Publications HAL de la structure 1296;1066983;1079230

2024

Journal articles

ref_biblio: François Grandpierron, Elodie Carneiro, Lyes Ben-Hammou, Jeong-Sun Moon, Farid Medjdoub. Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors. Micromachines, 2024, ⟨10.3390/mi15111356⟩. ⟨hal-04772530⟩
titre: Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors
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ref_biblio: Sondre Michler, Youssef Hamdaoui, Sarad Thapa, Georg Schwalb, Sven Besendörfer, et al.. Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage. Physica Status Solidi A (applications and materials science), 2024, 2400544 8 p. ⟨10.1002/pssa.202400544⟩. ⟨hal-04746536⟩
titre: Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage
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ref_biblio: Farid Medjdoub, Keisuke Shinohara, Fabian Thome, Jeong-Sun Moon, Eduardo Chumbes, et al.. Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications. IEEE Microwave Magazine, 2024, 25 (10), pp.18-37. ⟨10.1109/MMM.2024.3428188⟩. ⟨hal-04720821⟩
titre: Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications
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ref_biblio: Youssef Hamdaoui, Sofie S T Vandenbroucke, Sondre Michler, Katir Ziouche, Matthias M Minjauw, et al.. Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices. Micromachines, 2024, 15, ⟨10.3390/mi15091157⟩. ⟨hal-04722212⟩
titre: Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices
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ref_biblio: Gaurav Bhargava, Shubhankar Majumdar, Farid Medjdoub. Importing Experimental Results via S2D Model in ADS Tool for Power Amplifier Design. IETE journal of research, 2024, pp.1-8. ⟨10.1080/03772063.2024.2326588⟩. ⟨hal-04500396⟩
titre: Importing Experimental Results via S2D Model in ADS Tool for Power Amplifier Design
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ref_biblio: Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, et al.. Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility. Advanced Electronic Materials, In press, ⟨10.1002/aelm.202400069⟩. ⟨hal-04665123⟩
titre: Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility
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ref_biblio: Youssef Hamdaoui, Sondre Michler, Adrien Bidaud, Katir Ziouche, Farid Medjdoub. 1200-V Fully Vertical GaN-on-Silicon p-i-n Diodes With Avalanche Capability and High On-State Current Above 10 A. IEEE Transactions on Electron Devices, 2024, pp.1-6. ⟨10.1109/TED.2024.3496440⟩. ⟨hal-04797737⟩
titre: 1200-V Fully Vertical GaN-on-Silicon p-i-n Diodes With Avalanche Capability and High On-State Current Above 10 A
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Conference papers

ref_biblio: Meneghini M., Fregolent M., Zagni N., Hamadoui Y., Marcuzzi A., et al.. Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC. IEDM 2023 - 70th Annual IEEE International Electron Devices Meeting, Dec 2024, San Francisco, United States. ⟨hal-04762052⟩
titre: Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC
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ref_biblio: Abdelaziz Hamdoun, Farid Medjdoub, Mohamed Himdi, Malek Zegaoui, Olivier Lafond. 40 GHz Beam-Steering Two-Elements Array Antenna Using GaN Varactors for Millimeter-Wave Applications. 2024 54th European Microwave Conference (EuMC), Sep 2024, Paris, France. pp.900-903, ⟨10.23919/EuMC61614.2024.10732218⟩. ⟨hal-04764675⟩
titre: 40 GHz Beam-Steering Two-Elements Array Antenna Using GaN Varactors for Millimeter-Wave Applications
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ref_biblio: N. Said, D. Saugnon, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, et al.. RF-Robustness enhancement in AlN/GaN HEMT through AlGaN Back-Barrier: nonlinear model analysis. 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.2-5, ⟨10.23919/EuMIC61603.2024.10732162⟩. ⟨hal-04765521⟩
titre: RF-Robustness enhancement in AlN/GaN HEMT through AlGaN Back-Barrier: nonlinear model analysis
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ref_biblio: Jash Mehta, Yannick Guhel, Julien Bassaler, Yvon Cordier, Philippe Ferrandis, et al.. Evaluation of Self-Heating Effects in AlGaN Channel Heterostructure field-effect Transistors grown on bulk AlN substrate. European Materials Research Society (EMRS) Fall 2024, Sep 2024, Varsovie, Poland. ⟨hal-04761108⟩
titre: Evaluation of Self-Heating Effects in AlGaN Channel Heterostructure field-effect Transistors grown on bulk AlN substrate
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ref_biblio: Youssef Hamdaoui, Sondre Michler, Katir Ziouche, Christophe Detavernier, F Medjdoub. High performance fully vertical GaN on Silicon PIN diodes for next generation power devices. 15th Topical Workshop on Heterostructure Microelectronics, Aug 2024, Sendai, Japan. ⟨hal-04762081⟩
titre: High performance fully vertical GaN on Silicon PIN diodes for next generation power devices
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ref_biblio: L. Ben-Hammou, Francois Grandpierron, Kathia Harrouche, F Medjdoub. The next Millimeter-Wave breakthrough coming up with advanced AlN/GaN transistors. GaN Marathon, Jun 2024, Verone, Italy. ⟨hal-04762018⟩
titre: The next Millimeter-Wave breakthrough coming up with advanced AlN/GaN transistors
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ref_biblio: Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, et al.. Carrier density analysis in stressed n-doped GaN layers on sapphire. GaN Marathon, Jun 2024, Vérone, Italy. ⟨hal-04639487⟩
titre: Carrier density analysis in stressed n-doped GaN layers on sapphire
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ref_biblio: Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, F Medjdoub. High quality fully versus pseudo vertical GaN-on-Silicon pn diodes. GaN Marathon, Jun 2024, VERONA, Italy. ⟨hal-04762008⟩
titre: High quality fully versus pseudo vertical GaN-on-Silicon pn diodes
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ref_biblio: Elodie Carneiro, L. Ben Hammou, S. Rennesson, Etienne Okada, Fabrice Semond, et al.. Short-term reliability assessment of sub-micron thick AlN/GaN-on-Silicon HEMTs grown by MBE for RF applications. Compound Semiconductor Week (CSW), Jun 2024, Lund, Sweden. ⟨hal-04761106⟩
titre: Short-term reliability assessment of sub-micron thick AlN/GaN-on-Silicon HEMTs grown by MBE for RF applications
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ref_biblio: L. Ben Hammou, Francois Grandpierron, Elodie Carneiro, Katir Ziouche, Etienne Okada, et al.. Investigation of the origin of deep levels in Carbon-doped AlN/GaN/AlGaN HEMTs. 7th Workshop on Compound Semiconductor Devices and Integrated Circuits, May 2024, Heraklion, Greece. ⟨hal-04762106⟩
titre: Investigation of the origin of deep levels in Carbon-doped AlN/GaN/AlGaN HEMTs
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ref_biblio: François Grandpierron, Elodie Carneiro, L. Ben Hammou, Etienne Okada, J. Strate, et al.. Impact of Carbon-doped AlGaN back barrier in AlN/GaN/AlGaN HEMTs. 47th Workshop on Compound Semiconductor Devices and Integrated Circuits, May 2024, Heraklion, Greece. ⟨hal-04762100⟩
titre: Impact of Carbon-doped AlGaN back barrier in AlN/GaN/AlGaN HEMTs
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ref_biblio: Hamdaoui Y., Michler S., Abid I., Ziouche K., F Medjdoub. Local substrate removal enabling next generation fully vertical GaN-on-Si power devices. Materials for Advanced Metallization, Mar 2024, Milan, Italy. ⟨hal-04762063⟩
titre: Local substrate removal enabling next generation fully vertical GaN-on-Si power devices
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Special issue

