Publications HAL de la collection IEMN

2023

Book sections

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Matteo Meneghini, Srabanti Chowdhury, Joff Derluyn, Farid Medjdoub, Dong Ji, et al.. 15. GaN-Based Lateral and Vertical Devices. Massimo Rudan; Rossella Brunetti; Susanna Reggiani. Springer Handbook of Semiconductor Devices, Springer International Publishing, pp.525-578, 2023, Springer Handbooks, ⟨10.1007/978-3-030-79827-7_15⟩. ⟨hal-03875409⟩
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2022

Journal articles

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Kathia Harrouche, Srisaran Venkatachalam, François Grandpierron, Etienne Okada, Farid Medjdoub. Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances. Applied Physics Express, 2022, 15 (11), pp.116504. ⟨10.35848/1882-0786/ac9c46⟩. ⟨hal-03828718⟩
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Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, F Medjdoub, et al.. Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template. Journal of Applied Physics, 2022, 131 (12), pp.124501. ⟨10.1063/5.0077107⟩. ⟨hal-03619060⟩
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Fouzi Haddad, Mustapha Hatti, Khadidja Rahmoun, Katir Ziouche. Selective Surfaces for Photo-Thermal Conversion for Medium Solar Temperature Applications. International Journal of Heat and Technology, 2022, 40 (1), pp.219-224. ⟨10.18280/ijht.400126⟩. ⟨hal-03662793⟩
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Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub. Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors. Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩. ⟨hal-03777891⟩
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Conference papers

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Christian Huber, S. Regensburger, E. Bahat-Treidel, F Medjdoub, Jens Baringhaus. Process challenges and perspectives of vertical GaN power transistors on foreign substrates. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829109⟩
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S Venkatachalam, Kathia Harrouche, François Grandpierron, Stefan Degroote, Marianne Germain, et al.. Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829010⟩
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Jash Mehta, Idriss Abid, Reda Elwaradi, Yvon Cordier, F Medjdoub. AlGaN channel high electron mobility transistors on bulk AlN substrate. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829060⟩
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Elodie Carneiro, Stéphane Rennesson, S. Tamariz, Fabrice Semond, F Medjdoub. Sub-Micron thick Step-Graded AlGaN Buffer on Silicon with a Buffer Breakdown Field Higher Than 6 MV/cm. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829087⟩
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F Medjdoub. Design and fabrication of GaN power devices. IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. ⟨hal-03828862⟩
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Fabrice Semond, Stephanie Rennesson, Sébastian Tamariz, Elodie Carneiro, Jash Mehta, et al.. [Invited] From research to production: how MBE can unlock GaN-on-Si technology. The International Conference on Molecular Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom. ⟨hal-03828770⟩
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Youssef Hamdaoui, Idriss Abid, Katir Ziouche, F Medjdoub. Local substrate removal for next generation GaN-on-Silicon power transistors. 14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022, Aug 2022, Hiroshima, Japan. ⟨hal-03828927⟩
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F Medjdoub. High power-added-efficiency millimeter-wave GaN HEMTs: [Invited]. GaN marathon 2022, Jun 2022, Venice, Italy. ⟨hal-03637096⟩
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Jash Mehta, Idriss Abid, Julien Bassaler, Julien Pernot, Philippe Ferrandis, et al.. Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate. Compound Semiconductor Week, CSW 2022, Jun 2022, Ann Arbor, MI, United States. 2 p. ⟨hal-03828829⟩
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Kathia Harrouche, Sri Saran Vankatachalam, Elodie Carneiro, François Grandpierron, F Medjdoub. Status and progress of millimeter-wave GaN transistors for next generation high-power radar systems: [Invited]. 8th International Conference on Antennas and Electromagnetic Systems, AES 2022, May 2022, Marrakesh, Morocco. ⟨hal-03682395⟩
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F Medjdoub, Jash Mehta, Idriss Abid, Yvon Cordier, Fabrice Semond. AlGaN Channel HEMTs for High Voltage Applications. MRS Spring Meeting & Exhibit, MRS 2022 spring meeting, May 2022, Honolulu (Online), United States. ⟨hal-03637419⟩
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Kathia Harrouche, Sri Saran Vankatachalam, François Grandpierron, Etienne Okada, F Medjdoub. Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V. European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. pp.223, session 5B - B Plasmas & Gas. ⟨hal-03677311⟩
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Idriss Abid, Youssef Hamdaoui, Jash Mehta, F Medjdoub. High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures. European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. ⟨hal-03677266⟩
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Julien Bassaler, Rémi Comyn, C. Bougerol, Yvon Cordier, F Medjdoub, et al.. Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681788⟩
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Reda Elwaradi, C. Bougerol, Jash Mehta, Maud Nemoz, F Medjdoub, et al.. Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681811⟩
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Elodie Carneiro, Stephanie Rennesson, Sébastian Tamariz, Fabrice Semond, F Medjdoub. Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681838⟩
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F Medjdoub. [Webinar] Towards high performance mm-wave GaN power transistors. pCoE - GaN Research and Development (GRAND) Webinar Series, Indian Institute of technology Madras, Apr 2022, Online, India. ⟨hal-03637279⟩
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F Medjdoub. Technological development towards high performance millimeter-wave GaN HEMTs and enhanced reliability. 16th European Microwave Integrated Circuits Conference, EuMIC 2021, EuMIC/EuMC/EuMW, Apr 2022, London, United Kingdom. ⟨hal-03637246⟩
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F Medjdoub. [Workshop] Electronics. Ganex winter school on the physics and applications of nitrides, Labex Ganex, Mar 2022, Autrans, France. ⟨hal-03637118⟩
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Poster communications

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Katir Ziouche, Ibrahim Bel-Hadj, Z. Bougrioua. Heat Fluxmeter in Silicon technology with low thermal resistance. ECT’22, 18th European Thermoelectric Conference, Sep 2022, Barcelona, Spain. ⟨hal-03841126⟩
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Ibrahim Bel-Hadj, Zahia Bougrioua, Katir Ziouche. Fabrication of planar micro-ThermoElectric Generators integrating a 2.5D thermopile topology. ECT’22, 18th European Thermoelectric Conference, Sep 2022, Barcelona, Spain. ⟨hal-03841130⟩
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2021

Journal articles

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Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, et al.. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs. Microelectronics Reliability, 2021, 123, pp.114199. ⟨10.1016/j.microrel.2021.114199⟩. ⟨hal-03287632⟩
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Idriss Abid, Jash Mehta, Yvon Cordier, Joff Derluyn, Stefan Degroote, et al.. AlGaN channel high electron mobility transistors with regrown ohmic contacts. Electronics, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩. ⟨hal-03164517⟩
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Katir Ziouche, Ibrahim Bel-Hadj, Zahia Bougrioua. Thermoelectric properties of nanostructured porous-polysilicon thin films. Nano Energy, 2021, 80, pp.105553. ⟨10.1016/j.nanoen.2020.105553⟩. ⟨hal-02990079⟩
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Idriss Abid, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Kai Cheng, et al.. GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal. Applied Physics Express, 2021, 14 (3), pp.036501. ⟨10.35848/1882-0786/abdca0⟩. ⟨hal-03113165⟩
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Matteo Meneghini, Carlo de Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, et al.. GaN-based power devices: Physics, reliability, and perspectives. Journal of Applied Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩. ⟨hal-03421528⟩
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Conference papers

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Ajay Shanbhag, F Medjdoub, Anjan Chakravorty, Nandita Dasgupta, Amitava Dasgupta. Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs. 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Dec 2021, Monterey, CA, virtual, United States. ⟨10.1109/BCICTS50416.2021.9682203⟩. ⟨hal-03421537⟩
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F Medjdoub. GaN RF and power research at IEMN. C3NiT - Centre Day, Swedish Center for III-Nitride Technology, Nov 2021, Linkoping, Sweden. ⟨hal-03508582⟩
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F Medjdoub. Prospects of ultrawide bandgap materials and devices: [Invited]. International Union of Materials Research Societies - International Conference in Asia 2021, IUMRS-ICA 2021, Session IX - Semiconductor Materials and Devices, Oct 2021, Jeju Island, South Korea. ⟨hal-03359397⟩
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Ekaterina Chikoidze, Amador Perez, Corinne Sartel, Zeyu Chi, Vincent Sallet, et al.. Gallia(Ga2O3): fascinating electronic properties: [Invited]. International Union of Materials Research Societies - International Conference in Asia 2021, IUMRS-ICA 2021, Session MoJ1 - Power Semiconductor Materials and Devices, Oct 2021, Jeju Island, South Korea. ⟨hal-03373733⟩
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Kathia Harrouche, W Rili, Elodie Carneiro, Jash Mehta, Idriss Abid, et al.. Preindustrial GaN devices developed at the nanofabrication center of IEMN: [Invited]. Transducers 2021, Jun 2021, online, France. ⟨hal-03256885⟩
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Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. Above 70% PAE in Q-band with AlN/GaN HEMTs structures. WOCSDICE2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03279173⟩
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Jash Mehta, Idriss Abid, Thi Huong Ngo, Yvon Cordier, F Medjdoub. AlGaN/GaN HEMTs on AlN substrate for power electronics. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom. ⟨hal-03279160⟩
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F Medjdoub. Reliability Oriented Design of GaN Transistor. Material Research Society, Apr 2021, phoenix, United States. ⟨hal-03298846⟩
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Special issue

