevier, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩. ⟨hal-00661429⟩
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Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, et al.. Extreme dielectric strength in boron doped homoepitaxial diamond. Applied Physics Letters, American Institute of Physics, 2010, 97 (22), pp.223501. ⟨10.1063/1.3520140⟩. ⟨hal-00734714⟩
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Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, et al.. High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer. physica status solidi (a), Wiley, 2010, 207 (9), pp.2088-2092. ⟨10.1002/pssa.201000055⟩. ⟨hal-00739492⟩
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Mihai Lazar, Fabrice Enoch, Farah Laariedh, Dominique Planson, Pierre Brosselard. Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State. CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩. ⟨hal-00661443⟩
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Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson. A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT. Materials Science Forum, Trans Tech Publications Inc., 2010, 645-648, pp.1155-1158. ⟨10.4028/WWW.scientific.net/MSF.645-648.1155⟩. ⟨hal-02168907⟩
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Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson, Bruno Allard. SiC BJT driver applied to a 2 kW inverter: Performances and limitations. 6th CIPS, Mar 2010, Nuremberg, Germany. ⟨hal-00579223⟩
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Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson. A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT. CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩. ⟨hal-00496976⟩
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Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical beam induced current measurements: principles and applications to SiC device characterization. physica status solidi (a), Wiley, 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩. ⟨hal-00398971⟩
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Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation. Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009. ⟨hal-00661529⟩
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Pierre Brosselard, Dominique Tournier, Viorel Banu, Xavier Jordà, Philippe Godignon, et al.. Novel Structures of 3.3kV 4H-SiC BJTs to Reduce the Stacking Faults Expansion. ISPSD, Jun 2009, Barcelone, Spain. à paraître. ⟨hal-00375323⟩
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Viorel Banu, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán, et al.. Accelerated Test for Reliability Analysis of SiC Diodes. ISPSD, Jun 2009, Barcelone, Spain. à paraître. ⟨hal-00380318⟩
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Pierre Brosselard, M. Berthou, Xavier Jordà, Philippe Godignon, José Millán. Comparaison de diodes SiC-4H Schottky et bipolaires 3 kV-20 A. European Journal of Electrical Engineering, Lavoisier, 2009, 12 (2), pp.225-236. ⟨10.3166/ejee.12.225-236⟩. ⟨hal-00403379⟩
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Christophe Raynaud, Duy Minh Nguyen, Pierre Brosselard, Amador Pérez-Tomás, Dominique Planson, et al.. Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses. Materials Science Forum, Trans Tech Publications Inc., 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩. ⟨hal-00391462⟩