ref_biblio: Matteo Meneghini, Geok Ing Ng, Farid Medjdoub, Matteo Buffolo, Shireen Warnock, et al.. Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications. IEEE Transactions on Electron Devices, 71 (3), pp.1340-1343, 2024, ⟨10.1109/TED.2024.3359934⟩. ⟨hal-04493325⟩
titre: Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications
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2023

Journal articles

ref_biblio: Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, F Medjdoub. Demonstration of avalanche capability in 800 V vertical GaN-on-Silicon diodes. Applied Physics Express, 2023, 17 (1), pp.016503. ⟨10.35848/1882-0786/ad106c⟩. ⟨hal-04313786⟩
titre: Demonstration of avalanche capability in 800 V vertical GaN-on-Silicon diodes
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ref_biblio: N. Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, et al.. Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications. Microelectronics Reliability, 2023, 150, pp.115110. ⟨10.1016/j.microrel.2023.115110⟩. ⟨hal-04278649⟩
titre: Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications
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ref_biblio: Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond, et al.. Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer Breakdown Field. Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200846. ⟨10.1002/pssa.202200846⟩. ⟨hal-04042888⟩
titre: Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer Breakdown Field
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ref_biblio: Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond, et al.. Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate. Electronics, 2023, 12 (13), ⟨10.3390/electronics12132974⟩. ⟨hal-04164261⟩
titre: Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate
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ref_biblio: Reda Elwaradi, Jash Mehta, Thi Huong Ngo, Maud Nemoz, Catherine Bougerol, et al.. Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate. Journal of Applied Physics, 2023, 133 (14), pp.145705. ⟨10.1063/5.0147048⟩. ⟨hal-04086494⟩
titre: Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate
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ref_biblio: Zeyu Chi, Tamar Tchelidze, Corinne Sartel, Tsotne Gamsakhurdashvili, Ismail Madaci, et al.. Assessment of Large Critical Electric Field in Ultra-wide Bandgap p- type Spinel ZnGa2O4. Journal of Physics D: Applied Physics, 2023, 56 (10), pp.105102. ⟨10.1088/1361-6463/acbb14⟩. ⟨hal-03997451⟩
titre: Assessment of Large Critical Electric Field in Ultra-wide Bandgap p- type Spinel ZnGa2O4
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ref_biblio: Kathia Harrouche, Srisaran Venkatachalam, Lyes Ben-Hammou, François Grandpierron, Etienne Okada, et al.. Low Trapping Effects and High Electron Confinement in Short AlN/GaN-on-SiC HEMTs by Means of a Thin AlGaN Back Barrier. Micromachines, 2023, 14 (2), pp.291. ⟨10.3390/mi14020291⟩. ⟨hal-03952213⟩
titre: Low Trapping Effects and High Electron Confinement in Short AlN/GaN-on-SiC HEMTs by Means of a Thin AlGaN Back Barrier
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ref_biblio: Jash Mehta, Idriss Abid, Julien Bassaler, Julien Pernot, Philippe Ferrandis, et al.. High Al-content AlGaN channel high electron mobility transistors on silicon substrate. e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 3, pp.100114. ⟨10.1016/j.prime.2023.100114⟩. ⟨hal-03952273⟩
titre: High Al-content AlGaN channel high electron mobility transistors on silicon substrate
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ref_biblio: Ayyoub Dziri, Alex Montagne, Francine Roudet, Katir Ziouche, Didier Chicot. Martens hardness of Constantan thin films on (100) Si wafer: Improvement in contact area function in nanoindentation. Thin Solid Films, 2023, pp.139712. ⟨10.1016/j.tsf.2023.139712⟩. ⟨hal-03951065⟩
titre: Martens hardness of Constantan thin films on (100) Si wafer: Improvement in contact area function in nanoindentation
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ref_biblio: J. Mehta, Idriss Abid, Reda Elwaradi, Yvon Cordier, F Medjdoub. Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics. e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 5, pp.100263. ⟨10.1016/j.prime.2023.100263⟩. ⟨hal-04194891⟩
titre: Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics
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ref_biblio: Ibrahim Bel-Hadj, Zahia Bougrioua, Katir Ziouche. Metal-based folded-thermopile for 2.5D micro-thermoelectric generators. Sensors and Actuators A: Physical , 2023, 349, pp.114090. ⟨10.1016/j.sna.2022.114090⟩. ⟨hal-03899754⟩
titre: Metal-based folded-thermopile for 2.5D micro-thermoelectric generators
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ref_biblio: Ajay Shanbhag, Francois Grandpierron, Kathia Harrouche, Farid Medjdoub. Physical Insights of thin AlGaN Back Barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs. Applied Physics Letters, 2023, 123 (4), pp.142102. ⟨10.1063/5.0168918⟩. ⟨hal-04224748⟩
titre: Physical Insights of thin AlGaN Back Barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs
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Conference papers