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F Medjdoub. Special issue on wide bandgap based devices: design, fabrication and applications: [Editorial]. MDPI. Micromachines, 12 (1), MDPI, 2021, Wide bandgap based devices: design, fabrication and applications, ⟨10.3390/mi12010083⟩. ⟨hal-03111514⟩
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Theses

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Idriss Abid. Nouveaux composants électroniques à base du matériau AlN pour les futures applications de puissance. Micro et nanotechnologies/Microélectronique. Université de Lille, 2021. Français. ⟨NNT : 2021LILUI042⟩. ⟨tel-03482762⟩
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2020

Journal articles

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E. Chikoidze, T. Tchelidze, C. Sartel, Z. Chi, R. Kabouche, et al.. Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3. Materials Today Physics, 2020, 15, 100263, 9 p. ⟨10.1016/j.mtphys.2020.100263⟩. ⟨hal-02984814⟩
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Alessandro Caria, Carlo de Santi, Ezgi Dogmus, F Medjdoub, Enrico Zanoni, et al.. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors. Electronics, 2020, 9 (11), pp.1840. ⟨10.3390/electronics9111840⟩. ⟨hal-03028077⟩
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Sven Besendörfer, Elke Meissner, F Medjdoub, Joff Derluyn, Jochen Friedrich, et al.. The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. Scientific Reports, 2020, 10 (1), 17252, 12 p. ⟨10.1038/s41598-020-73977-2⟩. ⟨hal-03028120⟩
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Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Gaudenzio Meneghesso, Idriss Abid, et al.. High breakdown voltage and low buffer trapping in superlattice GaN-on-silicon heterostructures for high voltage applications. Materials, 2020, 13 (19), pp.4271. ⟨10.3390/ma13194271⟩. ⟨hal-03028113⟩
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Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, et al.. Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures. physica status solidi (a), 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩. ⟨hal-02363323⟩
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Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo de Santi, Davide Benazzi, et al.. Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment. Micromachines, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩. ⟨hal-03028138⟩
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S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. Freitas, et al.. Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics, 2020, 127 (1), pp.015701. ⟨10.1063/1.5129248⟩. ⟨hal-02429980⟩
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Katir Ziouche, Ibrahim Bel-Hadj, Zahia Bougrioua. Utilisation du silicium nanostructuré dans un générateur thermoélectrique pour la réduction des pertes thermiques. Entropie : thermodynamique – énergie – environnement – économie, 2020, 1 (1), 10 p. ⟨10.21494/ISTE.OP.2020.0493⟩. ⟨hal-02906722⟩
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Conference papers

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Riad Kabouche, Kathia Harrouche, F Medjdoub. Vers des composants GaN fiables délivrant de haute performance en gamme d'ondes millimétriques: [Invité]. RF & Microwave 2020, 9ème Salon Radiofréquences, Hyperfréquences, Wireless, CEM et Fibre Optique, Sep 2020, Paris, France. ⟨hal-03342668⟩
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Idriss Abid, Riad Kabouche, F Medjdoub, Sven Besendörfer, Elke Meissner, et al.. Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020), Sep 2020, Vienne, Austria. pp.310-312, ⟨10.1109/ISPSD46842.2020.9170170⟩. ⟨hal-03044195⟩
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Tahar Kadi, Marc Duquennoy, Katir Ziouche, Mohammadi Ouaftouh, Nikolay Smagin. Dispersion of IDT-induced high-frequency surface acoustic waves - Application to the mechanical and dimensional characterization of mesoporous silicon. IEEE International Ultrasonics Symposium 2020, IUS2020, Sep 2020, Las Vegas, United States. pp.4, ⟨10.1109/IUS46767.2020.9251563⟩. ⟨hal-03322825⟩
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Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz. IEEE/MTT-S International Microwave Symposium (IMS 2020), Aug 2020, Los Angeles, CA, United States. Session Tu3H - Advances in Microwave Semiconductor Devices, paper Tu3H-2, 285-288, ⟨10.1109/IMS30576.2020.9223971⟩. ⟨hal-03043653⟩
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Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, et al.. Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs. 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2020, Singapour, Singapore. pp.1-6, ⟨10.1109/IPFA49335.2020.9260793⟩. ⟨hal-03043453⟩
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R. Kabouche, K. Harrouche, Etienne Okada, F Medjdoub. Short-term reliability of high performance Q-band AlN/GaN HEMTs. IEEE International Reliability Physics Symposium (IRPS 2020), Apr 2020, Dallas, TX, United States. pp.1-6, ⟨10.1109/IRPS45951.2020.9129322⟩. ⟨hal-03044147⟩
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F Medjdoub. AlN-based power devices: [Invited]. 56th Annual Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2020, Feb 2020, Palm Springs, CA, United States. ⟨hal-03342714⟩
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Book sections

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Kathia Harrouche, F Medjdoub. GaN-based HEMTs for mm-wave applications. Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices, 2020, ISBN 978-3-527-34710-0 ; e-ISBN 978-3-527-82525-7. ⟨hal-03287288⟩
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Other publications

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Markus Behet, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub. Optimising GaN heterostructures for 5G. Compound Semiconductors, 26, 1, 2020. ⟨hal-03342380⟩
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Theses

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Romain Pecheux. Optimisation de la technologie GaN pour l’amplification de puissance en bande Ku spécifique aux applications senseurs aéroportés. Micro et nanotechnologies/Microélectronique. Université de Lille, 2020. Français. ⟨NNT : 2020LILUI034⟩. ⟨tel-03623262⟩
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2019

Journal articles

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Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cédric Masante, et al.. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates. Micromachines, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩. ⟨hal-02344992⟩
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Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, V Gao Zhan, Carlo de Santi, et al.. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. Microelectronics Reliability, 2019, 100-101, pp.113388. ⟨10.1016/j.microrel.2019.06.080⟩. ⟨hal-02356749⟩
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https://hal.archives-ouvertes.fr/hal-02356749/file/MR_2019_IEMN.pdf BibTex
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Georges Pavlidis, Samuel Kim, Idriss Abid, Malek Zegaoui, F Medjdoub, et al.. The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs. IEEE Electron Device Letters, 2019, 40 (7), pp.1060-1063. ⟨10.1109/LED.2019.2915984⟩. ⟨hal-02356736⟩
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Riad Kabouche, Romain Pecheux, Kathia Harrouche, Etienne Okada, F Medjdoub, et al.. High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation. International Journal of High Speed Electronics and Systems, 2019, 28 (01n02), pp.1940003. ⟨10.1142/S0129156419400032⟩. ⟨hal-02356733⟩
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ref_biblio
M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, et al.. Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩
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ref_biblio
Jun Lu, Jr-Tai Chen, Martin Dahlqvist, Riad Kabouche, F Medjdoub, et al.. Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors. Applied Physics Letters, 2019, 115 (22), pp.221601. ⟨10.1063/1.5123374⟩. ⟨hal-02400602⟩
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Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, et al.. Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability, 2019, 100-101, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩. ⟨hal-02356751⟩
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Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation. IEEE Journal of the Electron Devices Society, 2019, 7, pp.1145-1150. ⟨10.1109/JEDS.2019.2952314⟩. ⟨hal-02357492⟩
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Conference papers

