Publications HAL de la structure 1296;1066983;1079230

2022

Journal articles

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Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, F Medjdoub, et al.. Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template. Journal of Applied Physics, American Institute of Physics, 2022, 131 (12), pp.124501. ⟨10.1063/5.0077107⟩. ⟨hal-03619060⟩
titre
Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template
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https://hal.archives-ouvertes.fr/hal-03619060/file/Bassaler%20JAP%202022.pdf BibTex
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Fouzi Haddad, Mustapha Hatti, Khadidja Rahmoun, Katir Ziouche. Selective Surfaces for Photo-Thermal Conversion for Medium Solar Temperature Applications. International Journal of Heat and Technology, International Information and Engineering Technology Association, 2022, 40 (1), pp.219-224. ⟨10.18280/ijht.400126⟩. ⟨hal-03662793⟩
titre
Selective Surfaces for Photo-Thermal Conversion for Medium Solar Temperature Applications
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Conference papers

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F Medjdoub. High power-added-efficiency millimeter-wave GaN HEMTs: [Invited]. GaN marathon 2022, Jun 2022, Venice, Italy. ⟨hal-03637096⟩
titre
High power-added-efficiency millimeter-wave GaN HEMTs
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Kathia Harrouche, Sri Saran Vankatachalam, Elodie Carneiro, François Grandpierron, F Medjdoub. Status and progress of millimeter-wave GaN transistors for next generation high-power radar systems: [Invited]. 8th International Conference on Antennas and Electromagnetic Systems, AES 2022, May 2022, Marrakesh, Morocco. ⟨hal-03682395⟩
titre
Status and progress of millimeter-wave GaN transistors for next generation high-power radar systems
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F Medjdoub, Jash Mehta, Idriss Abid, Yvon Cordier, Fabrice Semond. AlGaN Channel HEMTs for High Voltage Applications: [Invited]. 2022 MRS Spring Meeting & Exhibit, May 2022, Honolulu, United States. pp.EQ01.14.01. ⟨hal-03682413⟩
titre
AlGaN Channel HEMTs for High Voltage Applications
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F Medjdoub, Jash Mehta, Idriss Abid, Yvon Cordier, Fabrice Semond. AlGaN Channel HEMTs for High Voltage Applications. Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, EQ01.14, MRS 2022 spring meeting, May 2022, Honolulu (Online), United States. ⟨hal-03637419⟩
titre
AlGaN Channel HEMTs for High Voltage Applications
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Kathia Harrouche, Sri Saran Vankatachalam, François Grandpierron, Etienne Okada, F Medjdoub. Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V. European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. pp.223, session 5B - B Plasmas & Gas. ⟨hal-03677311⟩
titre
Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V
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Idriss Abid, Youssef Hamdaoui, Jash Mehta, F Medjdoub. High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures. European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. ⟨hal-03677266⟩
titre
High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures
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Julien Bassaler, Rémi Comyn, C. Bougerol, Yvon Cordier, F Medjdoub, et al.. Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681788⟩
titre
Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template
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Reda Elwaradi, C. Bougerol, Jash Mehta, Maud Nemoz, F Medjdoub, et al.. Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681811⟩
titre
Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate
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Elodie Carneiro, Stephanie Rennesson, Sébastian Tamariz, Fabrice Semond, F Medjdoub. Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field. WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal. ⟨hal-03681838⟩
titre
Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field
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F Medjdoub. [Webinar] Towards high performance mm-wave GaN power transistors. pCoE - GaN Research and Development (GRAND) Webinar Series, Indian Institute of technology Madras, Apr 2022, Online, India. ⟨hal-03637279⟩
titre
[Webinar] Towards high performance mm-wave GaN power transistors
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F Medjdoub. Technological development towards high performance millimeter-wave GaN HEMTs and enhanced reliability. 16th European Microwave Integrated Circuits Conference, EuMIC 2021, Workshop WS06 EuMIC/EuMC - Progress and Status of Gallium Nitride Monolithic Microwave Integrated Circuits, EuMIC/EuMC/EuMW, Apr 2022, London, United Kingdom. ⟨hal-03637246⟩
titre
Technological development towards high performance millimeter-wave GaN HEMTs and enhanced reliability
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F Medjdoub. [Workshop] Electronics. Ganex winter school on the physics and applications of nitrides, Labex Ganex, Mar 2022, Autrans, France. ⟨hal-03637118⟩
titre
[Workshop] Electronics
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2021

