Publications HAL de la structure 1296;1066983;1079230

2023

Book sections

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Matteo Meneghini, Srabanti Chowdhury, Joff Derluyn, Farid Medjdoub, Dong Ji, et al.. 15. GaN-Based Lateral and Vertical Devices. Massimo Rudan; Rossella Brunetti; Susanna Reggiani. Springer Handbook of Semiconductor Devices, Springer International Publishing, pp.525-578, 2023, Springer Handbooks, ⟨10.1007/978-3-030-79827-7_15⟩. ⟨hal-03875409⟩
titre
15. GaN-Based Lateral and Vertical Devices
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2022

Journal articles

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Kathia Harrouche, Srisaran Venkatachalam, François Grandpierron, Etienne Okada, Farid Medjdoub. Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances. Applied Physics Express, 2022, 15 (11), pp.116504. ⟨10.35848/1882-0786/ac9c46⟩. ⟨hal-03828718⟩
titre
Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances
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https://hal.archives-ouvertes.fr/hal-03828718/file/Harrouche%2Bet%2Bal_2022_Appl._Phys._Express_10.35848_1882-0786_ac9c46.pdf BibTex
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Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, F Medjdoub, et al.. Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template. Journal of Applied Physics, 2022, 131 (12), pp.124501. ⟨10.1063/5.0077107⟩. ⟨hal-03619060⟩
titre
Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template
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https://hal.archives-ouvertes.fr/hal-03619060/file/Bassaler%20JAP%202022.pdf BibTex
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Fouzi Haddad, Mustapha Hatti, Khadidja Rahmoun, Katir Ziouche. Selective Surfaces for Photo-Thermal Conversion for Medium Solar Temperature Applications. International Journal of Heat and Technology, 2022, 40 (1), pp.219-224. ⟨10.18280/ijht.400126⟩. ⟨hal-03662793⟩
titre
Selective Surfaces for Photo-Thermal Conversion for Medium Solar Temperature Applications
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Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub. Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors. Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩. ⟨hal-03777891⟩
titre
Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors
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https://hal.archives-ouvertes.fr/hal-03777891/file/Abid2022_micromachines-13-01519-1.pdf BibTex
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Ibrahim Bel-Hadj, Zahia Bougrioua, Katir Ziouche. Metal-based folded-thermopile for 2.5D micro-thermoelectric generators. Sensors and Actuators A: Physical , 2022, pp.114090. ⟨10.1016/j.sna.2022.114090⟩. ⟨hal-03899754⟩
titre
Metal-based folded-thermopile for 2.5D micro-thermoelectric generators
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Conference papers