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Kamel Haddadi, Christophe Loyez, Katir Ziouche. Six-port technology for millimeter-wave metrology. 6th IEEE-Antennas-and-Propagation-Society (IEEE AP-S) Topical Meeting on Antenna Measurements & Applications (CAMA), Oct 2019, Bali, Indonesia. pp.81-84, ⟨10.1109/CAMA47423.2019.8959806⟩. ⟨hal-03224646⟩
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Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, Veronica Gao Zhan, Carlo de Santi, et al.. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048726⟩
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https://hal.archives-ouvertes.fr/hal-03048726/file/ESREF_2019_VF.pdf BibTex
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Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, et al.. Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048194⟩
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https://hal.archives-ouvertes.fr/hal-03048194/file/ESREF_2019_Borga_rev3.pdf BibTex
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F Medjdoub. GaN integration on silicon for high power devices. European Materials Research Society (E-MRS) Fall 2019, Sep 2019, Warsaw, Poland. ⟨hal-03287384⟩
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Riad Kabouche, Idriss Abid, Malek Zegaoui, Roland Püsche, Joff Derluyn, et al.. Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287421⟩
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F Medjdoub. Towards higher voltage in III-Nitride devices. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287436⟩
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S Besendörfer, E Meissner, F Medjdoub. Direct observation of V-pit induced vertical n-type columns disrupting vertical breakdown of AlGaN/GaN-HEMT heterostructures on Si. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287411⟩
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Idriss Abid, Riad Kabouche, Malek Zegaoui, C. Bougerol, Rémi Comyn, et al.. Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287398⟩
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Carlo de Santi, Alessandro Caria, N Renso, Ezgi Dogmus, Malek Zegaoui, et al.. Photon-driven degradation processes in GaN-based optoelectronic devices. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287430⟩
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Matteo Borga, Matteo Meneghini, Davide Benazzi, Roland Püsche, Joff Derluyn, et al.. GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356883⟩
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K. Harrouche, Riad Kabouche, Malek Zegaoui, F Medjdoub. Scaling of AlN/GaN HEMT for millimeter-wave power applications. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356889⟩
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Idriss Abid, Riad Kabouche, Malek Zegaoui, C. Bougerol, Rémi Comyn, et al.. AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356886⟩
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Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Riad Kabouche, Idriss Abid, et al.. Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356881⟩
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https://hal.archives-ouvertes.fr/hal-02356881/file/Wocsdice_abs_final.pdf BibTex
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Katir Ziouche, Ibrahim Bel-Hadj, Z. Bougrioua. Optimisation de la collecte de chaleur d'un microgénérateur thermoélectrique planaire. CIFQ2019, 14° Colloque Int. Franco-Québécois en Energie, Jun 2019, Baie St-Paut, Canada. proceedings, ART-055, pp. 1-6. ⟨hal-02414536⟩
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Ibrahim Bel-Hadj, Z. Bougrioua, Katir Ziouche. Modélisation et optimisation de la structure géométrique d'un microgénérateur thermoélectrique planaire. TELECOM'2019 & 11èmes JFMMA, Jun 2019, Saidia, Maroc. ⟨hal-02414487⟩
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Riad Kabouche, Idriss Abid, Malek Zegaoui, Kai Cheng, F Medjdoub. Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States. ⟨hal-02356891⟩
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Poster communications

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Zahia Bougrioua, Ibrahim Bel-Hadj, Katir Ziouche. Optimizing heat harvesting in a membrane based planar µTEG: modelling and fabrication, & vice versa. ECT 2019 – 17th European Conference on Thermoelectrics, Sep 2019, Limassol, Cyprus. . ⟨hal-02906736⟩
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https://hal.archives-ouvertes.fr/hal-02906736/file/ECT2019%2C%20ZB%2C%20Optimizing%20heat%20harvesting%20in%20a%20membrane%20based%20planar%20%C2%B5TEG%20modelling%2C%20fab%C2%B0%20%26%20vice%20versa.pdf BibTex

2018

Journal articles

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Stéphanie Rennesson, Mathieu Leroux, Mohamed Al Khalfioui, Maud Nemoz, Sebastien Chenot, et al.. Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE. physica status solidi (a), 2018, 215 (9), pp.1700640. ⟨10.1002/pssa.201700640⟩. ⟨hal-02322484⟩
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Ezgi Dogmus, Malek Zegaoui, F Medjdoub. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap. Applied Physics Express, 2018, 11 (3), pp.034102. ⟨10.7567/APEX.11.034102⟩. ⟨hal-02356739⟩
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https://hal.archives-ouvertes.fr/hal-02356739/file/Dogmus_2018_Appl._Phys._Express_11_034102.pdf BibTex
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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, et al.. GaN-Based Laser Wireless Power Transfer System. Materials, 2018, 11 (1), pp.153. ⟨10.3390/ma11010153⟩. ⟨hal-02356738⟩
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https://hal.archives-ouvertes.fr/hal-02356738/file/materials-11-00153.pdf BibTex
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Carlo de Santi, Alessandro Caria, Nicola Renso, Ezgi Dogmus, Malek Zegaoui, et al.. Evidence of optically induced degradation in gallium nitride optoelectronic devices. Applied Physics Express, 2018, 11 (11), pp.111002. ⟨10.7567/APEX.11.111002⟩. ⟨hal-02356737⟩
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https://hal.archives-ouvertes.fr/hal-02356737/file/APL%202018%20Optically-induced%20degradation%20rev4.pdf BibTex
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Souheyla Fakiri, Alex Montagne, Khadidja Rahmoun, Alain Iost, Katir Ziouche. Mechanical properties of porous silicon and oxidized porous silicon by nanoindentation technique. Materials Science and Engineering: A, 2018, 711, pp.470-475. ⟨10.1016/j.msea.2017.11.013⟩. ⟨hal-03183489⟩
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Conference papers

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Idriss Abid, Riad Kabouche, Malek Zegaoui, F Medjdoub. Next generation of GaN-on-Silicon power devices. 4th IEEE International Conference on Emerging Electronics, Dec 2018, Bengaluru, India. ⟨hal-03287820⟩
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R Pecheux, Riad Kabouche, Malek Zegaoui, J T Chen, O Kordina, et al.. First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects. International Workshop on Nitride Semiconductors, IWN 2018, Nov 2018, Kanazawa, Japan. ⟨hal-03288139⟩
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Alaleh Tajalli, Idriss Abid, Riad Kabouche, Malek Zegaoui, Matteo Meneghini, et al.. High voltage GaN-on-silicon with low-trapping up to 1200 V. International Workshop on Nitride Semiconductors, Nov 2018, Kanazawa, Japan. ⟨hal-03288133⟩
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R Pecheux, Riad Kabouche, Malek Zegaoui, F Medjdoub. Novel heterostructures for millimeter-wave GaN devices. Asia-Pacific Microwave Conference (APMC), Nov 2018, kyoto, Japan. ⟨hal-03287819⟩
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Romain Pécheux, Riad Kabouche, Malek Zegaoui, J T Chen, O Kordina, et al.. GaN-based transistors using buffer-free heterostructures for next generation RF devices. 9th Wide Band Gap Semiconductor and Components Workshop, Oct 2018, Harwell, Ireland. ⟨hal-02356908⟩
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Riad Kabouche, Joff Derluyn, Roland Püsche, Stefan Degroote, Marianne Germain, et al.. Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.5-8, ⟨10.23919/EuMIC.2018.8539962⟩. ⟨hal-02356753⟩
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Mohamed Bouslama, Ahmad Al Hajjar, Raphaël Sommet, Jean-Christophe Nallatamby, F Medjdoub. Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.333-336, ⟨10.23919/EuMIC.2018.8539941⟩. ⟨hal-02356757⟩
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https://hal.archives-ouvertes.fr/hal-02356757/file/EUMW_2018_trap_model_paper.pdf BibTex
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Alaleh Tajalli, Idriss Abid, Riad Kabouche, Malek Zegaoui, Matteo Meneghini, et al.. Towards low-trapping GaN-on-silicon material system for 1200 V applications. European Material Research Society Fall 2018, Sep 2018, Warsaw, Poland. ⟨hal-03287736⟩
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Farah Bouazzaoui, Marie Pierre Chauvat, Magali Morales, Malek Zegaoui, F Medjdoub, et al.. Optimized ohmic contacts for InAlGaN/GaN HEMTs. International Symposium on Growth of III-Nitrides, Aug 2018, Warsaw, Poland. ⟨hal-03287822⟩
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Romain Pécheux, Riad Kabouche, Etienne Okada, Malek Zegaoui, F Medjdoub. C-doped AlN/GaN HEMTs for High efficiency mmW applications. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2018), Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430021⟩. ⟨hal-02356756⟩
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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, et al.. Degradation of InGaN-based optoelectronic devices under electrical and optical stress. 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE), Jun 2018, Naples, Italy. ⟨hal-03288175⟩
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Romain Pécheux, Guillaume Ducournau, Riad Kabouche, Etienne Okada, Christian Mondolot, et al.. Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band. 16èmes Journées Nano, Micro, et Optoélectronique, JNMO 2018, Jun 2018, Agay, France. ⟨hal-02356912⟩
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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, et al.. Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices. COMPOUND SEMICONDUCTOR WEEK 2018, May 2018, Cambridge, United States. ⟨hal-03287725⟩
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Riad Kabouche, Romain Pecheux, Léna Chenu, Tommy Defais, Zegaoui Malek, et al.. GaN HEMTs for millimeter-wave applications: Status and Challenges. Microwave and Millimeter-wave GaN - Wafer to IC Workshop, Apr 2018, Cardiff, United Kingdom. ⟨hal-03287821⟩
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Riad Kabouche, Romain Pecheux, Zegaoui Malek, F Medjdoub. Current status and challenges of GaN millimeter-wave transistors: [Invited]. GaN Marathon 2.0, Apr 2018, Padova, Italy. ⟨hal-03287817⟩
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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, et al.. Degradation processes and origin in InGaN-based high-power photodetectors. Gallium Nitride Materials and Devices XIII, Jan 2018, San Francisco, United States. pp.54, ⟨10.1117/12.2289466⟩. ⟨hal-02356755⟩
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Other publications