Journal articles

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Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, et al.. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs. Microelectronics Reliability, Elsevier, 2021, 123, pp.114199. ⟨10.1016/j.microrel.2021.114199⟩. ⟨hal-03287632⟩
titre
Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-03287632/file/MR_20201201.pdf BibTex
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Idriss Abid, Jash Mehta, Yvon Cordier, Joff Derluyn, Stefan Degroote, et al.. AlGaN channel high electron mobility transistors with regrown ohmic contacts. Electronics, MDPI, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩. ⟨hal-03164517⟩
titre
AlGaN channel high electron mobility transistors with regrown ohmic contacts
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https://hal.archives-ouvertes.fr/hal-03164517/file/electronics-10-00635.pdf BibTex
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Katir Ziouche, Ibrahim Bel-Hadj, Zahia Bougrioua. Thermoelectric properties of nanostructured porous-polysilicon thin films. Nano Energy, Elsevier, 2021, 80, pp.105553. ⟨10.1016/j.nanoen.2020.105553⟩. ⟨hal-02990079⟩
titre
Thermoelectric properties of nanostructured porous-polysilicon thin films
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https://hal.archives-ouvertes.fr/hal-02990079/file/Ziouche_NANOEN_105553_2021.pdf BibTex
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Idriss Abid, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Kai Cheng, et al.. GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal. Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2021, 14 (3), pp.036501. ⟨10.35848/1882-0786/abdca0⟩. ⟨hal-03113165⟩
titre
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal
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https://hal.archives-ouvertes.fr/hal-03113165/file/Abid_2021_Appl._Phys._Express_14_036501.pdf BibTex
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Matteo Meneghini, Carlo de Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, et al.. GaN-based power devices: Physics, reliability, and perspectives. Journal of Applied Physics, American Institute of Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩. ⟨hal-03421528⟩
titre
GaN-based power devices: Physics, reliability, and perspectives
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https://hal.archives-ouvertes.fr/hal-03421528/file/JAP%20Tutorial%20HEMT%20FINAL.pdf BibTex

Conference papers

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Ajay Shanbhag, F Medjdoub, Anjan Chakravorty, Nandita Dasgupta, Amitava Dasgupta. Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs. 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Dec 2021, Monterey, virtual, United States. ⟨10.1109/BCICTS50416.2021.9682203⟩. ⟨hal-03421537⟩
titre
Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-03421537/file/Ajay_BCICTS_2021.pdf BibTex
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F Medjdoub. GaN RF and power research at IEMN. C3NiT - Centre Day, Swedish Center for III-Nitride Technology, Nov 2021, Linkoping, Sweden. ⟨hal-03508582⟩
titre
GaN RF and power research at IEMN
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Ekaterina Chikoidze, Amador Perez, Corinne Sartel, Zeyu Chi, Vincent Sallet, et al.. Gallia(Ga2O3): fascinating electronic properties: [Invited]. International Union of Materials Research Societies - International Conference in Asia 2021, IUMRS-ICA 2021, Session MoJ1 - Power Semiconductor Materials and Devices, Oct 2021, Jeju Island, South Korea. ⟨hal-03373733⟩
titre
Gallia(Ga2O3): fascinating electronic properties
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F Medjdoub. Prospects of ultrawide bandgap materials and devices: [Invited]. International Union of Materials Research Societies - International Conference in Asia 2021, IUMRS-ICA 2021, Session IX - Semiconductor Materials and Devices, Oct 2021, Jeju Island, South Korea. ⟨hal-03359397⟩
titre
Prospects of ultrawide bandgap materials and devices
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K Harrouche, W Rili, E Carneiro, Jash Mehta, I Abid, et al.. Preindustrial GaN devices developed at the nanofabrication center of IEMN: [Invited]. Transducers 2021, Jun 2021, online, France. ⟨hal-03256885⟩
titre
Preindustrial GaN devices developed at the nanofabrication center of IEMN
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Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. Above 70% PAE in Q-band with AlN/GaN HEMTs structures. WOCSDICE2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03279173⟩
titre
Above 70% PAE in Q-band with AlN/GaN HEMTs structures
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https://hal.archives-ouvertes.fr/hal-03279173/file/Harrouche_VF_template_WOCSDICE2021.pdf BibTex
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Jash Mehta, Idriss Abid, Thi Huong Ngo, Yvon Cordier, F Medjdoub. AlGaN/GaN HEMTs on AlN substrate for power electronics. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom. ⟨hal-03279160⟩
titre
AlGaN/GaN HEMTs on AlN substrate for power electronics
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https://hal.archives-ouvertes.fr/hal-03279160/file/Mehta_VF_template_WOCSDICE2021.pdf BibTex
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F Medjdoub. Reliability Oriented Design of GaN Transistor. Material Research Society, Apr 2021, phoenix, United States. ⟨hal-03298846⟩
titre
Reliability Oriented Design of GaN Transistor
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Directions of work or proceedings