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Pierre Ruterana, Marie Pierre Chauvat, Magali Morales, Farid Medjdoub, Piero Gamarra, et al.. Optimized ohmic contacts for InAlGaN/GaN HEMTs. ASDAM 2022 - 14th International Conference on Advanced Semiconductor Devices and Microsystems, Oct 2022, Smolenice, Slovakia. pp.1-8, ⟨10.1109/ASDAM55965.2022.9966781⟩. ⟨hal-03930667⟩
titre
Optimized ohmic contacts for InAlGaN/GaN HEMTs
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https://hal.science/hal-03930667/file/OhmiContacts%20PRuteranaAsdam2022.pdf BibTex
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Jash Mehta, Idriss Abid, Reda Elwaradi, Yvon Cordier, F Medjdoub. AlGaN channel high electron mobility transistors on bulk AlN substrate. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829060⟩
titre
AlGaN channel high electron mobility transistors on bulk AlN substrate
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https://hal.archives-ouvertes.fr/hal-03829060/file/abstract_IWN_vfinal.pdf BibTex
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S Venkatachalam, Kathia Harrouche, François Grandpierron, Stefan Degroote, Marianne Germain, et al.. Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829010⟩
titre
Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field
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Christian Huber, S. Regensburger, E. Bahat-Treidel, F Medjdoub, Jens Baringhaus. Process challenges and perspectives of vertical GaN power transistors on foreign substrates. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829109⟩
titre
Process challenges and perspectives of vertical GaN power transistors on foreign substrates
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https://hal.archives-ouvertes.fr/hal-03829109/file/Abstract_Hu_IWN_2022_submission.pdf BibTex
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Elodie Carneiro, Stéphane Rennesson, S. Tamariz, Fabrice Semond, F Medjdoub. Sub-Micron thick Step-Graded AlGaN Buffer on Silicon with a Buffer Breakdown Field Higher Than 6 MV/cm. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829087⟩
titre
Sub-Micron thick Step-Graded AlGaN Buffer on Silicon with a Buffer Breakdown Field Higher Than 6 MV/cm
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https://hal.archives-ouvertes.fr/hal-03829087/file/Elodie_Abstract_IWN_2022_final.pdf BibTex
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F Medjdoub. Design and fabrication of GaN power devices. IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. ⟨hal-03828862⟩
titre
Design and fabrication of GaN power devices
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Fabrice Semond, Stephanie Rennesson, Sébastian Tamariz, Elodie Carneiro, Jash Mehta, et al.. [Invited] From research to production: how MBE can unlock GaN-on-Si technology. The International Conference on Molecular Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom. ⟨hal-03828770⟩
titre
[Invited] From research to production: how MBE can unlock GaN-on-Si technology
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Youssef Hamdaoui, Idriss Abid, Katir Ziouche, F Medjdoub. Local substrate removal for next generation GaN-on-Silicon power transistors. 14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022, Aug 2022, Hiroshima, Japan. ⟨hal-03828927⟩
titre
Local substrate removal for next generation GaN-on-Silicon power transistors
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https://hal.archives-ouvertes.fr/hal-03828927/file/Abstract_TWHM_Medjdoub.pdf BibTex
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F Medjdoub. High power-added-efficiency millimeter-wave GaN HEMTs: [Invited]. GaN marathon 2022, Jun 2022, Venice, Italy. ⟨hal-03637096⟩
titre
High power-added-efficiency millimeter-wave GaN HEMTs
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Jash Mehta, Idriss Abid, Julien Bassaler, Julien Pernot, Philippe Ferrandis, et al.. Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate. Compound Semiconductor Week, CSW 2022, Jun 2022, Ann Arbor, MI, United States. 2 p. ⟨hal-03828829⟩
titre
Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate
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https://hal.archives-ouvertes.fr/hal-03828829/file/CSW-22_abstract__final.pdf BibTex
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Kathia Harrouche, Sri Saran Vankatachalam, Elodie Carneiro, François Grandpierron, F Medjdoub. Status and progress of millimeter-wave GaN transistors for next generation high-power radar systems: [Invited]. 8th International Conference on Antennas and Electromagnetic Systems, AES 2022, May 2022, Marrakesh, Morocco. ⟨hal-03682395⟩
titre
Status and progress of millimeter-wave GaN transistors for next generation high-power radar systems
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F Medjdoub, Jash Mehta, Idriss Abid, Yvon Cordier, Fabrice Semond. AlGaN Channel HEMTs for High Voltage Applications. MRS Spring Meeting & Exhibit, MRS 2022 spring meeting, May 2022, Honolulu (Online), United States. ⟨hal-03637419⟩
titre
AlGaN Channel HEMTs for High Voltage Applications
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Idriss Abid, Youssef Hamdaoui, Jash Mehta, F Medjdoub. High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures. European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. ⟨hal-03677266⟩
titre
High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures
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Kathia Harrouche, Sri Saran Vankatachalam, François Grandpierron, Etienne Okada, F Medjdoub. Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V. European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. pp.223, session 5B - B Plasmas & Gas. ⟨hal-03677311⟩
titre
Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V
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Julien Bassaler, Rémi Comyn, C. Bougerol, Yvon Cordier, F Medjdoub, et al.. Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681788⟩
titre
Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template
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Reda Elwaradi, C. Bougerol, Jash Mehta, Maud Nemoz, F Medjdoub, et al.. Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681811⟩
titre
Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate
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Elodie Carneiro, Stephanie Rennesson, Sébastian Tamariz, Fabrice Semond, F Medjdoub. Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681838⟩
titre
Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field
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F Medjdoub. [Webinar] Towards high performance mm-wave GaN power transistors. pCoE - GaN Research and Development (GRAND) Webinar Series, Indian Institute of technology Madras, Apr 2022, Online, India. ⟨hal-03637279⟩
titre
[Webinar] Towards high performance mm-wave GaN power transistors
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F Medjdoub. Technological development towards high performance millimeter-wave GaN HEMTs and enhanced reliability. 16th European Microwave Integrated Circuits Conference, EuMIC 2021, EuMIC/EuMC/EuMW, Apr 2022, London, United Kingdom. ⟨hal-03637246⟩
titre
Technological development towards high performance millimeter-wave GaN HEMTs and enhanced reliability
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F Medjdoub. [Workshop] Electronics. Ganex winter school on the physics and applications of nitrides, Labex Ganex, Mar 2022, Autrans, France. ⟨hal-03637118⟩
titre
[Workshop] Electronics
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Poster communications

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Katir Ziouche, Ibrahim Bel-Hadj, Z. Bougrioua. Heat Fluxmeter in Silicon technology with low thermal resistance. ECT’22, 18th European Thermoelectric Conference, Sep 2022, Barcelona, Spain. ⟨hal-03841126⟩
titre
Heat Fluxmeter in Silicon technology with low thermal resistance
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Ibrahim Bel-Hadj, Zahia Bougrioua, Katir Ziouche. Fabrication of planar micro-ThermoElectric Generators integrating a 2.5D thermopile topology. ECT’22, 18th European Thermoelectric Conference, Sep 2022, Barcelona, Spain. ⟨hal-03841130⟩
titre
Fabrication of planar micro-ThermoElectric Generators integrating a 2.5D thermopile topology
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2021