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Gaudenzio Meneghesso, Joff Derluyn, Elke Meissner, F Medjdoub, Abhishek Banerjee, et al.. Pushing the limits of GaN-based power devices and power electronics. 2018, pp.52-55. ⟨hal-03287707⟩
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https://hal.archives-ouvertes.fr/hal-03287707/file/Bodos_Power_2018_08.pdf BibTex

2017

Journal articles

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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, et al.. Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. Microelectronics Reliability, 2017, 76-77, pp.575-578. ⟨10.1016/j.microrel.2017.06.072⟩. ⟨hal-03028379⟩
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Ezgi Dogmus, Riad Kabouche, Astrid Linge, Etienne Okada, Malek Zegaoui, et al.. High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs. physica status solidi (a), 2017, 214 (8), pp.1600797. ⟨10.1002/pssa.201600797⟩. ⟨hal-03028465⟩
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Riad Kabouche, Etienne Okada, Ezgi Dogmus, Astrid Linge, Malek Zegaoui, et al.. Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band. IEEE Microwave and Wireless Components Letters, 2017, 27 (4), pp.419-421. ⟨10.1109/LMWC.2017.2678424⟩. ⟨hal-03028333⟩
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Katir Ziouche, Zheng Yuan, Pascale Lejeune, Tuami Lasri, Didier Leclercq, et al.. Silicon-Based Monolithic Planar Micro Thermoelectric Generator Using Bonding Technology. Journal of Microelectromechanical Systems, 2017, 26 (1), pp.45-47. ⟨10.1109/JMEMS.2016.2633442⟩. ⟨hal-02906726⟩
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Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, et al.. Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs. IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩
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https://hal.archives-ouvertes.fr/hal-01560627/file/2017_IEEE-TD_0018-9383_Rzin.pdf BibTex

Conference papers

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Romain Pécheux, Riad Kabouche, Tommy Defais, Ezgi Dogmus, Zegaoui Malek, et al.. Key features for high efficiency and highly robust mmW GaN HEMTs: [Invited]. XIX International Workshop on the Physics of Semiconductor Devices, IWPSD 2017, Dec 2017, Delhi, India. ⟨hal-03298880⟩
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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, et al.. Degradation of InGaN-based MQW photodetectors under 405 nm laser excitation. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis 2017, Sep 2017, Bordeaux, France. ⟨hal-03298875⟩
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Romain Pécheux, Riad Kabouche, Ezgi Dogmus, Astrid Linge, Etienne Okada, et al.. Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Sep 2017, Leuven, Belgium. pp.228-231, ⟨10.1109/ESSDERC.2017.8066633⟩. ⟨hal-03028460⟩
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Ezgi Dogmus, Malek Zegaoui, F Medjdoub. GaN-on-Silicon transistors with extremely low off-state leakage current above 3 kilovolts: [Invited]. TWHM 2017(12th Topical Workshop on Heterostructure Microelectronics), Aug 2017, Kirishima, Japan. ⟨hal-03298882⟩
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C de Santi, M Meneghini, A Caria, Ezgi Dogmus, Malek Zegaoui, et al.. Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities. 12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298878⟩
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Stephanie Rennesson, Fabrice Semond, M. Nemoz, Jeans Massies, Stéphane Chenot, et al.. AlN-based HEMTs grown on silicon substrate by NH3-MBE. 12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298877⟩
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Ezgi Dogmus, Astrid Linge, Malek Zegaoui, F Medjdoub. Substrate grounded GaN-on-Si HEMTs with record vertical breakdown above 2 kV. 12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298876⟩
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Mehdi Rzin, Bruno Guillet, Laurence Méchin, Piero Gamarra, Cédric Lacam, et al.. Low Frequency Noise in In-Situ SiN Passivated InAlGaN/GaN HEMTs. ICNF 2017 (24th International Conference on Noise and Fluctuations), Jun 2017, Vilnius, Lithuania. ⟨hal-02523201⟩
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R Pecheux, Riad Kabouche, Ezgi Dogmus, A Linge, Malek Zegaoui, et al.. Low RF losses up to 110 GHz in GaN-on-silicon HEMTs. Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE2017, May 2017, Las Palmas de Gran Canaria, Spain. ⟨hal-03298883⟩
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F Medjdoub. Millimeter-wave high power GaN transistors: the race for better efficiency: [Invited]. Millimeter-wave high power GaN transistors: the race for better efficiency, May 2017, Turin, Italy. ⟨hal-03298881⟩
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Ahmad Al Hajjar, Julien Couvidat, Jean-Christophe Nallatamby, Raymond Quéré, F Medjdoub. Caractérisation et modélisation non-linéaire du HEMT AlN/GaN sur substrat silicium et validation par mesure Load-Pull. 20èmes Journées Nationales Microondes, May 2017, Saint-Malo, France. ⟨hal-01661775⟩
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https://hal.archives-ouvertes.fr/hal-01661775/file/JNM2017Ahmadversionfinal.pdf BibTex
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Stephanie Rennesson, Fabrice Semond, Maud Nemoz, Jean Massies, Sebastien Chenot, et al.. Towards the ultimate goal of AlN-based HEMTs grown on silicon substrates. Compound Semiconductor Week 2017, May 2017, Berlin, Germany. ⟨hal-03298872⟩
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Carlo de Santi, Matteo Meneghini, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, et al.. Degradation of InGaN-based solar cells under monochromatic photoexcitation. Compound Semiconductor Week 2017, May 2017, Berlin, Germany. ⟨hal-03298873⟩
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2016

Journal articles

ref_biblio
Ezgi Dogmus, Riad Kabouche, Sylvie Lepilliet, Astrid Linge, Malek Zegaoui, et al.. InAlGaN/GaN HEMTs at Cryogenic Temperatures. Electronics, 2016, 5 (2), pp.31. ⟨10.3390/electronics5020031⟩. ⟨hal-03028345⟩
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Katir Ziouche, Pascale Lejeune, Zahia Bougrioua, Didier Leclercq. Dispersion of Heat Flux Sensors Manufactured in Silicon Technology. Sensors, 2016, 16 (6), pp.853. ⟨10.3390/s16060853⟩. ⟨hal-02906729⟩
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N. K. Subramani, A. K. Sahoo, Jean-Christophe Nallatamby, R. Sommet, N. Rolland, et al.. Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements. IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (5), pp.1351-1358. ⟨10.1109/TMTT.2016.2549528⟩. ⟨hal-01394908⟩
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F Medjdoub, Riad Kabouche, Ezgi Dogmus, Astrid Linge, Malek Zegaoui. High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs. Electronics, 2016, 5 (1), pp.12. ⟨10.3390/electronics5010012⟩. ⟨hal-03028337⟩
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Nitin Goyal, Srujana Dusari, Jochen Bardong, F Medjdoub, Andreas Kenda, et al.. Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600°C ambient air. Solid-State Electronics, 2016, 116, pp.107-110. ⟨10.1016/j.sse.2015.12.002⟩. ⟨hal-03028357⟩
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Nicolas Herbecq, Isabelle Roch-Jeune, Astrid Linge, Malek Zegaoui, Pierre-Olivier Jeannin, et al.. Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors. physica status solidi (a), 2016, 213 (4), pp.873--877. ⟨10.1002/pssa.201532572⟩. ⟨hal-02277752⟩
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Conference papers