ref_biblio: F Medjdoub. [Invited] Highly efficiency and reliable mm-wave AlN/GaN transistors. XXII International Workshop on Physics of Semiconductor Devices, Indian Institute of Technology Madras; Society for Semiconductor Devices (SSD) Semiconductor Society (India), Dec 2023, Madras, India. ⟨hal-04438147⟩
titre: [Invited] Highly efficiency and reliable mm-wave AlN/GaN transistors
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ref_biblio: Kathia Harrouche, Lyes Ben-Hammou, François Grandpierron, Ajay Shanbhag, Etienne Okada, et al.. Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation and reduced trapping effects. 14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436421⟩
titre: Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation and reduced trapping effects
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ref_biblio: Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Lyes Ben Hammou, Kathia Harrouche, et al.. [Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications. 14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04397317⟩
titre: [Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications
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ref_biblio: Idriss Abid, Youssef Hamdaoui, Sondre Michler, Katir Ziouche, F Medjdoub. Process optimization of Fully Vertical GaN-on-Silicon PIN diodes. 14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436413⟩
titre: Process optimization of Fully Vertical GaN-on-Silicon PIN diodes
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ref_biblio: Ziyao Gao, Youssef Hamdaoui, Idriss Abid, F Medjdoub, Elke Meissner, et al.. Dislocation density reduction for vertical GaN devices on 200 mm Si. 14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436407⟩
titre: Dislocation density reduction for vertical GaN devices on 200 mm Si
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ref_biblio: F Medjdoub. [Invited] Pushing the breakdown voltage and temperature capabilities of GaN HEMTs by using UWBG Al-rich channel. European Materials Research Society Fall 2023 (EMRS-2023), Sep 2023, Warsaw, Poland. ⟨hal-04436468⟩
titre: [Invited] Pushing the breakdown voltage and temperature capabilities of GaN HEMTs by using UWBG Al-rich channel
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ref_biblio: F Medjdoub. [Invited] High efficiency high robustness Q-band AlN/GaN transistors. International Conference on Materials for Advanced Technologies (ICMAT) 2023, Jun 2023, Singapore, Singapore. ⟨hal-04436475⟩
titre: [Invited] High efficiency high robustness Q-band AlN/GaN transistors
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ref_biblio: F Medjdoub. [Invited] High efficiency high robustness mmW AlN/GaN transistors. International Microwave Symposium (IMS 2023), Jun 2023, San Diego (CA), United States. ⟨hal-04438141⟩
titre: [Invited] High efficiency high robustness mmW AlN/GaN transistors
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ref_biblio: Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, F Medjdoub. Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes. Compound semiconductor week 2023, May 2023, Jeju, South Korea. ⟨hal-04436387⟩
titre: Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes
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ref_biblio: Elodie Carneiro, Stéphanie Rennesson, Fabrice Semond, F Medjdoub. Comparison of Sub-Micron thick AlGaN/GaN and AlN/GaN HEMTs on Silicon for RF applications. 46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy. ⟨hal-04438164⟩
titre: Comparison of Sub-Micron thick AlGaN/GaN and AlN/GaN HEMTs on Silicon for RF applications
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ref_biblio: Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, F Medjdoub. High quality drift layer thickness scaling in vertical GaN-on-Silicon PIN diodes. 46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy. ⟨hal-04438189⟩
titre: High quality drift layer thickness scaling in vertical GaN-on-Silicon PIN diodes
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ref_biblio: Kathia Harrouche, François Grandpierron, Lyes Ben-Hammou, Etienne Okada, F Medjdoub. Pushing Q-band power performances by means of buffer engineering in AlN-GaN HEMTs. 46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy. ⟨hal-04438176⟩
titre: Pushing Q-band power performances by means of buffer engineering in AlN-GaN HEMTs
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ref_biblio: Nasri Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, et al.. Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. IEEE International Reliability Physics Symposium (IRPS 2023), Mar 2023, Monterey, CA, United States. ⟨10.1109/IRPS48203.2023.10117807⟩. ⟨hal-04125371⟩
titre: Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications
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Book sections

ref_biblio: Matteo Meneghini, Srabanti Chowdhury, Joff Derluyn, Farid Medjdoub, Dong Ji, et al.. 15. GaN-Based Lateral and Vertical Devices. Massimo Rudan; Rossella Brunetti; Susanna Reggiani. Springer Handbook of Semiconductor Devices, Springer International Publishing, pp.525-578, 2023, Springer Handbooks, ⟨10.1007/978-3-030-79827-7_15⟩. ⟨hal-03875409⟩
titre: 15. GaN-Based Lateral and Vertical Devices
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Other publications

ref_biblio: Farid Medjdoub. [Seminar] Status and progress of GaN-based high electron mobility transistors for millimetre-wave power applications. Workshop on Electrical and thermal characterization of HEMT, Jointly Organized by IEEE EDS Delhi Chapter (New Delhi, India), september 26, 2023. ⟨hal-04218271⟩
titre: [Seminar] Status and progress of GaN-based high electron mobility transistors for millimetre-wave power applications
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2022

Journal articles

ref_biblio: Kathia Harrouche, Srisaran Venkatachalam, François Grandpierron, Etienne Okada, Farid Medjdoub. Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances. Applied Physics Express, 2022, 15 (11), pp.116504. ⟨10.35848/1882-0786/ac9c46⟩. ⟨hal-03828718⟩
titre: Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances
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ref_biblio: Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub, et al.. Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template. Journal of Applied Physics, 2022, 131 (12), pp.124501. ⟨10.1063/5.0077107⟩. ⟨hal-03619060⟩
titre: Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template
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ref_biblio: Fouzi Haddad, Mustapha Hatti, Khadidja Rahmoun, Katir Ziouche. Selective Surfaces for Photo-Thermal Conversion for Medium Solar Temperature Applications. International Journal of Heat and Technology, 2022, 40 (1), pp.219-224. ⟨10.18280/ijht.400126⟩. ⟨hal-03662793⟩
titre: Selective Surfaces for Photo-Thermal Conversion for Medium Solar Temperature Applications
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ref_biblio: Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub. Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors. Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩. ⟨hal-03777891⟩
titre: Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors
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Conference papers