Journal articles

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Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, et al.. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs. Microelectronics Reliability, 2021, 123, pp.114199. ⟨10.1016/j.microrel.2021.114199⟩. ⟨hal-03287632⟩
titre
Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-03287632/file/MR_20201201.pdf BibTex
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Idriss Abid, Jash Mehta, Yvon Cordier, Joff Derluyn, Stefan Degroote, et al.. AlGaN channel high electron mobility transistors with regrown ohmic contacts. Electronics, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩. ⟨hal-03164517⟩
titre
AlGaN channel high electron mobility transistors with regrown ohmic contacts
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https://hal.archives-ouvertes.fr/hal-03164517/file/electronics-10-00635.pdf BibTex
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Katir Ziouche, Ibrahim Bel-Hadj, Zahia Bougrioua. Thermoelectric properties of nanostructured porous-polysilicon thin films. Nano Energy, 2021, 80, pp.105553. ⟨10.1016/j.nanoen.2020.105553⟩. ⟨hal-02990079⟩
titre
Thermoelectric properties of nanostructured porous-polysilicon thin films
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https://hal.archives-ouvertes.fr/hal-02990079/file/Ziouche_NANOEN_105553_2021.pdf BibTex
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Idriss Abid, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Kai Cheng, et al.. GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal. Applied Physics Express, 2021, 14 (3), pp.036501. ⟨10.35848/1882-0786/abdca0⟩. ⟨hal-03113165⟩
titre
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal
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https://hal.archives-ouvertes.fr/hal-03113165/file/Abid_2021_Appl._Phys._Express_14_036501.pdf BibTex
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Matteo Meneghini, Carlo de Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, et al.. GaN-based power devices: Physics, reliability, and perspectives. Journal of Applied Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩. ⟨hal-03421528⟩
titre
GaN-based power devices: Physics, reliability, and perspectives
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https://hal.archives-ouvertes.fr/hal-03421528/file/JAP%20Tutorial%20HEMT%20FINAL.pdf BibTex

Conference papers

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Ajay Shanbhag, F Medjdoub, Anjan Chakravorty, Nandita Dasgupta, Amitava Dasgupta. Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs. 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Dec 2021, Monterey, CA, virtual, United States. ⟨10.1109/BCICTS50416.2021.9682203⟩. ⟨hal-03421537⟩
titre
Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-03421537/file/Ajay_BCICTS_2021.pdf BibTex
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F Medjdoub. GaN RF and power research at IEMN. C3NiT - Centre Day, Swedish Center for III-Nitride Technology, Nov 2021, Linkoping, Sweden. ⟨hal-03508582⟩
titre
GaN RF and power research at IEMN
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Ekaterina Chikoidze, Amador Perez, Corinne Sartel, Zeyu Chi, Vincent Sallet, et al.. Gallia(Ga2O3): fascinating electronic properties: [Invited]. International Union of Materials Research Societies - International Conference in Asia 2021, IUMRS-ICA 2021, Session MoJ1 - Power Semiconductor Materials and Devices, Oct 2021, Jeju Island, South Korea. ⟨hal-03373733⟩
titre
Gallia(Ga2O3): fascinating electronic properties
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F Medjdoub. Prospects of ultrawide bandgap materials and devices: [Invited]. International Union of Materials Research Societies - International Conference in Asia 2021, IUMRS-ICA 2021, Session IX - Semiconductor Materials and Devices, Oct 2021, Jeju Island, South Korea. ⟨hal-03359397⟩
titre
Prospects of ultrawide bandgap materials and devices
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Kathia Harrouche, W Rili, Elodie Carneiro, Jash Mehta, Idriss Abid, et al.. Preindustrial GaN devices developed at the nanofabrication center of IEMN: [Invited]. Transducers 2021, Jun 2021, online, France. ⟨hal-03256885⟩
titre
Preindustrial GaN devices developed at the nanofabrication center of IEMN
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Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. Above 70% PAE in Q-band with AlN/GaN HEMTs structures. WOCSDICE2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03279173⟩
titre
Above 70% PAE in Q-band with AlN/GaN HEMTs structures
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https://hal.archives-ouvertes.fr/hal-03279173/file/Harrouche_VF_template_WOCSDICE2021.pdf BibTex
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Jash Mehta, Idriss Abid, Thi Huong Ngo, Yvon Cordier, F Medjdoub. AlGaN/GaN HEMTs on AlN substrate for power electronics. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom. ⟨hal-03279160⟩
titre
AlGaN/GaN HEMTs on AlN substrate for power electronics
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https://hal.archives-ouvertes.fr/hal-03279160/file/Mehta_VF_template_WOCSDICE2021.pdf BibTex
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F Medjdoub. Reliability Oriented Design of GaN Transistor. Material Research Society, Apr 2021, phoenix, United States. ⟨hal-03298846⟩
titre
Reliability Oriented Design of GaN Transistor
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Special issue

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F Medjdoub. Special issue on wide bandgap based devices: design, fabrication and applications: [Editorial]. MDPI. Micromachines, 12 (1), MDPI, 2021, Wide bandgap based devices: design, fabrication and applications, ⟨10.3390/mi12010083⟩. ⟨hal-03111514⟩
titre
Special issue on wide bandgap based devices: design, fabrication and applications
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https://hal.archives-ouvertes.fr/hal-03111514/file/micromachines-12-00083.pdf BibTex