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Souheyla Fakiri, Alain Iost, Alex Montagne, Khadija Rahmoun, Katir Ziouche. Caracterisations mecaniques par procede de nanoindentation de couches de silicium poreux nanostructurees. INDENTATION, Oct 2016, Lille, France. ⟨hal-01485136⟩
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Georges Pavlidis, David Mele, Ting Cheng, F Medjdoub, Samuel Graham. The thermal effects of substrate removal on GaN HEMTs using Raman Thermometry. 2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), May 2016, Las Vegas, Nevada, United States. pp.1255-1260, ⟨10.1109/ITHERM.2016.7517691⟩. ⟨hal-03028471⟩
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A.K. Sahoo, N.K. Subramani, Jean-Christophe Nallatamby, Raphaël Sommet, R Quéré, et al.. Thermal Analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC Substrate through TCAD Simulations and Measurements. Proceedings of the 46st European Microwave Conference, EuMW 2016, 2016, London, UK, United Kingdom. pp. ⟨hal-01395028⟩
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Poster communications

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Zahia Bougrioua, Pascale Lejeune, Didier Leclercq, Katir Ziouche. Performance of planar μTEG as a function of polySi properties and device membrane-based topology. ECT-2016 - 14th European Conference on Thermoelectrics, Sep 2016, Lisbonne, Portugal. ⟨hal-02906738⟩
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Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Ezgi Dogmus, et al.. Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs . EMRS Fall Meeting, Sep 2016, Varsovie, Poland. ⟨hal-01641574⟩
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2015

Journal articles

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F Medjdoub, Malek Zegaoui, Astrid Linge, B. Grimbert, Riccardo Silvestri, et al.. High PAE high reliability AlN/GaN double heterostructure. Solid-State Electronics, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩. ⟨hal-03028370⟩
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A.K. Sahoo, N.K. Subramani, Jean-Christophe Nallatamby, L. Sylvain, Christophe Loyez, et al.. Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism. Solid-State Electronics, 2015. ⟨hal-01285677⟩
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F Medjdoub, Riad Kabouche, Astrid Linge, Bertrand Grimbert, Malek Zegaoui, et al.. High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure. Applied Physics Express, 2015, 8 (10), pp.101001. ⟨10.7567/APEX.8.101001⟩. ⟨hal-03028367⟩
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Malek Zegaoui, Nicolas Herbecq, Astrid Linge, B. Grimbert, F Medjdoub, et al.. GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV. Electronics Letters, 2015, 51 (19), pp.1532-1534. ⟨10.1049/el.2015.1684⟩. ⟨hal-03028365⟩
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K. Ziouche, Z. Bougrioua, P. Lejeune, T. Lasri, Didier Leclercq. Probing technique for localized thermal conductivity measurement. Measurement Science and Technology, 2015, 26 (8), pp.087003. ⟨10.1088/0957-0233/26/8/087003⟩. ⟨hal-02906730⟩
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Ezgi Dogmus, Malek Zegaoui, Ludovic Largeau, Maria Tchernycheva, Vladimir Neplokh, et al.. High structural quality InGaN/GaN multiple quantum well solar cells. physica status solidi (c), 2015, ⟨10.1002/pssc.201510137⟩. ⟨hal-01230121⟩
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Zheng Yuan, Katir Ziouche, Zahia Bougrioua, Pascale Lejeune, Tuami Lasri, et al.. A planar micro thermoelectric generator with high thermal resistance. Sensors and Actuators A: Physical , 2015, 221, pp.67-76. ⟨10.1016/j.sna.2014.10.026⟩. ⟨hal-02906732⟩
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Conference papers

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F Medjdoub, Nicolas Herbecq, Astrid Linge, Malek Zegaoui. High frequency high breakdown voltage GaN transistors. 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.9.2.1-9.2.4, ⟨10.1109/IEDM.2015.7409660⟩. ⟨hal-03028447⟩
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A.K. Sahoo, N.K. Subramani, Jean-Christophe Nallatamby, N. Rolland, Raymond Quéré, et al.. Temperature dependent contact and channel sheet resistance extraction of GaN HEMT.. INMMIC, Oct 2015, Taormina, Italy. ⟨hal-01285706⟩
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2014

Journal articles

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Katir Ziouche, G. Savelli, Zahia Bougrioua, D. Hauser, P. Lejeune, et al.. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice. Journal of Applied Physics, 2014, 116 (4), 043701, 7 p. ⟨10.1063/1.4891020⟩. ⟨hal-01055042⟩
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Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, et al.. 1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal. Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩
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F Medjdoub. [Invited] Ultrathin barrier GaN-on-silicon devices for millimeter wave applications. Microelectronics Reliability, 2014, 54, pp.1-12. ⟨10.1016/j.microrel.2013.11.009⟩. ⟨hal-00923934⟩
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Conference papers

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F Medjdoub, Etienne Okada, B. Grimbert, D. Ducatteau, R. Silvestri, et al.. High performance high reliability AlN/GaN DHFET. ESSDERC 2014 - 44th European Solid State Device Research Conference, Sep 2014, Venice Lido, Italy. pp.146-149, ⟨10.1109/ESSDERC.2014.6948779⟩. ⟨hal-03028482⟩
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Ezgi Dogmus, Ludovic Largeau, Natalie Rolland, F Medjdoub. Characterization of InxGa1-xN/GaN MQWs heterostructures for solar cells applications. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018409⟩
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Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub. High polarization high breakdown voltage AlN/GaN-on-silicon transistors. 38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014, 2014, Delphi, Greece. 2 p. ⟨hal-01006455⟩
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Ezgi Dogmus, Ludovic Largeau, Nathalie Rolland, F Medjdoub. InxGa1-xN/GaN MQWs heterostructures for solar cells applications. 38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014, 2014, Delphi, Greece. 2 p. ⟨hal-01006446⟩
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Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub. Combinaison d'une polarisation élevée et d'une forte tenue en tension pour les transistors AlN/GaN sur Si. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01018416⟩
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Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub. Pushing the limits of GaN-on-silicon device breakdown voltage for high power applications. CMOS Emerging Technologies Research Symposium, 2014, Grenoble, France. ⟨hal-00976633⟩
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2013

Journal articles

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G. Meneghesso, M. Meneghini, F Medjdoub, Y. Tagro, B. Grimbert, et al.. First reliability demonstration of sub-200 nm AlN/GaN-on-silicon double heterostructure HEMTs for Ka band applications. IEEE Transactions on Device and Materials Reliability, 2013, 13, pp.480-488. ⟨10.1109/TDMR.2013.2276425⟩. ⟨hal-00913577⟩
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F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland. Toward highly scaled AlN/GaN-on-silicon devices for millimeter wave applications. International Journal of Microwave and Wireless Technologies, 2013, 5, pp.335-340. ⟨10.1017/S1759078713000342⟩. ⟨hal-00871899⟩
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F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland. Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices. Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩
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Conference papers

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F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland, et al.. Highly stable low noise/high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz. IEEE International Reliability Physics Symposium, IRPS 2013, 2013, Monterey, CA, United States. paper 3C.3, 6 p., ⟨10.1109/IRPS.2013.6531985⟩. ⟨hal-00877718⟩
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I. Dogmus, A. Addad, C. Lethien, P. Roussel, El Hadj Dogheche, et al.. Characterization of InxGa1-xN/GaN heterostructures for x~0.30 and x~0.55 by XRD and TEM methods. 3èmes Journées Nationales sur la Récupération et le Stockage d'Energie pour l'Alimentation des Microsystèmes Autonomes, JNRSE 2013, 2013, Toulouse, France. 2 p. ⟨hal-00878378⟩
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F Medjdoub. Progress in the development of (In)AlN/GaN heterostructure for next generation mmW applications. 61st IEEE MTT-S International Microwave Symposium, IMS 2013, Workshop WMA : Advancements in InAlN/Gan Device and Microwave/MMW Circuit Technology, 2013, Seattle, WA, United States. ⟨hal-00811764⟩
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2012

Journal articles

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F Medjdoub, Yoann Tagro, Malek Zegaoui, B. Grimbert, Francois Danneville, et al.. Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz. IEEE Electron Device Letters, 2012, 33 (9), pp.1258-1260. ⟨10.1109/LED.2012.2205215⟩. ⟨hal-00786956⟩
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F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, et al.. First demonstration of high-power GaN-on-silicon transistors at 40 GHz. IEEE Electron Device Letters, 2012, 33 (8), pp.1168-1170. ⟨10.1109/LED.2012.2198192⟩. ⟨hal-00786912⟩
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C. Sion, P. Godts, K. Ziouche, Z. Bougrioua, T. Lasri, et al.. Unpackaged infrared thermoelectric microsensor realized on suspended membrane by silicon technology. Sensors and Actuators A: Physical , 2012, 175, pp.78-86. ⟨10.1016/j.sna.2011.12.051⟩. ⟨hal-00788268⟩
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F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, et al.. Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors. Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩
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Conference papers