ref_biblio: Ibrahim Bel-Hadj, Zahia Bougrioua, K. Ziouche. Planar Micro-thermoelectric Generators Based on Cu55Ni45 and Ni90Cr10 Thermocouples for IoT Applications. International Conference on Artificial Intelligence in Renewable Energetic Systems (IC-AIRES 2022), Nov 2022, Tamanghasset, Algeria. pp.91-98, ⟨10.1007/978-3-031-21216-1_10⟩. ⟨hal-04068845⟩
titre: Planar Micro-thermoelectric Generators Based on Cu55Ni45 and Ni90Cr10 Thermocouples for IoT Applications
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ref_biblio: Amine Abdelkader Guermoudi, Pierre-Yves Cresson, Katir Ziouche, A. Ouldabbas, T. Lasri. Measurement of Silicon dioxide thin film thermal conductivity using the 3-omega method. 2nd International Seminar in Industrial Engineering and Applied Mathematics, (ISIEAM’2022), Oct 2022, Skikda, Algeria. ⟨hal-04540668⟩
titre: Measurement of Silicon dioxide thin film thermal conductivity using the 3-omega method
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ref_biblio: Pierre Ruterana, Marie Pierre Chauvat, Magali Morales, Farid Medjdoub, Piero Gamarra, et al.. Optimized ohmic contacts for InAlGaN/GaN HEMTs. ASDAM 2022 - 14th International Conference on Advanced Semiconductor Devices and Microsystems, Oct 2022, Smolenice, Slovakia. pp.1-8, ⟨10.1109/ASDAM55965.2022.9966781⟩. ⟨hal-03930667⟩
titre: Optimized ohmic contacts for InAlGaN/GaN HEMTs
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ref_biblio: Christian Huber, S. Regensburger, E. Bahat-Treidel, F Medjdoub, Jens Baringhaus. [Invited] Process challenges and perspectives of vertical GaN power transistors on foreign substrates. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829109⟩
titre: [Invited] Process challenges and perspectives of vertical GaN power transistors on foreign substrates
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ref_biblio: Jash Mehta, Idriss Abid, Reda Elwaradi, Yvon Cordier, F Medjdoub. AlGaN channel high electron mobility transistors on bulk AlN substrate. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829060⟩
titre: AlGaN channel high electron mobility transistors on bulk AlN substrate
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ref_biblio: S Venkatachalam, Kathia Harrouche, François Grandpierron, Stefan Degroote, Marianne Germain, et al.. Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829010⟩
titre: Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field
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ref_biblio: Elodie Carneiro, Stéphane Rennesson, S. Tamariz, Fabrice Semond, F Medjdoub. Sub-Micron thick Step-Graded AlGaN Buffer on Silicon with a Buffer Breakdown Field Higher Than 6 MV/cm. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829087⟩
titre: Sub-Micron thick Step-Graded AlGaN Buffer on Silicon with a Buffer Breakdown Field Higher Than 6 MV/cm
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ref_biblio: F Medjdoub. [Invited] Design and fabrication of GaN power devices. IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. ⟨hal-03828862⟩
titre: [Invited] Design and fabrication of GaN power devices
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ref_biblio: Fabrice Semond, Stephanie Rennesson, Sébastian Tamariz, Elodie Carneiro, Jash Mehta, et al.. [Invited] From research to production: how MBE can unlock GaN-on-Si technology. The International Conference on Molecular Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom. ⟨hal-03828770⟩
titre: [Invited] From research to production: how MBE can unlock GaN-on-Si technology
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ref_biblio: Youssef Hamdaoui, Idriss Abid, Katir Ziouche, F Medjdoub. [Invited] Local substrate removal for next generation GaN-on-Silicon power transistors. 14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022, Aug 2022, Hiroshima, Japan. ⟨hal-03828927⟩
titre: [Invited] Local substrate removal for next generation GaN-on-Silicon power transistors
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ref_biblio: F Medjdoub. [Invited] High power-added-efficiency millimeter-wave GaN HEMTs. GaN marathon 2022, Jun 2022, Venice, Italy. ⟨hal-03637096⟩
titre: [Invited] High power-added-efficiency millimeter-wave GaN HEMTs
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ref_biblio: Jash Mehta, Idriss Abid, Julien Bassaler, Julien Pernot, Philippe Ferrandis, et al.. Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate. Compound Semiconductor Week, CSW 2022, Jun 2022, Ann Arbor MI, United States. 2 p. ⟨hal-03828829⟩
titre: Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate
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ref_biblio: Kathia Harrouche, Sri Saran Vankatachalam, Elodie Carneiro, François Grandpierron, F Medjdoub. [Invited] Status and progress of millimeter-wave GaN transistors for next generation high-power radar systems. 8th International Conference on Antennas and Electromagnetic Systems, AES 2022, May 2022, Marrakesh, Morocco. ⟨hal-03682395⟩
titre: [Invited] Status and progress of millimeter-wave GaN transistors for next generation high-power radar systems
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ref_biblio: F Medjdoub, Jash Mehta, Idriss Abid, Yvon Cordier, Fabrice Semond. [Invited] AlGaN Channel HEMTs for High Voltage Applications. MRS Spring Meeting & Exhibit, MRS 2022 spring meeting, May 2022, Honolulu (Online), United States. ⟨hal-03637419⟩
titre: [Invited] AlGaN Channel HEMTs for High Voltage Applications
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ref_biblio: Kathia Harrouche, Sri Saran Vankatachalam, François Grandpierron, Etienne Okada, F Medjdoub. Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V. European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. pp.223, session 5B - B Plasmas & Gas. ⟨hal-03677311⟩
titre: Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V
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ref_biblio: Idriss Abid, Youssef Hamdaoui, Jash Mehta, F Medjdoub. High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures. European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. ⟨hal-03677266⟩
titre: High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures
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ref_biblio: Julien Bassaler, Rémi Comyn, C. Bougerol, Yvon Cordier, F Medjdoub, et al.. Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681788⟩
titre: Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template
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ref_biblio: Reda Elwaradi, C. Bougerol, Jash Mehta, Maud Nemoz, F Medjdoub, et al.. Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681811⟩
titre: Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate
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ref_biblio: Elodie Carneiro, Stephanie Rennesson, Sébastian Tamariz, Fabrice Semond, F Medjdoub. Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681838⟩
titre: Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field
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ref_biblio: F Medjdoub. [Webinar] Towards high performance mm-wave GaN power transistors. pCoE - GaN Research and Development (GRAND) Webinar Series, Indian Institute of technology Madras, Apr 2022, Online, India. ⟨hal-03637279⟩
titre: [Webinar] Towards high performance mm-wave GaN power transistors
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ref_biblio: F Medjdoub. Technological development towards high performance millimeter-wave GaN HEMTs and enhanced reliability. 16th European Microwave Integrated Circuits Conference, EuMIC 2021, EuMIC/EuMC/EuMW, Apr 2022, London, United Kingdom. ⟨hal-03637246⟩
titre: Technological development towards high performance millimeter-wave GaN HEMTs and enhanced reliability
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ref_biblio: F Medjdoub. [Workshop] Electronics. Ganex winter school on the physics and applications of nitrides, Labex Ganex, Mar 2022, Autrans, France. ⟨hal-03637118⟩
titre: [Workshop] Electronics
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Poster communications

ref_biblio: Ibrahim Bel-Hadj, Zahia Bougrioua, Katir Ziouche. Fabrication of planar micro-ThermoElectric Generators integrating a 2.5D thermopile topology. ECT’22, 18th European Thermoelectric Conference, Sep 2022, Barcelona, Spain. ⟨hal-03841130⟩
titre: Fabrication of planar micro-ThermoElectric Generators integrating a 2.5D thermopile topology
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ref_biblio: Katir Ziouche, Ibrahim Bel-Hadj, Z. Bougrioua. Heat Fluxmeter in Silicon technology with low thermal resistance. ECT’22, 18th European Thermoelectric Conference, Sep 2022, Barcelona, Spain. ⟨hal-03841126⟩
titre: Heat Fluxmeter in Silicon technology with low thermal resistance
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2021