2020

Journal articles

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E. Chikoidze, T. Tchelidze, C. Sartel, Z. Chi, R. Kabouche, et al.. Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3. Materials Today Physics, 2020, 15, 100263, 9 p. ⟨10.1016/j.mtphys.2020.100263⟩. ⟨hal-02984814⟩
titre
Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3
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https://hal.archives-ouvertes.fr/hal-02984814/file/2020%20Chikoidze%20High%20electric%20field%20-HAL.pdf BibTex
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Alessandro Caria, Carlo de Santi, Ezgi Dogmus, F Medjdoub, Enrico Zanoni, et al.. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors. Electronics, 2020, 9 (11), pp.1840. ⟨10.3390/electronics9111840⟩. ⟨hal-03028077⟩
titre
Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors
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https://hal.archives-ouvertes.fr/hal-03028077/file/electronics-09-01840.pdf BibTex
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Sven Besendörfer, Elke Meissner, F Medjdoub, Joff Derluyn, Jochen Friedrich, et al.. The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. Scientific Reports, 2020, 10 (1), 17252, 12 p. ⟨10.1038/s41598-020-73977-2⟩. ⟨hal-03028120⟩
titre
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
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https://hal.archives-ouvertes.fr/hal-03028120/file/s41598-020-73977-2.pdf BibTex
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Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Gaudenzio Meneghesso, Idriss Abid, et al.. High breakdown voltage and low buffer trapping in superlattice GaN-on-silicon heterostructures for high voltage applications. Materials, 2020, 13 (19), pp.4271. ⟨10.3390/ma13194271⟩. ⟨hal-03028113⟩
titre
High breakdown voltage and low buffer trapping in superlattice GaN-on-silicon heterostructures for high voltage applications
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https://hal.archives-ouvertes.fr/hal-03028113/file/materials-13-04271.pdf BibTex
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Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, et al.. Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures. physica status solidi (a), 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩. ⟨hal-02363323⟩
titre
Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures
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https://hal.archives-ouvertes.fr/hal-02363323/file/pssaRiad.pdf BibTex
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Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo de Santi, Davide Benazzi, et al.. Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment. Micromachines, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩. ⟨hal-03028138⟩
titre
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment
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https://hal.archives-ouvertes.fr/hal-03028138/file/micromachines-11-00101.pdf BibTex
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S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. Freitas, et al.. Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics, 2020, 127 (1), pp.015701. ⟨10.1063/1.5129248⟩. ⟨hal-02429980⟩
titre
Vertical breakdown of GaN on Si due to V-pits
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https://hal.archives-ouvertes.fr/hal-02429980/file/1.5129248.pdf BibTex
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Katir Ziouche, Ibrahim Bel-Hadj, Zahia Bougrioua. Utilisation du silicium nanostructuré dans un générateur thermoélectrique pour la réduction des pertes thermiques. Entropie : thermodynamique – énergie – environnement – économie, 2020, 1 (1), 10 p. ⟨10.21494/ISTE.OP.2020.0493⟩. ⟨hal-02906722⟩
titre
Utilisation du silicium nanostructuré dans un générateur thermoélectrique pour la réduction des pertes thermiques
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https://hal.archives-ouvertes.fr/hal-02906722/file/Ziouche_2020_entropie.pdf BibTex

Conference papers

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Riad Kabouche, Kathia Harrouche, F Medjdoub. Vers des composants GaN fiables délivrant de haute performance en gamme d'ondes millimétriques: [Invité]. RF & Microwave 2020, 9ème Salon Radiofréquences, Hyperfréquences, Wireless, CEM et Fibre Optique, Sep 2020, Paris, France. ⟨hal-03342668⟩
titre
Vers des composants GaN fiables délivrant de haute performance en gamme d'ondes millimétriques
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Idriss Abid, Riad Kabouche, F Medjdoub, Sven Besendörfer, Elke Meissner, et al.. Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020), Sep 2020, Vienne, Austria. pp.310-312, ⟨10.1109/ISPSD46842.2020.9170170⟩. ⟨hal-03044195⟩
titre
Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure
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https://hal.archives-ouvertes.fr/hal-03044195/file/ispsd-2020-paper%202115.pdf BibTex
ref_biblio
Tahar Kadi, Marc Duquennoy, Katir Ziouche, Mohammadi Ouaftouh, Nikolay Smagin. Dispersion of IDT-induced high-frequency surface acoustic waves - Application to the mechanical and dimensional characterization of mesoporous silicon. IEEE International Ultrasonics Symposium 2020, IUS2020, Sep 2020, Las Vegas, United States. pp.4, ⟨10.1109/IUS46767.2020.9251563⟩. ⟨hal-03322825⟩
titre
Dispersion of IDT-induced high-frequency surface acoustic waves - Application to the mechanical and dimensional characterization of mesoporous silicon
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ref_biblio
Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz. IEEE/MTT-S International Microwave Symposium (IMS 2020), Aug 2020, Los Angeles, CA, United States. Session Tu3H - Advances in Microwave Semiconductor Devices, paper Tu3H-2, 285-288, ⟨10.1109/IMS30576.2020.9223971⟩. ⟨hal-03043653⟩
titre
High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz
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https://hal.archives-ouvertes.fr/hal-03043653/file/Abstract-IMS2020-final.pdf BibTex
ref_biblio
Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, et al.. Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs. 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2020, Singapour, Singapore. pp.1-6, ⟨10.1109/IPFA49335.2020.9260793⟩. ⟨hal-03043453⟩
titre
Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-03043453/file/padova-IPT.pdf BibTex
ref_biblio
R. Kabouche, K. Harrouche, Etienne Okada, F Medjdoub. Short-term reliability of high performance Q-band AlN/GaN HEMTs. IEEE International Reliability Physics Symposium (IRPS 2020), Apr 2020, Dallas, TX, United States. pp.1-6, ⟨10.1109/IRPS45951.2020.9129322⟩. ⟨hal-03044147⟩
titre
Short-term reliability of high performance Q-band AlN/GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-03044147/file/2020-IRPS-Abstract-final.pdf BibTex
ref_biblio
F Medjdoub. AlN-based power devices: [Invited]. 56th Annual Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2020, Feb 2020, Palm Springs, CA, United States. ⟨hal-03342714⟩
titre
AlN-based power devices
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Book sections