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F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, et al.. Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications. 7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩
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F Medjdoub, Malek Zegaoui, B. Grimbert, Y. Tagro, Damien Ducatteau, et al.. High performance GaN on Si transistors up to 40 GHz. 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, May 2012, Porquerolles, France. ⟨hal-00797334⟩
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F Medjdoub. [Invited] Can we achieve high power GaN-on-Si in the mmW range ?. 48th Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2012, 2012, Napa Valley, CA, United States. ⟨hal-00797332⟩
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F Medjdoub, Malek Zegaoui, Y. Tagro, B. Grimbert, Damien Ducatteau, et al.. AlN/GaN-on-silicon devices for millimeter wave high power/low noise applications. 6th Space Agency - MOD Workshop on Wideband Gap Semiconductors and Components, 2012, Noordwijk, Netherlands. pp.CD-ROM, 1-8. ⟨hal-00801061⟩
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Book sections

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F Medjdoub. Transistors à base de semi-conducteurs III-N sur substrat de silicium et applications. Techniques de l'Ingénieur, TI Sciences et Techniques, Paris, France, dossier IN146, 14 p., 2012. ⟨hal-00798938⟩
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2011

Journal articles

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F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, et al.. Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon. Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩
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F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland. Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate. Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩. ⟨hal-00603008⟩
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G. Scheen, K. Ziouche, Z. Bougrioua, P. Godts, D. Leclercq, et al.. Simultaneous fabrication of superhydrophobic and superhydrophilic polyimide surfaces with low hysteresis. Langmuir, 2011, 27, pp.6490-6495. ⟨10.1021/la1050805⟩. ⟨hal-00597097⟩
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F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, et al.. Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate. IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩
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F Medjdoub, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland. Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors. Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (12), pp.124101-1-3. ⟨10.1143/APEX.4.124101⟩. ⟨hal-00783378⟩
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F Medjdoub, Malek Zegaoui, N. Rolland. Beyond 100 GHz AlN/GaN HEMTs on silicon substrate. Electronics Letters, 2011, 47 (24), pp.1345-1346. ⟨10.1049/el.2011.3166⟩. ⟨hal-00783379⟩
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F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland. High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate. IEEE Electron Device Letters, 2011, 32 (7), pp.874-876. ⟨10.1109/LED.2011.2138674⟩. ⟨hal-00639802⟩
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K. Cheng, S. Degroote, M. Leys, F Medjdoub, J. Derluyn, et al.. AlN/GaN heterostructures grown by metal organic vapour phase epitaxy with in situ Si3N4 passivation. Journal of Crystal Growth, 2011, 315, pp.204-207. ⟨10.1016/j.jcrysgro.2010.09.025⟩. ⟨hal-00572672⟩
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Conference papers

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F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland. First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate. 69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩
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F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland. SiN/AlN/GaN : a promising heterostructure for millimeter wave applications. 35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, May 2011, Catania, Italy. pp.39-40. ⟨hal-00603112⟩
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F Medjdoub. Towards cost-effective millimeter wave high power GaN devices. 20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. ⟨hal-00807130⟩
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Z. Yuan, K. Ziouche, Z. Bougrioua, P. Godts, T. Lasri, et al.. A new method to improve the efficiency of the heat flow path of a micro thermoelectric generator. 9th European Conference on Thermoelectrics, ECT 2011, 2011, Thessaloniki, Greece. pp.435-438, ⟨10.1063/1.4731589⟩. ⟨hal-00800350⟩
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F Medjdoub, Malek Zegaoui, R. Crunelle, N. Rolland, Paul-Alain Rolland. Innovative ultrathin barrier GaN-based heterostructure : towards higher performance transmitters and receivers up to W band. CMOS Emerging Technologies Meeting, CMOSET 2011, 2011, Whistler, BC, Canada. ⟨hal-00807128⟩
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K. Ziouche, P. Godts, Z. Bougrioua, C. Sion, T. Lasri, et al.. New unpackaged infrared microsensors for house automation. TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, unknown, Morocco. CDROM, session A4, papier 166, 1-5. ⟨hal-00591379⟩
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Book sections

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F Medjdoub. GaN-based on large diameter Si substrate for next generation of high power/high temperature devices. Iniewski K. Nano-semiconductors : devices and technology, CRC Press, chapter 16, 461-484, 2011, ISBN 978-1-4398-4835-7. ⟨hal-00799648⟩
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Patents

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K. Ziouche, P. Godts, Didier Leclercq, T. Lasri. Microgénérateur de tension utilisant la chaleur latente de changement de phase d'un liquide. France, N° de brevet: FR2955708 (A1). 2011. ⟨hal-00612417⟩
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2010

Journal articles

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K. Ziouche, P. Godts, Z. Bougrioua, C. Sion, T. Lasri, et al.. Quasi-monolithic heat flux microsensor based on porous silicon boxes. Sensors and Actuators A: Physical , 2010, 164, pp.35-40. ⟨10.1016/j.sna.2010.09.015⟩. ⟨hal-00549493⟩
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Conference papers

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C. Sion, K. Ziouche, P. Godts, Z. Bougrioua, T. Lasri, et al.. Imageur infrarouge faible coût, faible résolution pour applications grand public. Congrès de la Société Française de Thermique, SFT 2010, 2010, Inconnue, France. pp.Vol. 18, 687-690. ⟨hal-00573202⟩
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Kamel Haddadi, M. Wang, K. Ziouche, D. Glay, T. Lasri. Miniature dual six-port millimeter-wave network analyzer on alumina ceramic substrate. 40th European Microwave Conference, EuMC 2010, 2010, France. pp.1564-1567. ⟨hal-00568960⟩
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F Medjdoub, D. Marcon, J. Das, J. Derluyn, K. Cheng, et al.. GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C. 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.37-40. ⟨hal-00549996⟩
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2009

Journal articles

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M. Alomari, F Medjdoub, E. Kohn, M.A. Di Forte-Poisson, S. Delage, et al.. InAlN/GaN MOS-HEMT with thermally grown oxide. International Journal of High Speed Electronics and Systems, 2009, 19, pp.137-144. ⟨10.1142/S0129156409006187⟩. ⟨hal-00473433⟩
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M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, et al.. InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess. IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩
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D. Resca, V. Di Giacomo, A. Raffo, R. Cignani, A. Santarelli, et al.. Nonlinear modeling of InP devices for W-band applications. International Journal of Microwave and Wireless Technologies, 2009, 1, pp.145-151. ⟨10.1017/S1759078709000099⟩. ⟨hal-00473633⟩
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Conference papers

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Christophe Gaquière, D. Ducatteau, D. Theron, F Medjdoub, M.A. Poisson. Time domain analyses of trapping effects of AlInN/GaN HEMT devices. International Microwave Symposium, IMS 2009, Workshop WWC : Advanced Measurement Techniques, Adapted for Different Memory Effects, 2009, Boston, MA, United States. ⟨hal-00575423⟩
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E. Kohn, M. Alomari, A. Denisenko, M. Dipalo, D. Maier, et al.. InAlN/GaN heterostructures for microwave power and beyond. International Electron Devices Meeting, IEDM 2009, 2009, United States. pp.1-4, ⟨10.1109/IEDM.2009.5424395⟩. ⟨hal-00474463⟩
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Kamel Haddadi, M.M. Wang, D. Glay, K. Ziouche, T. Lasri. Double réflectomètre millimétrique six-port. 16èmes Journées Nationales Microondes, JNM 2009, 2009, France. pp.6D-7, 1-4. ⟨hal-00573521⟩
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Kamel Haddadi, M.M. Wang, D. Glay, K. Ziouche, T. Lasri. Analyseur de réseaux millimétrique six-port et calibrage associé. TELECOM'2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Maroc. pp.A4-3, 1-4. ⟨hal-00573515⟩
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C. Sion, P. Godts, K. Ziouche, Z. Bougrioua, T. Lasri, et al.. Nouveaux microcapteurs de flux thermique en technologie silicium - Application à la détermination rapide de la température de rosée. 15ème Colloque National de la Recherche en IUT, CNRIUT'09, 2009, Villeneuve d'Ascq, France. ⟨hal-00575719⟩
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2008