Journal articles

ref_biblio: Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, et al.. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs. Microelectronics Reliability, 2021, 123, pp.114199. ⟨10.1016/j.microrel.2021.114199⟩. ⟨hal-03287632⟩
titre: Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
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ref_biblio: Idriss Abid, Jash Mehta, Yvon Cordier, Joff Derluyn, Stefan Degroote, et al.. AlGaN channel high electron mobility transistors with regrown ohmic contacts. Electronics, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩. ⟨hal-03164517⟩
titre: AlGaN channel high electron mobility transistors with regrown ohmic contacts
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ref_biblio: Katir Ziouche, Ibrahim Bel-Hadj, Zahia Bougrioua. Thermoelectric properties of nanostructured porous-polysilicon thin films. Nano Energy, 2021, 80, pp.105553. ⟨10.1016/j.nanoen.2020.105553⟩. ⟨hal-02990079⟩
titre: Thermoelectric properties of nanostructured porous-polysilicon thin films
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ref_biblio: Idriss Abid, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Kai Cheng, et al.. GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal. Applied Physics Express, 2021, 14 (3), pp.036501. ⟨10.35848/1882-0786/abdca0⟩. ⟨hal-03113165⟩
titre: GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal
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ref_biblio: Matteo Meneghini, Carlo de Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, et al.. GaN-based power devices: Physics, reliability, and perspectives. Journal of Applied Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩. ⟨hal-03421528⟩
titre: GaN-based power devices: Physics, reliability, and perspectives
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Conference papers

ref_biblio: Ajay Shanbhag, F Medjdoub, Anjan Chakravorty, Nandita Dasgupta, Amitava Dasgupta. Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs. 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Dec 2021, Monterey, CA, virtual, United States. ⟨10.1109/BCICTS50416.2021.9682203⟩. ⟨hal-03421537⟩
titre: Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs
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ref_biblio: F Medjdoub. GaN RF and power research at IEMN. C3NiT - Centre Day, Swedish Center for III-Nitride Technology, Nov 2021, Linkoping, Sweden. ⟨hal-03508582⟩
titre: GaN RF and power research at IEMN
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ref_biblio: F Medjdoub. [Invited] Prospects of ultrawide bandgap materials and devices. International Union of Materials Research Societies - International Conference in Asia 2021, IUMRS-ICA 2021, Session IX - Semiconductor Materials and Devices, Oct 2021, Jeju Island, South Korea. ⟨hal-03359397⟩
titre: [Invited] Prospects of ultrawide bandgap materials and devices
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ref_biblio: Ekaterina Chikoidze, Amador Perez, Corinne Sartel, Zeyu Chi, Vincent Sallet, et al.. [Invited] Gallia(Ga2O3): fascinating electronic properties. International Union of Materials Research Societies - International Conference in Asia 2021, IUMRS-ICA 2021, Session MoJ1 - Power Semiconductor Materials and Devices, Oct 2021, Jeju Island, South Korea. ⟨hal-03373733⟩
titre: [Invited] Gallia(Ga2O3): fascinating electronic properties
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ref_biblio: Kathia Harrouche, W Rili, Elodie Carneiro, Jash Mehta, Idriss Abid, et al.. [Invited] Preindustrial GaN devices developed at the nanofabrication center of IEMN. Transducers 2021, Jun 2021, online, France. ⟨hal-03256885⟩
titre: [Invited] Preindustrial GaN devices developed at the nanofabrication center of IEMN
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ref_biblio: Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. Above 70% PAE in Q-band with AlN/GaN HEMTs structures. WOCSDICE2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03279173⟩
titre: Above 70% PAE in Q-band with AlN/GaN HEMTs structures
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ref_biblio: Jash Mehta, Idriss Abid, Thi Huong Ngo, Yvon Cordier, F Medjdoub. AlGaN/GaN HEMTs on AlN substrate for power electronics. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom. ⟨hal-03279160⟩
titre: AlGaN/GaN HEMTs on AlN substrate for power electronics
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ref_biblio: F Medjdoub. [Invited] Reliability Oriented Design of GaN Transistor. Material Research Society, Apr 2021, phoenix, United States. ⟨hal-03298846⟩
titre: [Invited] Reliability Oriented Design of GaN Transistor
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Special issue

ref_biblio: F Medjdoub. Editorial for the special issue on wide bandgap based devices: design, fabrication and applications. Micromachines, 12 (1), 2021, Wide bandgap based devices: design, fabrication and applications, ⟨10.3390/mi12010083⟩. ⟨hal-03111514⟩
titre: Editorial for the special issue on wide bandgap based devices: design, fabrication and applications
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2020

Journal articles

ref_biblio: E. Chikoidze, T. Tchelidze, C. Sartel, Z. Chi, R. Kabouche, et al.. Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3. Materials Today Physics, 2020, 15, 100263, 9 p. ⟨10.1016/j.mtphys.2020.100263⟩. ⟨hal-02984814⟩
titre: Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3
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ref_biblio: Alessandro Caria, Carlo de Santi, Ezgi Dogmus, F Medjdoub, Enrico Zanoni, et al.. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors. Electronics, 2020, 9 (11), pp.1840. ⟨10.3390/electronics9111840⟩. ⟨hal-03028077⟩
titre: Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors
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ref_biblio: Sven Besendörfer, Elke Meissner, F Medjdoub, Joff Derluyn, Jochen Friedrich, et al.. The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. Scientific Reports, 2020, 10 (1), 17252, 12 p. ⟨10.1038/s41598-020-73977-2⟩. ⟨hal-03028120⟩
titre: The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
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ref_biblio: Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Gaudenzio Meneghesso, Idriss Abid, et al.. High breakdown voltage and low buffer trapping in superlattice GaN-on-silicon heterostructures for high voltage applications. Materials, 2020, 13 (19), pp.4271. ⟨10.3390/ma13194271⟩. ⟨hal-03028113⟩
titre: High breakdown voltage and low buffer trapping in superlattice GaN-on-silicon heterostructures for high voltage applications
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ref_biblio: Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, et al.. Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures. Physica Status Solidi A (applications and materials science), 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩. ⟨hal-02363323⟩
titre: Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures
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ref_biblio: Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo de Santi, Davide Benazzi, et al.. Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment. Micromachines, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩. ⟨hal-03028138⟩
titre: Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment
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ref_biblio: S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. Freitas, et al.. Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics, 2020, 127 (1), pp.015701. ⟨10.1063/1.5129248⟩. ⟨hal-02429980⟩
titre: Vertical breakdown of GaN on Si due to V-pits
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ref_biblio: Katir Ziouche, Ibrahim Bel-Hadj, Zahia Bougrioua. Utilisation du silicium nanostructuré dans un générateur thermoélectrique pour la réduction des pertes thermiques. Entropie : thermodynamique – énergie – environnement – économie, 2020, 1 (1), 10 p. ⟨10.21494/ISTE.OP.2020.0493⟩. ⟨hal-02906722⟩
titre: Utilisation du silicium nanostructuré dans un générateur thermoélectrique pour la réduction des pertes thermiques
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Conference papers