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F Medjdoub. Special issue on wide bandgap based devices: design, fabrication and applications: [Editorial]. MDPI. Micromachines, 12 (1), MDPI, 2021, Wide bandgap based devices: design, fabrication and applications, ⟨10.3390/mi12010083⟩. ⟨hal-03111514⟩
titre
Special issue on wide bandgap based devices: design, fabrication and applications
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https://hal.archives-ouvertes.fr/hal-03111514/file/micromachines-12-00083.pdf BibTex

2020

Journal articles

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E. Chikoidze, T. Tchelidze, C. Sartel, Z. Chi, R. Kabouche, et al.. Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3. Materials Today Physics, Elsevier, 2020, 15, 100263, 9 p. ⟨10.1016/j.mtphys.2020.100263⟩. ⟨hal-02984814⟩
titre
Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3
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https://hal.archives-ouvertes.fr/hal-02984814/file/2020%20Chikoidze%20High%20electric%20field%20-HAL.pdf BibTex
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Alessandro Caria, Carlo de Santi, Ezgi Dogmus, F Medjdoub, Enrico Zanoni, et al.. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors. Electronics, Penton Publishing Inc., 2020, 9 (11), pp.1840. ⟨10.3390/electronics9111840⟩. ⟨hal-03028077⟩
titre
Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors
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https://hal.archives-ouvertes.fr/hal-03028077/file/electronics-09-01840.pdf BibTex
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Sven Besendörfer, Elke Meissner, F Medjdoub, Joff Derluyn, Jochen Friedrich, et al.. The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. Scientific Reports, Nature Publishing Group, 2020, 10 (1), 17252, 12 p. ⟨10.1038/s41598-020-73977-2⟩. ⟨hal-03028120⟩
titre
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
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https://hal.archives-ouvertes.fr/hal-03028120/file/s41598-020-73977-2.pdf BibTex
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Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, et al.. High breakdown voltage and low buffer trapping in superlattice GaN-on-silicon heterostructures for high voltage applications. Materials, MDPI, 2020, 13 (19), pp.4271. ⟨10.3390/ma13194271⟩. ⟨hal-03028113⟩
titre
High breakdown voltage and low buffer trapping in superlattice GaN-on-silicon heterostructures for high voltage applications
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https://hal.archives-ouvertes.fr/hal-03028113/file/materials-13-04271.pdf BibTex
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Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, et al.. Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures. physica status solidi (a), Wiley, 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩. ⟨hal-02363323⟩
titre
Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures
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https://hal.archives-ouvertes.fr/hal-02363323/file/pssaRiad.pdf BibTex
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Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo de Santi, Davide Benazzi, et al.. Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment. Micromachines, MDPI, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩. ⟨hal-03028138⟩
titre
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment
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https://hal.archives-ouvertes.fr/hal-03028138/file/micromachines-11-00101.pdf BibTex
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S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. Freitas, et al.. Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics, American Institute of Physics, 2020, 127 (1), pp.015701. ⟨10.1063/1.5129248⟩. ⟨hal-02429980⟩
titre
Vertical breakdown of GaN on Si due to V-pits
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https://hal.archives-ouvertes.fr/hal-02429980/file/1.5129248.pdf BibTex
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Katir Ziouche, Ibrahim Bel-Hadj, Zahia Bougrioua. Utilisation du silicium nanostructuré dans un générateur thermoélectrique pour la réduction des pertes thermiques. Entropie : thermodynamique – énergie – environnement – économie, 2020, 1 (1), 10 p. ⟨10.21494/ISTE.OP.2020.0493⟩. ⟨hal-02906722⟩
titre
Utilisation du silicium nanostructuré dans un générateur thermoélectrique pour la réduction des pertes thermiques
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https://hal.archives-ouvertes.fr/hal-02906722/file/Ziouche_2020_entropie.pdf BibTex