Journal articles

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F Medjdoub, J.F. Carlin, Christophe Gaquière, N. Grandjean, E. Kohn. Status of the emerging InAlN/GaN power HEMT technology. Open Electrical and Electronic Engineering Journal, 2008, 2, pp.1-7. ⟨10.2174/1874129000802010001⟩. ⟨hal-00357799⟩
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F Medjdoub, M. Alomari, J.F. Carlin, M. Gonschorek, E. Feltin, et al.. Effect of fluoride plasma treatment on InAlN/GaN HEMTs. Electronics Letters, 2008, 44, pp.696-698. ⟨10.1049/el:20080864⟩. ⟨hal-00357798⟩
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Conference papers

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F Medjdoub, J.-F Carlin, M Alomari, M Gonschorek, E Feltin, et al.. InAlN/GaN MOSHEMT with thermally grown oxide. Device Research Conference, Jun 2008, Santa barbara, United States. ⟨hal-03281290⟩
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https://hal.archives-ouvertes.fr/hal-03281290/file/farid%20DRC%2008%20InAlN%20ox.pdf BibTex
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P. Godts, M. Haffar, K. Ziouche, Z. Bougrioua, D. Leclerq. Nouveaux microcapteurs de flux thermique et de rayonnement infrarouge planaires à faible coût en technologie silicium pour applications domotiques. 6ème Colloque CAPTEURS 2008, 2008, France. pp.13-16. ⟨hal-00361035⟩
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M. Alomari, F Medjdoub, J.F. Carlin, N. Grandjean, Christophe Gaquière, et al.. InAlN/GaN MOSHEMT with thermally grown oxide. Lester Eastman Conference on High Performance Devices, 2008, Newark, DE, United States. ⟨hal-00362034⟩
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F Medjdoub, M. Alomari, J.F. Carlin, M. Gonschorek, E. Feltin, et al.. Towards high performance E-mode InAlN/GaN HEMTs. 32nd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2008, 2008, Belgium. pp.97-98. ⟨hal-00361120⟩
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C. Sion, K. Ziouche, P. Godts, T. Lasri, D. Leclercq. Microcapteurs thermiques et applications. International Contactless Technologies Forum, ICTF 2008, 2008, Lille, France. ⟨hal-00811752⟩
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E. Kohn, M. Alomari, F Medjdoub, S. Delage, M.A. Poisson, et al.. InAlN HEMTs - Design - Technology - Performance. Lester Eastman Conference on High Performance Devices, 2008, Newark, DE, United States. ⟨hal-00362033⟩
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2007

Journal articles

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F Medjdoub, N. Sarazin, M. Tordjman, M. Magis, M.A. Di Forte-Poisson, et al.. Characteristics of Al2O3/AllnN/GaN MOSHEMT. Electronics Letters, 2007, 43, pp.691-692. ⟨10.1049/el:20070425⟩. ⟨hal-00283495⟩
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F Medjdoub, D. Ducatteau, Christophe Gaquière, J.E. Carlin, M. Gonschorek, et al.. Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains. Electronics Letters, 2007, 43, pp.309-311. ⟨10.1049/el:20073170⟩. ⟨hal-00283497⟩
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Conference papers

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P. Godts, M. Haffar, M. Yala, K. Ziouche, D. Leclercq. Mesure de chaleur latente d'évaporation de gouttelettes. Congrès de la Société Française de Thermique, SFT 2007, 2007, Ville Inconnue, France. pp.885-890. ⟨hal-00284490⟩
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F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, et al.. Barrier layer downscaling of InAlN/GaN HEMTs. 65th Annual Device Research Conference, DRC 2007, 2007, United States. pp.109-110, ⟨10.1109/DRC.2007.4373673⟩. ⟨hal-00284407⟩
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J.F. Carlin, F Medjdoub, M. Gonschorek, E. Feltin, M.A. Py, et al.. Growth and characterization of AlInN/GaN field effect transistors. Proceedings of the 7th International Conference of Nitride Semiconductors, ICNS-7, 2007, Las Vegas, NV, United States. ⟨hal-00367697⟩
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M. Haffar, M. Ait-Hammouda Yala, K. Ziouche, P. Godts, D. Leclercq. Développement de réseaux de microcapteurs infrarouge pour la détection de présence humaine dans l'habitat. TELECOM'2007 & 5èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2007, Inconnue, Maroc. pp.438-442. ⟨hal-00284488⟩
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F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, et al.. Breaking the AlGaN/GaN HEMT scaling limit with AlInN barriers. Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2007, 2007, Venice, Italy. ⟨hal-00367695⟩
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K. Ziouche, M. Haffar, M. Ait-Hammouda Yala, P. Godts, D. Leclercq. Procédés de fabrication d'un microcapteur de température et de flux thermique. TELECOM'2007 & 5èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2007, Unknown, Maroc. pp.157-160. ⟨hal-00284489⟩
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M. Haffar, M. Ait-Hammouda Yala, K. Ziouche, P. Godts, D. Leclercq. New package-free infrared microsensors array for a low cost and low resolution thermal imager for indoor presence detection. SENSOR 2007, 2007, Unknown, Germany. pp.217-222. ⟨hal-00362682⟩
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Christophe Gaquière, F Medjdoub, J.F. Carlin, S. Vandenbrouck, E. Delos, et al.. AlInN/GaN a suitable HEMT device for extremely high power high frequency applications. IEEE International Microwave Symposium, IEEE/MTT-S 2007, 2007, United States. pp.2145-2148, ⟨10.1109/MWSYM.2007.380349⟩. ⟨hal-00284400⟩
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M. Alomari, F Medjdoub, E. Kohn, J.F. Carlin, M. Gonschorek, et al.. Estimation of the surface potential of unstrained InAlN/GaN HEMT's. Proceedings of the 16th European Workshop on Heterostructure Technology, HeTech'07, 2007, Fréjus, France. ⟨hal-00367698⟩
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K. Ziouche, M. Yala, M. Haffar, P. Godts, D. Leclercq. Mesure de température sans contact en milieu sale. Congrès de la Société Française de Thermique, SFT 2007, 2007, Ville inconnue, France. pp.879-884. ⟨hal-00362683⟩
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Patents

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K. Ziouche, P. Godts, D. Leclercq. Microcapteurs de flux thermique sur substrat conducteur avec caisson(s) poreux. France, N° de brevet: EP1767913 (A1). 2007. ⟨hal-00372349⟩
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2006

Journal articles

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F Medjdoub, S. Vandenbrouck, Christophe Gaquière, E. Delos, M. Zaknoune, et al.. Power measurement setup for large signal microwave characterization at 94 GHz. IEEE Electron Device Letters, 2006, 16, pp.218-220. ⟨hal-00127945⟩
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F Medjdoub, J.F. Carlin, M. Gonschorek, M.A. Py, N. Grandjean, et al.. Small-signal characteristics of AlInN/GaN HEMTs. Electronics Letters, 2006, 42, pp.779-780. ⟨hal-00154929⟩
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Conference papers

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F Medjdoub, D. Ducatteau, Christophe Gaquière, J.-F Carlin, M Gonschorek, et al.. Surface capping of AlInN/GaN HEMT structures. European Workshop on III-Nitride Semiconductor Materials and Devices, Sep 2006, Heraklion, Greece. ⟨hal-03281380⟩
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https://hal.archives-ouvertes.fr/hal-03281380/file/EW3NS%20F_Medjdoub.pdf BibTex
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F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, et al.. Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?. IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩
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2005

Journal articles

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Mohamed Boutchich, Katir Ziouche, M. Ait-Hammouda Yala, Pascale Godts, Didier Leclercq. Package-free infrared micro sensor using polysilicon thermopile. Sensors and Actuators A: Physical , 2005, 121 (1), pp.52-58. ⟨10.1016/j.sna.2005.01.016⟩. ⟨hal-00125621⟩
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F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière, F. Dessenne, et al.. InP HEMT downscaling for power applications at W band. IEEE Transactions on Electron Devices, 2005, 52, pp.2136-2143. ⟨hal-00126460⟩
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F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière, D. Theron. 94 GHz high power performances of InAs0.4P0.6 channel HEMTs on InP. Electronics Letters, 2005, 41, pp.63-64. ⟨hal-00126459⟩
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F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière, D. Theron. High performances of InP channel power HEMT at 94 GHz. Electronics Letters, 2005, 41, pp.1406-1408. ⟨hal-00154912⟩
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Conference papers