ref_biblio: Riad Kabouche, Kathia Harrouche, F Medjdoub. Vers des composants GaN fiables délivrant de haute performance en gamme d'ondes millimétriques. RF & Microwave 2020, 9ème Salon Radiofréquences, Hyperfréquences, Wireless, CEM et Fibre Optique, Sep 2020, Paris, France. ⟨hal-03342668⟩
titre: Vers des composants GaN fiables délivrant de haute performance en gamme d'ondes millimétriques
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ref_biblio: Idriss Abid, Riad Kabouche, F Medjdoub, Sven Besendörfer, Elke Meissner, et al.. Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020), Sep 2020, Vienne, Austria. pp.310-312, ⟨10.1109/ISPSD46842.2020.9170170⟩. ⟨hal-03044195⟩
titre: Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure
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ref_biblio: Tahar Kadi, Marc Duquennoy, Katir Ziouche, Mohammadi Ouaftouh, Nikolay Smagin. Dispersion of IDT-induced high-frequency surface acoustic waves - Application to the mechanical and dimensional characterization of mesoporous silicon. IEEE International Ultrasonics Symposium 2020, IUS2020, Sep 2020, Las Vegas, United States. pp.4, ⟨10.1109/IUS46767.2020.9251563⟩. ⟨hal-03322825⟩
titre: Dispersion of IDT-induced high-frequency surface acoustic waves - Application to the mechanical and dimensional characterization of mesoporous silicon
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ref_biblio: Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz. IEEE/MTT-S International Microwave Symposium (IMS 2020), Aug 2020, Los Angeles, CA, United States. Session Tu3H - Advances in Microwave Semiconductor Devices, paper Tu3H-2, 285-288, ⟨10.1109/IMS30576.2020.9223971⟩. ⟨hal-03043653⟩
titre: High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz
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ref_biblio: Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, et al.. Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs. 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2020, Singapour, Singapore. pp.1-6, ⟨10.1109/IPFA49335.2020.9260793⟩. ⟨hal-03043453⟩
titre: Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
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ref_biblio: R. Kabouche, K. Harrouche, Etienne Okada, F Medjdoub. Short-term reliability of high performance Q-band AlN/GaN HEMTs. IEEE International Reliability Physics Symposium (IRPS 2020), Apr 2020, Dallas, TX, United States. pp.1-6, ⟨10.1109/IRPS45951.2020.9129322⟩. ⟨hal-03044147⟩
titre: Short-term reliability of high performance Q-band AlN/GaN HEMTs
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ref_biblio: F Medjdoub. [Invited] AlN-based power devices. 56th Annual Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2020, Feb 2020, Palm Springs, CA, United States. ⟨hal-03342714⟩
titre: [Invited] AlN-based power devices
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Book sections

ref_biblio: Kathia Harrouche, F Medjdoub. GaN-based HEMTs for mm-wave applications. Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices, 2020, ISBN 978-3-527-34710-0 ; e-ISBN 978-3-527-82525-7. ⟨hal-03287288⟩
titre: GaN-based HEMTs for mm-wave applications
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Other publications

ref_biblio: Markus Behet, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub. Optimising GaN heterostructures for 5G. Compound Semiconductors, 26, 1, 2020. ⟨hal-03342380⟩
titre: Optimising GaN heterostructures for 5G
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Poster communications

ref_biblio: Ibrahim Bel-Hadj, Zahia Bougrioua, K. Ziouche. Improvement of performance of a planar micro-thermoelectric generator for energy harvesting Application. 3rd IEEE Sensors France International Workshop, Nov 2020, Lille, France. , 2020. ⟨hal-03901959⟩
titre: Improvement of performance of a planar micro-thermoelectric generator for energy harvesting Application
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2019

Journal articles

ref_biblio: Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cédric Masante, et al.. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates. Micromachines, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩. ⟨hal-02344992⟩
titre: High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
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ref_biblio: Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, V. Gao Zhan, Carlo de Santi, et al.. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. Microelectronics Reliability, 2019, 100-101, pp.113388. ⟨10.1016/j.microrel.2019.06.080⟩. ⟨hal-02356749⟩
titre: Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
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ref_biblio: Georges Pavlidis, Samuel Kim, Idriss Abid, Malek Zegaoui, F Medjdoub, et al.. The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs. IEEE Electron Device Letters, 2019, 40 (7), pp.1060-1063. ⟨10.1109/LED.2019.2915984⟩. ⟨hal-02356736⟩
titre: The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs
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ref_biblio: Riad Kabouche, Romain Pecheux, Kathia Harrouche, Etienne Okada, F Medjdoub, et al.. High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation. International Journal of High Speed Electronics and Systems, 2019, 28 (01n02), pp.1940003. ⟨10.1142/S0129156419400032⟩. ⟨hal-02356733⟩
titre: High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
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ref_biblio: M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, et al.. Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩
titre: Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs
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ref_biblio: Jun Lu, Jr-Tai Chen, Martin Dahlqvist, Riad Kabouche, F Medjdoub, et al.. Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors. Applied Physics Letters, 2019, 115 (22), pp.221601. ⟨10.1063/1.5123374⟩. ⟨hal-02400602⟩
titre: Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
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ref_biblio: Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, et al.. Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability, 2019, 100-101, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩. ⟨hal-02356751⟩
titre: Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
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ref_biblio: Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation. IEEE Journal of the Electron Devices Society, 2019, 7, pp.1145-1150. ⟨10.1109/JEDS.2019.2952314⟩. ⟨hal-02357492⟩
titre: High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation
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Conference papers