ref_biblio
Kathia Harrouche, F Medjdoub. GaN-based HEMTs for mm-wave applications. Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices, 2020, ISBN 978-3-527-34710-0 ; e-ISBN 978-3-527-82525-7. ⟨hal-03287288⟩
titre
GaN-based HEMTs for mm-wave applications
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https://hal.archives-ouvertes.fr/hal-03287288/file/chapter-Farid-final.pdf BibTex

Other publications

ref_biblio
Markus Behet, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub. Optimising GaN heterostructures for 5G. Compound Semiconductors, 26, 1, 2020. ⟨hal-03342380⟩
titre
Optimising GaN heterostructures for 5G
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Poster communications

ref_biblio
Ibrahim Bel-Hadj, Zahia Bougrioua, K. Ziouche. Improvement of performance of a planar micro-thermoelectric generator for energy harvesting Application. 3rd IEEE Sensors France International Workshop, Nov 2020, Lille, France. , 2020. ⟨hal-03901959⟩
titre
Improvement of performance of a planar micro-thermoelectric generator for energy harvesting Application
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2019

Journal articles

ref_biblio
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cédric Masante, et al.. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates. Micromachines, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩. ⟨hal-02344992⟩
titre
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
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https://hal.archives-ouvertes.fr/hal-02344992/file/micromachines-10-00690.pdf BibTex
ref_biblio
Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, V Gao Zhan, Carlo de Santi, et al.. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. Microelectronics Reliability, 2019, 100-101, pp.113388. ⟨10.1016/j.microrel.2019.06.080⟩. ⟨hal-02356749⟩
titre
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-02356749/file/MR_2019_IEMN.pdf BibTex
ref_biblio
Georges Pavlidis, Samuel Kim, Idriss Abid, Malek Zegaoui, F Medjdoub, et al.. The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs. IEEE Electron Device Letters, 2019, 40 (7), pp.1060-1063. ⟨10.1109/LED.2019.2915984⟩. ⟨hal-02356736⟩
titre
The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs
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https://hal.archives-ouvertes.fr/hal-02356736/file/08710321.pdf BibTex
ref_biblio
Riad Kabouche, Romain Pecheux, Kathia Harrouche, Etienne Okada, F Medjdoub, et al.. High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation. International Journal of High Speed Electronics and Systems, 2019, 28 (01n02), pp.1940003. ⟨10.1142/S0129156419400032⟩. ⟨hal-02356733⟩
titre
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
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https://hal.archives-ouvertes.fr/hal-02356733/file/ijhses%20final.pdf BibTex
ref_biblio
M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, et al.. Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩
titre
Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02382779/file/Rzin_TED_revised_august2019_main_document_FINAL.pdf BibTex
ref_biblio
Jun Lu, Jr-Tai Chen, Martin Dahlqvist, Riad Kabouche, F Medjdoub, et al.. Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors. Applied Physics Letters, 2019, 115 (22), pp.221601. ⟨10.1063/1.5123374⟩. ⟨hal-02400602⟩
titre
Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
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https://hal.archives-ouvertes.fr/hal-02400602/file/APL.pdf BibTex
ref_biblio
Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, et al.. Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability, 2019, 100-101, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩. ⟨hal-02356751⟩
titre
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
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https://hal.archives-ouvertes.fr/hal-02356751/file/1-s2.0-S0026271419305189-main.pdf BibTex
ref_biblio
Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation. IEEE Journal of the Electron Devices Society, 2019, 7, pp.1145-1150. ⟨10.1109/JEDS.2019.2952314⟩. ⟨hal-02357492⟩
titre
High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation
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https://hal.archives-ouvertes.fr/hal-02357492/file/08894405.pdf BibTex

