Publications HAL de antoine,benoist de la collection AMPERE

Communication dans un congrès

2015

ref_biblio
Antoine Benoist, S. Denorme, X. Federspiel, Bruno Allard, P. Candelier. Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology. IRPS, Apr 2015, Monterey CA, United States. pp.GD.3.1-GD.3.5, ⟨10.1109/IRPS.2015.7112804⟩. ⟨hal-02153569⟩
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BibTex

2014

ref_biblio
Antoine Benoist, S. Blonkowski, S. Jeannot, S. Denorme, J. Damiens, et al.. 28nm advanced CMOS resistive RAM solution as embedded non-volatile memory. IRPS, Jun 2014, Waikoloa HI, United States. pp.2E.6.1-2E.6.5, ⟨10.1109/IRPS.2014.6860604⟩. ⟨hal-02153560⟩
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BibTex