ref_biblio: Kamel Haddadi, Christophe Loyez, Katir Ziouche. Six-port technology for millimeter-wave metrology. 6th IEEE-Antennas-and-Propagation-Society (IEEE AP-S) Topical Meeting on Antenna Measurements & Applications (CAMA), Oct 2019, Bali, Indonesia. pp.81-84, ⟨10.1109/CAMA47423.2019.8959806⟩. ⟨hal-03224646⟩
titre: Six-port technology for millimeter-wave metrology
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ref_biblio: Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, Veronica Gao Zhan, Carlo de Santi, et al.. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048726⟩
titre: Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
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ref_biblio: Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, et al.. Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048194⟩
titre: Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment
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ref_biblio: F Medjdoub. [Invited] GaN integration on silicon for high power devices. European Materials Research Society (E-MRS) Fall 2019, Sep 2019, Warsaw, Poland. ⟨hal-03287384⟩
titre: [Invited] GaN integration on silicon for high power devices
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ref_biblio: F Medjdoub. [Invited] Towards higher voltage in III-Nitride devices. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287436⟩
titre: [Invited] Towards higher voltage in III-Nitride devices
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ref_biblio: Riad Kabouche, Idriss Abid, Malek Zegaoui, Roland Püsche, Joff Derluyn, et al.. Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287421⟩
titre: Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures
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ref_biblio: S Besendörfer, E Meissner, F Medjdoub. Direct observation of V-pit induced vertical n-type columns disrupting vertical breakdown of AlGaN/GaN-HEMT heterostructures on Si. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287411⟩
titre: Direct observation of V-pit induced vertical n-type columns disrupting vertical breakdown of AlGaN/GaN-HEMT heterostructures on Si
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ref_biblio: Idriss Abid, Riad Kabouche, Malek Zegaoui, C. Bougerol, Rémi Comyn, et al.. Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle WA, United States. ⟨hal-03287398⟩
titre: Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates
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ref_biblio: Carlo de Santi, Alessandro Caria, N Renso, Ezgi Dogmus, Malek Zegaoui, et al.. Photon-driven degradation processes in GaN-based optoelectronic devices. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287430⟩
titre: Photon-driven degradation processes in GaN-based optoelectronic devices
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ref_biblio: K. Harrouche, Riad Kabouche, Malek Zegaoui, F Medjdoub. Scaling of AlN/GaN HEMT for millimeter-wave power applications. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356889⟩
titre: Scaling of AlN/GaN HEMT for millimeter-wave power applications
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ref_biblio: Idriss Abid, Riad Kabouche, Malek Zegaoui, C. Bougerol, Rémi Comyn, et al.. AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356886⟩
titre: AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer
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ref_biblio: Matteo Borga, Matteo Meneghini, Davide Benazzi, Roland Püsche, Joff Derluyn, et al.. GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356883⟩
titre: GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current
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ref_biblio: Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Riad Kabouche, Idriss Abid, et al.. Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356881⟩
titre: Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V
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ref_biblio: Katir Ziouche, Ibrahim Bel-Hadj, Z. Bougrioua. Optimisation de la collecte de chaleur d'un microgénérateur thermoélectrique planaire. CIFQ2019, 14° Colloque Int. Franco-Québécois en Energie, Jun 2019, Baie St-Paut, Canada. proceedings, ART-055, pp. 1-6. ⟨hal-02414536⟩
titre: Optimisation de la collecte de chaleur d'un microgénérateur thermoélectrique planaire
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ref_biblio: Ibrahim Bel-Hadj, Z. Bougrioua, Katir Ziouche. Modélisation et optimisation de la structure géométrique d'un microgénérateur thermoélectrique planaire. TELECOM'2019 & 11èmes JFMMA, Jun 2019, Saidia, Maroc. ⟨hal-02414487⟩
titre: Modélisation et optimisation de la structure géométrique d'un microgénérateur thermoélectrique planaire
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ref_biblio: Riad Kabouche, Idriss Abid, Malek Zegaoui, Kai Cheng, F Medjdoub. Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States. ⟨hal-02356891⟩
titre: Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
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Poster communications

ref_biblio: Zahia Bougrioua, Ibrahim Bel-Hadj, Katir Ziouche. Optimizing heat harvesting in a membrane based planar µTEG: modelling and fabrication, & vice versa. ECT 2019 – 17th European Conference on Thermoelectrics, Sep 2019, Limassol, Cyprus. . ⟨hal-02906736⟩
titre: Optimizing heat harvesting in a membrane based planar µTEG: modelling and fabrication, & vice versa
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ref_biblio: Ibrahim Bel-Hadj, Zahia Bougrioua, Katir Ziouche. Modélisation et optimisation d'un microgénérateur thermoélectrique planaire. Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France. , 2019. ⟨hal-03888756⟩
titre: Modélisation et optimisation d'un microgénérateur thermoélectrique planaire
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2018

Journal articles

ref_biblio: Jonathan Almirón, Hermann Alcazar, Rossibel Churata, Francine Roudet, Katir Ziouche, et al.. Effect of impregnation solutions on the synthesis of Ni-Cu/Al 2 O 3 catalyst to obtain carbon nanofibers. Materials Research Express, 2018, 5 (12), pp.125010. ⟨10.1088/2053-1591/aadeb2⟩. ⟨hal-03577588⟩
titre: Effect of impregnation solutions on the synthesis of Ni-Cu/Al 2 O 3 catalyst to obtain carbon nanofibers
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ref_biblio: Stéphanie Rennesson, Mathieu Leroux, Mohamed Al Khalfioui, Maud Nemoz, Sebastien Chenot, et al.. Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE. Physica Status Solidi A (applications and materials science), 2018, 215 (9), pp.1700640. ⟨10.1002/pssa.201700640⟩. ⟨hal-02322484⟩
titre: Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE
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ref_biblio: Carlo de Santi, Alessandro Caria, Nicola Renso, Ezgi Dogmus, Malek Zegaoui, et al.. Evidence of optically induced degradation in gallium nitride optoelectronic devices. Applied Physics Express, 2018, 11 (11), pp.111002. ⟨10.7567/APEX.11.111002⟩. ⟨hal-02356737⟩
titre: Evidence of optically induced degradation in gallium nitride optoelectronic devices
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ref_biblio: Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, et al.. GaN-Based Laser Wireless Power Transfer System. Materials, 2018, 11 (1), pp.153. ⟨10.3390/ma11010153⟩. ⟨hal-02356738⟩
titre: GaN-Based Laser Wireless Power Transfer System
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ref_biblio: Ezgi Dogmus, Malek Zegaoui, F Medjdoub. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap. Applied Physics Express, 2018, 11 (3), pp.034102. ⟨10.7567/APEX.11.034102⟩. ⟨hal-02356739⟩
titre: GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap
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ref_biblio: Souheyla Fakiri, Alex Montagne, Khadidja Rahmoun, Alain Iost, Katir Ziouche. Mechanical properties of porous silicon and oxidized porous silicon by nanoindentation technique. Materials Science and Engineering: A, 2018, 711, pp.470-475. ⟨10.1016/j.msea.2017.11.013⟩. ⟨hal-03183489⟩
titre: Mechanical properties of porous silicon and oxidized porous silicon by nanoindentation technique
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Conference papers