Conference papers

ref_biblio
Kamel Haddadi, Christophe Loyez, Katir Ziouche. Six-port technology for millimeter-wave metrology. 6th IEEE-Antennas-and-Propagation-Society (IEEE AP-S) Topical Meeting on Antenna Measurements & Applications (CAMA), Oct 2019, Bali, Indonesia. pp.81-84, ⟨10.1109/CAMA47423.2019.8959806⟩. ⟨hal-03224646⟩
titre
Six-port technology for millimeter-wave metrology
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ref_biblio
Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, Veronica Gao Zhan, Carlo de Santi, et al.. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048726⟩
titre
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
Accès au texte intégral et bibtex
https://hal.archives-ouvertes.fr/hal-03048726/file/ESREF_2019_VF.pdf BibTex
ref_biblio
Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, et al.. Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048194⟩
titre
Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment
Accès au texte intégral et bibtex
https://hal.archives-ouvertes.fr/hal-03048194/file/ESREF_2019_Borga_rev3.pdf BibTex
ref_biblio
F Medjdoub. GaN integration on silicon for high power devices. European Materials Research Society (E-MRS) Fall 2019, Sep 2019, Warsaw, Poland. ⟨hal-03287384⟩
titre
GaN integration on silicon for high power devices
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ref_biblio
S Besendörfer, E Meissner, F Medjdoub. Direct observation of V-pit induced vertical n-type columns disrupting vertical breakdown of AlGaN/GaN-HEMT heterostructures on Si. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287411⟩
titre
Direct observation of V-pit induced vertical n-type columns disrupting vertical breakdown of AlGaN/GaN-HEMT heterostructures on Si
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ref_biblio
Riad Kabouche, Idriss Abid, Malek Zegaoui, Roland Püsche, Joff Derluyn, et al.. Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287421⟩
titre
Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures
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ref_biblio
F Medjdoub. Towards higher voltage in III-Nitride devices. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287436⟩
titre
Towards higher voltage in III-Nitride devices
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ref_biblio
Idriss Abid, Riad Kabouche, Malek Zegaoui, C. Bougerol, Rémi Comyn, et al.. Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287398⟩
titre
Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates
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ref_biblio
Carlo de Santi, Alessandro Caria, N Renso, Ezgi Dogmus, Malek Zegaoui, et al.. Photon-driven degradation processes in GaN-based optoelectronic devices. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287430⟩
titre
Photon-driven degradation processes in GaN-based optoelectronic devices
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ref_biblio
Matteo Borga, Matteo Meneghini, Davide Benazzi, Roland Püsche, Joff Derluyn, et al.. GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356883⟩
titre
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current
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https://hal.archives-ouvertes.fr/hal-02356883/file/WOCSDICE2019_Borga.pdf BibTex
ref_biblio
K. Harrouche, Riad Kabouche, Malek Zegaoui, F Medjdoub. Scaling of AlN/GaN HEMT for millimeter-wave power applications. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356889⟩
titre
Scaling of AlN/GaN HEMT for millimeter-wave power applications
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https://hal.archives-ouvertes.fr/hal-02356889/file/papier%20wocsdice%20Kathia.pdf BibTex
ref_biblio
Idriss Abid, Riad Kabouche, Malek Zegaoui, C. Bougerol, Rémi Comyn, et al.. AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356886⟩
titre
AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer
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https://hal.archives-ouvertes.fr/hal-02356886/file/wocsdice_final.pdf BibTex
ref_biblio
Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Riad Kabouche, Idriss Abid, et al.. Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356881⟩
titre
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V
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https://hal.archives-ouvertes.fr/hal-02356881/file/Wocsdice_abs_final.pdf BibTex
ref_biblio
Katir Ziouche, Ibrahim Bel-Hadj, Z. Bougrioua. Optimisation de la collecte de chaleur d'un microgénérateur thermoélectrique planaire. CIFQ2019, 14° Colloque Int. Franco-Québécois en Energie, Jun 2019, Baie St-Paut, Canada. proceedings, ART-055, pp. 1-6. ⟨hal-02414536⟩
titre
Optimisation de la collecte de chaleur d'un microgénérateur thermoélectrique planaire
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ref_biblio
Ibrahim Bel-Hadj, Z. Bougrioua, Katir Ziouche. Modélisation et optimisation de la structure géométrique d'un microgénérateur thermoélectrique planaire. TELECOM'2019 & 11èmes JFMMA, Jun 2019, Saidia, Maroc. ⟨hal-02414487⟩
titre
Modélisation et optimisation de la structure géométrique d'un microgénérateur thermoélectrique planaire
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https://hal.archives-ouvertes.fr/hal-02414487/file/Article%20JFMMA_2019_Ibrahim_Bel-hadj%20%20bis.pdf BibTex
ref_biblio
Riad Kabouche, Idriss Abid, Malek Zegaoui, Kai Cheng, F Medjdoub. Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States. ⟨hal-02356891⟩
titre
Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
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https://hal.archives-ouvertes.fr/hal-02356891/file/2019_CS_MANTECH_Medjdoub_final.pdf BibTex