Conference papers

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Riad Kabouche, Kathia Harrouche, F Medjdoub. Vers des composants GaN fiables délivrant de haute performance en gamme d'ondes millimétriques: [Invité]. RF & Microwave 2020, 9ème Salon Radiofréquences, Hyperfréquences, Wireless, CEM et Fibre Optique, Sep 2020, Paris, France. ⟨hal-03342668⟩
titre
Vers des composants GaN fiables délivrant de haute performance en gamme d'ondes millimétriques
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I. Abid, R. Kabouche, F Medjdoub, S. Besendörfer, E. Meissner, et al.. Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020), Sep 2020, Vienne, Austria. pp.310-312, ⟨10.1109/ISPSD46842.2020.9170170⟩. ⟨hal-03044195⟩
titre
Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure
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https://hal.archives-ouvertes.fr/hal-03044195/file/ispsd-2020-paper%202115.pdf BibTex
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Tahar Kadi, Marc Duquennoy, Katir Ziouche, Mohammadi Ouaftouh, Nikolay Smagin. Dispersion of IDT-induced high-frequency surface acoustic waves - Application to the mechanical and dimensional characterization of mesoporous silicon. IEEE International Ultrasonics Symposium 2020, IUS2020, Sep 2020, Las Vegas, United States. pp.4, ⟨10.1109/IUS46767.2020.9251563⟩. ⟨hal-03322825⟩
titre
Dispersion of IDT-induced high-frequency surface acoustic waves - Application to the mechanical and dimensional characterization of mesoporous silicon
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Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz. IEEE/MTT-S International Microwave Symposium (IMS 2020), Aug 2020, Los Angeles, CA, United States. Session Tu3H - Advances in Microwave Semiconductor Devices, paper Tu3H-2, 285-288, ⟨10.1109/IMS30576.2020.9223971⟩. ⟨hal-03043653⟩
titre
High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz
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https://hal.archives-ouvertes.fr/hal-03043653/file/Abstract-IMS2020-final.pdf BibTex
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Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, et al.. Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs. 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2020, Singapour, Singapore. pp.1-6, ⟨10.1109/IPFA49335.2020.9260793⟩. ⟨hal-03043453⟩
titre
Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-03043453/file/padova-IPT.pdf BibTex
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R. Kabouche, K. Harrouche, Etienne Okada, F Medjdoub. Short-term reliability of high performance Q-band AlN/GaN HEMTs. IEEE International Reliability Physics Symposium (IRPS 2020), Apr 2020, Dallas, TX, United States. pp.1-6, ⟨10.1109/IRPS45951.2020.9129322⟩. ⟨hal-03044147⟩
titre
Short-term reliability of high performance Q-band AlN/GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-03044147/file/2020-IRPS-Abstract-final.pdf BibTex
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F Medjdoub. AlN-based power devices: [Invited]. 56th Annual Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2020, Feb 2020, Palm Springs, CA, United States. ⟨hal-03342714⟩
titre
AlN-based power devices
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Book sections