ref_biblio: Idriss Abid, Riad Kabouche, Malek Zegaoui, F Medjdoub. [Invited] Next generation of GaN-on-Silicon power devices. 4th IEEE International Conference on Emerging Electronics, Dec 2018, Bengaluru, India. ⟨hal-03287820⟩
titre: [Invited] Next generation of GaN-on-Silicon power devices
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ref_biblio: R Pecheux, Riad Kabouche, Malek Zegaoui, J T Chen, O Kordina, et al.. First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects. International Workshop on Nitride Semiconductors, IWN 2018, Nov 2018, Kanazawa, Japan. ⟨hal-03288139⟩
titre: First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects
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ref_biblio: Alaleh Tajalli, Idriss Abid, Riad Kabouche, Malek Zegaoui, Matteo Meneghini, et al.. High voltage GaN-on-silicon with low-trapping up to 1200 V. International Workshop on Nitride Semiconductors, Nov 2018, Kanazawa, Japan. ⟨hal-03288133⟩
titre: High voltage GaN-on-silicon with low-trapping up to 1200 V
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ref_biblio: R Pecheux, Riad Kabouche, Malek Zegaoui, F Medjdoub. [Invited] Novel heterostructures for millimeter-wave GaN devices. Asia-Pacific Microwave Conference (APMC), Nov 2018, kyoto, Japan. ⟨hal-03287819⟩
titre: [Invited] Novel heterostructures for millimeter-wave GaN devices
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ref_biblio: Romain Pécheux, Riad Kabouche, Malek Zegaoui, J T Chen, O Kordina, et al.. GaN-based transistors using buffer-free heterostructures for next generation RF devices. 9th Wide Band Gap Semiconductor and Components Workshop, Oct 2018, Harwell, Ireland. ⟨hal-02356908⟩
titre: GaN-based transistors using buffer-free heterostructures for next generation RF devices
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ref_biblio: Riad Kabouche, Joff Derluyn, Roland Püsche, Stefan Degroote, Marianne Germain, et al.. Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.5-8, ⟨10.23919/EuMIC.2018.8539962⟩. ⟨hal-02356753⟩
titre: Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
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ref_biblio: Mohamed Bouslama, Ahmad Al Hajjar, Raphaël Sommet, Jean-Christophe Nallatamby, F Medjdoub. Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.333-336, ⟨10.23919/EuMIC.2018.8539941⟩. ⟨hal-02356757⟩
titre: Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate
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ref_biblio: Alaleh Tajalli, Idriss Abid, Riad Kabouche, Malek Zegaoui, Matteo Meneghini, et al.. Towards low-trapping GaN-on-silicon material system for 1200 V applications. European Material Research Society Fall 2018, Sep 2018, Warsaw, Poland. ⟨hal-03287736⟩
titre: Towards low-trapping GaN-on-silicon material system for 1200 V applications
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ref_biblio: Farah Bouazzaoui, Marie Pierre Chauvat, Magali Morales, Malek Zegaoui, F Medjdoub, et al.. Optimized ohmic contacts for InAlGaN/GaN HEMTs. International Symposium on Growth of III-Nitrides, Aug 2018, Warsaw, Poland. ⟨hal-03287822⟩
titre: Optimized ohmic contacts for InAlGaN/GaN HEMTs
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ref_biblio: Romain Pécheux, Riad Kabouche, Etienne Okada, Malek Zegaoui, F Medjdoub. C-doped AlN/GaN HEMTs for High efficiency mmW applications. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2018), Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430021⟩. ⟨hal-02356756⟩
titre: C-doped AlN/GaN HEMTs for High efficiency mmW applications
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ref_biblio: Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, et al.. Degradation of InGaN-based optoelectronic devices under electrical and optical stress. 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE), Jun 2018, Naples, Italy. ⟨hal-03288175⟩
titre: Degradation of InGaN-based optoelectronic devices under electrical and optical stress
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ref_biblio: Romain Pécheux, Guillaume Ducournau, Riad Kabouche, Etienne Okada, Christian Mondolot, et al.. Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band. 16èmes Journées Nano, Micro, et Optoélectronique, JNMO 2018, Jun 2018, Agay, France. ⟨hal-02356912⟩
titre: Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band
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ref_biblio: Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, et al.. Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices. COMPOUND SEMICONDUCTOR WEEK 2018, May 2018, Cambridge, United States. ⟨hal-03287725⟩
titre: Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices
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ref_biblio: Riad Kabouche, Romain Pecheux, Léna Chenu, Tommy Defais, Malek Zegaoui, et al.. [Invited] GaN HEMTs for millimeter-wave applications: Status and Challenges. Microwave and Millimeter-wave GaN - Wafer to IC Workshop, Apr 2018, Cardiff, United Kingdom. ⟨hal-03287821⟩
titre: [Invited] GaN HEMTs for millimeter-wave applications: Status and Challenges
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ref_biblio: Riad Kabouche, Romain Pecheux, Malek Zegaoui, F Medjdoub. [Invited] Current status and challenges of GaN millimeter-wave transistors. GaN Marathon 2.0, Apr 2018, Padova, Italy. ⟨hal-03287817⟩
titre: [Invited] Current status and challenges of GaN millimeter-wave transistors
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ref_biblio: Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, et al.. Degradation processes and origin in InGaN-based high-power photodetectors. Gallium Nitride Materials and Devices XIII, Jan 2018, San Francisco, United States. pp.54, ⟨10.1117/12.2289466⟩. ⟨hal-02356755⟩
titre: Degradation processes and origin in InGaN-based high-power photodetectors
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Other publications

ref_biblio: Gaudenzio Meneghesso, Joff Derluyn, Elke Meissner, F Medjdoub, Abhishek Banerjee, et al.. Pushing the limits of GaN-based power devices and power electronics. 2018, pp.52-55. ⟨hal-03287707⟩
titre: Pushing the limits of GaN-based power devices and power electronics
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