Poster communications

ref_biblio
Zahia Bougrioua, Ibrahim Bel-Hadj, Katir Ziouche. Optimizing heat harvesting in a membrane based planar µTEG: modelling and fabrication, & vice versa. ECT 2019 – 17th European Conference on Thermoelectrics, Sep 2019, Limassol, Cyprus. . ⟨hal-02906736⟩
titre
Optimizing heat harvesting in a membrane based planar µTEG: modelling and fabrication, & vice versa
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https://hal.archives-ouvertes.fr/hal-02906736/file/ECT2019%2C%20ZB%2C%20Optimizing%20heat%20harvesting%20in%20a%20membrane%20based%20planar%20%C2%B5TEG%20modelling%2C%20fab%C2%B0%20%26%20vice%20versa.pdf BibTex
ref_biblio
Ibrahim Bel-Hadj, Zahia Bougrioua, Katir Ziouche. Modélisation et optimisation d'un microgénérateur thermoélectrique planaire. Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France. , 2019. ⟨hal-03888756⟩
titre
Modélisation et optimisation d'un microgénérateur thermoélectrique planaire
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2018

Journal articles

ref_biblio
Stéphanie Rennesson, Mathieu Leroux, Mohamed Al Khalfioui, Maud Nemoz, Sebastien Chenot, et al.. Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE. physica status solidi (a), 2018, 215 (9), pp.1700640. ⟨10.1002/pssa.201700640⟩. ⟨hal-02322484⟩
titre
Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE
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ref_biblio
Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, et al.. GaN-Based Laser Wireless Power Transfer System. Materials, 2018, 11 (1), pp.153. ⟨10.3390/ma11010153⟩. ⟨hal-02356738⟩
titre
GaN-Based Laser Wireless Power Transfer System
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https://hal.archives-ouvertes.fr/hal-02356738/file/materials-11-00153.pdf BibTex
ref_biblio
Carlo de Santi, Alessandro Caria, Nicola Renso, Ezgi Dogmus, Malek Zegaoui, et al.. Evidence of optically induced degradation in gallium nitride optoelectronic devices. Applied Physics Express, 2018, 11 (11), pp.111002. ⟨10.7567/APEX.11.111002⟩. ⟨hal-02356737⟩
titre
Evidence of optically induced degradation in gallium nitride optoelectronic devices
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https://hal.archives-ouvertes.fr/hal-02356737/file/APL%202018%20Optically-induced%20degradation%20rev4.pdf BibTex
ref_biblio
Ezgi Dogmus, Malek Zegaoui, F Medjdoub. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap. Applied Physics Express, 2018, 11 (3), pp.034102. ⟨10.7567/APEX.11.034102⟩. ⟨hal-02356739⟩
titre
GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap
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https://hal.archives-ouvertes.fr/hal-02356739/file/Dogmus_2018_Appl._Phys._Express_11_034102.pdf BibTex
ref_biblio
Souheyla Fakiri, Alex Montagne, Khadidja Rahmoun, Alain Iost, Katir Ziouche. Mechanical properties of porous silicon and oxidized porous silicon by nanoindentation technique. Materials Science and Engineering: A, 2018, 711, pp.470-475. ⟨10.1016/j.msea.2017.11.013⟩. ⟨hal-03183489⟩
titre
Mechanical properties of porous silicon and oxidized porous silicon by nanoindentation technique
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Conference papers