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Malika Aithammouda, Katir Ziouche, Mehdi Haffar, Pascale Godts, Didier Leclercq. Étude du pouvoir thermoélectrique de couches de polysilicium dopées N et P de 20 à 450 °C. MajecSTIC 2005 : Manifestation des Jeunes Chercheurs francophones dans les domaines des STIC, IRISA – IETR – LTSI, Nov 2005, Rennes, pp.368-372. ⟨inria-00000730⟩
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https://hal.inria.fr/inria-00000730/file/26.pdf BibTex
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D. Theron, F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière. InP and InAsP channel HEMT for millimeter wave applications. Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2005, 2005, Miami, FL, United States. ⟨hal-00126470⟩
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D. Theron, F Medjdoub, M. Zaknoune, Christophe Gaquière, X. Wallart. HEMTs with InP and InAsP channel for 94 GHz applications. 14th European Workshop on Heterostructure Technology, HeTech'05, 2005, Smolenice, Slovakia. ⟨hal-00126469⟩
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M. Haffar, M. Ait-Hammouda Yala, K. Ziouche, P. Godts, Didier Leclercq. Nouveaux microcapteurs thermiques en technologie silicium pour des applications en automobile. Galerie de la Recherche et de l'Innovation, 2005, Marcq en Baroeul, France. ⟨hal-00126736⟩
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F Medjdoub, M. Zaknoune, X. Wallart, D. Theron. Power potentiality at 94 GHz of InP HEMTs with large band gap channels. 2005, pp.137-140. ⟨hal-00154913⟩
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M. Haffar, Yala M. Ait-Hammouda, K. Ziouche, P. Godts, D. Leclercq. New package-free silicon microsensors for infrared and thermal flow measurements. Potential automotive applications. Proceedings of 2005 Sensors & Actuators for Advanced Automotive Applications, SENSACT 2005, 2005, Noisy-Le-Grand, France. ⟨hal-00131328⟩
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M. Aithammouda, M. Haffar, K. Ziouche, P. Godts, D. Leclercq. Development of new thermal systems of human presence detection intended to introduce innovating functionalities into housing. Proceedings of 2005 Innovative Technologies for Infrastructure and Housing, 2005, Lille, France. ⟨hal-00131327⟩
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M. Haffar, M. Yala, K. Ziouche, P. Godts, Didier Leclercq. Réseau de micro-capteurs infrarouge faible coût pour la détection de présence dans les zones à risque. Actes du Colloque International Francophone : Performances et Nouvelles Technologies en Maintenance, PENTOM 2005, 2005, Marrakech, Maroc. ⟨hal-00131326⟩
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M. Aithammouda, M. Haffar, K. Ziouche, P. Godts, D. Leclercq. Etude du pouvoir thermoélectrique de couches de polysilicium dopées N et P de 20 à 450°C. Actes de MajeSTIC 2005, 2005, Rennes, France. ⟨hal-00131329⟩
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2004

Journal articles

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F Medjdoub, F. Dessenne, Jean-Luc Thobel, M. Zaknoune, D. Theron. Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates. Solid-State Electronics, 2004, 48 (5), pp.683-688. ⟨10.1016/j.sse.2003.09.011⟩. ⟨hal-00133956⟩
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Conference papers

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Nour Eddine Bourzgui, Vianney Mille, F Medjdoub, Bertrand Bocquet. Nouveau dispositif d'analyse hyperfréquence des biomolécules. Actes du 2ème Congrès Français de Microfluidique, Dec 2004, Toulouse, France. ⟨hal-00248091⟩
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Vianney Mille, Nour Eddine Bourzgui, F Medjdoub, Bertrand Bocquet. Design of silicon-pTMDS bio-MEMS with millimeter and sub-millimeter waves transducers. 34th European Microwave Conference, EuMC 2004, Oct 2004, Amsterdam, Netherlands. pp.1/169-172. ⟨hal-00248088⟩
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Vianney Mille, Nour Eddine Bourzgui, F Medjdoub, L. Desplanque, Jean-Francois Lampin, et al.. Technological development of THz microfluidic microsystems for biological spectroscopy. Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, Sep 2004, Karlsruhe, Germany. pp.549-550, ⟨10.1109/ICIMW.2004.1422207⟩. ⟨hal-00162775⟩
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Other publications

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F Medjdoub. Conception et réalisation de transistors sur substrat InP pour amplification de puissance en bande W. 2004. ⟨hal-00141953⟩
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2003

Conference papers

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F Medjdoub, M. Zaknoune, X. Wallart, F. Dessenne, Jean-Claude de Jaeger, et al.. HEMT technology for power applications at 94 GHz and above. 12th European Workshop on Heterostructure Technology, heTech 2003, 2003, San Rafael, Spain. ⟨hal-00146695⟩
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Katir Ziouche, Mohamed Boutchich, M. Achani, Pascale Godts, Didier Leclercq. A new infrared microsensor. Sensor 2003, 2003, Nuremberg, Germany. ⟨hal-00146386⟩
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D. Theron, F Medjdoub, M. Zaknoune, X. Wallart, F. Dessenne, et al.. Sub 0.1 µm – InP based HEMTs for high power and high frequency. Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2003, 2003, Atlanta, GA, United States. ⟨hal-00146719⟩
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2002

Journal articles

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Mohamed Boutchich, Katir Ziouche, Pascale Godts, Didier Leclercq. Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373K. IEEE Electron Device Letters, 2002, 23 (3), pp.139-141. ⟨10.1109/55.988817⟩. ⟨hal-00148729⟩
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Conference papers

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F Medjdoub, D. Theron, F. Dessenne, R. Fauquembergue, Jean-Claude de Jaeger. Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer. 2002, pp.57-62. ⟨hal-00149710⟩
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M. Zaknoune, X. Wallart, F Medjdoub, M. Ardouin, B. Bonte, et al.. AlInAs/GaInAs HEMTs for power amplification at 60 GHz. Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2002, 2002, Austin, TX, United States. ⟨hal-00149711⟩
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2001

Journal articles

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P. Godts, K. Ziouche, D. Leclercq. Microcapteur de rayonnement infrarouge en technologie silicium. Micro Systèmes, 2001, 27, pp.3. ⟨hal-00152187⟩
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Conference papers

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Pascale Godts, Katir Ziouche, Mohamed Boutchich, Didier Leclercq. Thermoelectric infrared microsensor using suspended membranes made by silicon micromachining. SPIE 15th Annual International Symposium on Aerospace/Defense Sensing, Simulation and Controls, Infrared Technology and Applications, AeroSense 2001, Apr 2001, Orlando, FL, United States. pp.380-388, ⟨10.1117/12.445332⟩. ⟨hal-00152189⟩
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Didier Leclercq, Katir Ziouche, Mohamed Boutchich, Pascale Godts. New developments on IR distribution-patterned microradiometers family. SPIE 15th Annual International Symposium on Aerospace/Defense Sensing, Simulation and Controls, Infrared Technology and Applications, AeroSense 2001, Apr 2001, Orlando, United States. pp.389-396, ⟨10.1117/12.445333⟩. ⟨hal-00152188⟩
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Katir Ziouche, Mohamed Boutchich, Pascale Godts, Didier Leclercq. Réalisation de nouveaux microradiomètres sur silicium. Etude des propriétés thermoélectriques du polysilicium dopé N et P. 8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France. ⟨hal-00152208⟩
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Katir Ziouche, Mohamed Boutchich, Pascale Godts, Didier Leclercq. Méthode de mesure de l'absorptivité différentielle de 2 matériaux. Application en UV et IR. Conférence Métrologie 2001, 2001, Saint Louis, France. ⟨hal-00152207⟩
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Katir Ziouche, Mohamed Boutchich, D. Loridant-Bernard, Pascale Godts, Didier Leclercq. A new ultra-violet microradiometer. Sensors 2001, 2001, Nuremberg, Germany. pp.221-226. ⟨hal-00152186⟩
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2000

Journal articles

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K. Ziouche, P. Godts, D. Leclercq. Polyimid resist as infrared absorbing layer for radiation microsensors. Sensors and Materials, 2000, 12, pp.445-454. ⟨hal-00158488⟩
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Conference papers

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K. Ziouche, P. Godts, D. Leclercq. Microradiomètres thermiques. Journée Microsystèmes, 2000, Paris, France. ⟨hal-00158492⟩
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Katir Ziouche, Mohamed Boutchich, D. Loridant-Bernard, Pascale Godts, Didier Leclercq. Nouveau microcapteur de rayonnement ultraviolet à absorption différentielle. Journées Micro et Nano Technologies, 2000, Paris, France. ⟨hal-00158491⟩
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