ref_biblio
Idriss Abid, Riad Kabouche, Malek Zegaoui, F Medjdoub. Next generation of GaN-on-Silicon power devices. 4th IEEE International Conference on Emerging Electronics, Dec 2018, Bengaluru, India. ⟨hal-03287820⟩
titre
Next generation of GaN-on-Silicon power devices
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ref_biblio
R Pecheux, Riad Kabouche, Malek Zegaoui, J T Chen, O Kordina, et al.. First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects. International Workshop on Nitride Semiconductors, IWN 2018, Nov 2018, Kanazawa, Japan. ⟨hal-03288139⟩
titre
First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects
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ref_biblio
Alaleh Tajalli, Idriss Abid, Riad Kabouche, Malek Zegaoui, Matteo Meneghini, et al.. High voltage GaN-on-silicon with low-trapping up to 1200 V. International Workshop on Nitride Semiconductors, Nov 2018, Kanazawa, Japan. ⟨hal-03288133⟩
titre
High voltage GaN-on-silicon with low-trapping up to 1200 V
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ref_biblio
R Pecheux, Riad Kabouche, Malek Zegaoui, F Medjdoub. Novel heterostructures for millimeter-wave GaN devices. Asia-Pacific Microwave Conference (APMC), Nov 2018, kyoto, Japan. ⟨hal-03287819⟩
titre
Novel heterostructures for millimeter-wave GaN devices
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ref_biblio
Romain Pécheux, Riad Kabouche, Malek Zegaoui, J T Chen, O Kordina, et al.. GaN-based transistors using buffer-free heterostructures for next generation RF devices. 9th Wide Band Gap Semiconductor and Components Workshop, Oct 2018, Harwell, Ireland. ⟨hal-02356908⟩
titre
GaN-based transistors using buffer-free heterostructures for next generation RF devices
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https://hal.archives-ouvertes.fr/hal-02356908/file/ESA%20full%20paper.pdf BibTex
ref_biblio
Riad Kabouche, Joff Derluyn, Roland Püsche, Stefan Degroote, Marianne Germain, et al.. Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.5-8, ⟨10.23919/EuMIC.2018.8539962⟩. ⟨hal-02356753⟩
titre
Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
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https://hal.archives-ouvertes.fr/hal-02356753/file/paper_eumw_2018.pdf BibTex
ref_biblio
Mohamed Bouslama, Ahmad Al Hajjar, Raphaël Sommet, Jean-Christophe Nallatamby, F Medjdoub. Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.333-336, ⟨10.23919/EuMIC.2018.8539941⟩. ⟨hal-02356757⟩
titre
Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate
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https://hal.archives-ouvertes.fr/hal-02356757/file/EUMW_2018_trap_model_paper.pdf BibTex
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Alaleh Tajalli, Idriss Abid, Riad Kabouche, Malek Zegaoui, Matteo Meneghini, et al.. Towards low-trapping GaN-on-silicon material system for 1200 V applications. European Material Research Society Fall 2018, Sep 2018, Warsaw, Poland. ⟨hal-03287736⟩
titre
Towards low-trapping GaN-on-silicon material system for 1200 V applications
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ref_biblio
Farah Bouazzaoui, Marie Pierre Chauvat, Magali Morales, Malek Zegaoui, F Medjdoub, et al.. Optimized ohmic contacts for InAlGaN/GaN HEMTs. International Symposium on Growth of III-Nitrides, Aug 2018, Warsaw, Poland. ⟨hal-03287822⟩
titre
Optimized ohmic contacts for InAlGaN/GaN HEMTs
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Romain Pécheux, Riad Kabouche, Etienne Okada, Malek Zegaoui, F Medjdoub. C-doped AlN/GaN HEMTs for High efficiency mmW applications. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2018), Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430021⟩. ⟨hal-02356756⟩
titre
C-doped AlN/GaN HEMTs for High efficiency mmW applications
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https://hal.archives-ouvertes.fr/hal-02356756/file/inmmic.pdf BibTex
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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, et al.. Degradation of InGaN-based optoelectronic devices under electrical and optical stress. 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE), Jun 2018, Naples, Italy. ⟨hal-03288175⟩
titre
Degradation of InGaN-based optoelectronic devices under electrical and optical stress
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Romain Pécheux, Guillaume Ducournau, Riad Kabouche, Etienne Okada, Christian Mondolot, et al.. Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band. 16èmes Journées Nano, Micro, et Optoélectronique, JNMO 2018, Jun 2018, Agay, France. ⟨hal-02356912⟩
titre
Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band
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https://hal.archives-ouvertes.fr/hal-02356912/file/JNMO_VF.pdf BibTex
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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, et al.. Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices. COMPOUND SEMICONDUCTOR WEEK 2018, May 2018, Cambridge, United States. ⟨hal-03287725⟩
titre
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices
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Riad Kabouche, Romain Pecheux, Léna Chenu, Tommy Defais, Zegaoui Malek, et al.. GaN HEMTs for millimeter-wave applications: Status and Challenges. Microwave and Millimeter-wave GaN - Wafer to IC Workshop, Apr 2018, Cardiff, United Kingdom. ⟨hal-03287821⟩
titre
GaN HEMTs for millimeter-wave applications: Status and Challenges
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Riad Kabouche, Romain Pecheux, Zegaoui Malek, F Medjdoub. Current status and challenges of GaN millimeter-wave transistors: [Invited]. GaN Marathon 2.0, Apr 2018, Padova, Italy. ⟨hal-03287817⟩
titre
Current status and challenges of GaN millimeter-wave transistors
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https://hal.archives-ouvertes.fr/hal-03287817/file/GaN%20Marathon%202.0%20invited%20Farid%20Medjdoub.pdf BibTex
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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, et al.. Degradation processes and origin in InGaN-based high-power photodetectors. Gallium Nitride Materials and Devices XIII, Jan 2018, San Francisco, United States. pp.54, ⟨10.1117/12.2289466⟩. ⟨hal-02356755⟩
titre
Degradation processes and origin in InGaN-based high-power photodetectors
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Other publications

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Gaudenzio Meneghesso, Joff Derluyn, Elke Meissner, F Medjdoub, Abhishek Banerjee, et al.. Pushing the limits of GaN-based power devices and power electronics. 2018, pp.52-55. ⟨hal-03287707⟩
titre
Pushing the limits of GaN-based power devices and power electronics
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https://hal.archives-ouvertes.fr/hal-03287707/file/Bodos_Power_2018_08.pdf BibTex