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Kathia Harrouche, F Medjdoub. GaN-based HEMTs for mm-wave applications. Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices, 2020, ISBN 978-3-527-34710-0 ; e-ISBN 978-3-527-82525-7. ⟨hal-03287288⟩
titre
GaN-based HEMTs for mm-wave applications
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https://hal.archives-ouvertes.fr/hal-03287288/file/chapter-Farid-final.pdf BibTex

Other publications

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Markus Behet, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub. Optimising GaN heterostructures for 5G. Compound Semiconductors, 26, 1, 2020. ⟨hal-03342380⟩
titre
Optimising GaN heterostructures for 5G
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2019

Journal articles

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Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cédric Masante, et al.. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates. Micromachines, MDPI, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩. ⟨hal-02344992⟩
titre
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
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https://hal.archives-ouvertes.fr/hal-02344992/file/micromachines-10-00690.pdf BibTex
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M. Rzin, M. Meneghini, F. Rampazzo, V Gao Zhan, C de Santia, et al.. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113388. ⟨10.1016/j.microrel.2019.06.080⟩. ⟨hal-02356749⟩
titre
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-02356749/file/MR_2019_IEMN.pdf BibTex
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Georges Pavlidis, Samuel Kim, Idriss Abid, Malek Zegaoui, F Medjdoub, et al.. The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2019, 40 (7), pp.1060-1063. ⟨10.1109/LED.2019.2915984⟩. ⟨hal-02356736⟩
titre
The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs
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https://hal.archives-ouvertes.fr/hal-02356736/file/08710321.pdf BibTex
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Riad Kabouche, Romain Pecheux, Kathia Harrouche, Etienne Okada, F Medjdoub, et al.. High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation. International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2019, 28 (01n02), pp.1940003. ⟨10.1142/S0129156419400032⟩. ⟨hal-02356733⟩
titre
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
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https://hal.archives-ouvertes.fr/hal-02356733/file/ijhses%20final.pdf BibTex
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Jun Lu, Jr-Tai Chen, Martin Dahlqvist, Riad Kabouche, F Medjdoub, et al.. Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors. Applied Physics Letters, American Institute of Physics, 2019, 115 (22), pp.221601. ⟨10.1063/1.5123374⟩. ⟨hal-02400602⟩
titre
Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
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https://hal.archives-ouvertes.fr/hal-02400602/file/APL.pdf BibTex
ref_biblio
M. Borga, M. Meneghini, D. Benazzi, E. Canato, R. Püsche, et al.. Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩. ⟨hal-02356751⟩
titre
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
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https://hal.archives-ouvertes.fr/hal-02356751/file/1-s2.0-S0026271419305189-main.pdf BibTex
ref_biblio
Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation. IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2019, 7, pp.1145-1150. ⟨10.1109/JEDS.2019.2952314⟩. ⟨hal-02357492⟩
titre
High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation
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https://hal.archives-ouvertes.fr/hal-02357492/file/08894405.pdf BibTex

Conference papers

ref_biblio
Kamel Haddadi, Christophe Loyez, Katir Ziouche. Six-port technology for millimeter-wave metrology. 6th IEEE-Antennas-and-Propagation-Society (IEEE AP-S) Topical Meeting on Antenna Measurements & Applications (CAMA), Oct 2019, Bali, Indonesia. pp.81-84, ⟨10.1109/CAMA47423.2019.8959806⟩. ⟨hal-03224646⟩
titre
Six-port technology for millimeter-wave metrology
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ref_biblio
M Rzin, M Meneghini, F Rampazzo, V Gao Zhan, C de Santi, et al.. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048726⟩
titre
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
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https://hal.archives-ouvertes.fr/hal-03048726/file/ESREF_2019_VF.pdf BibTex
ref_biblio
M Borga, M Meneghini, D Benazzi, E Canato, R Püsche, et al.. Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048194⟩
titre
Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment
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https://hal.archives-ouvertes.fr/hal-03048194/file/ESREF_2019_Borga_rev3.pdf BibTex
ref_biblio
F Medjdoub. GaN integration on silicon for high power devices. European Materials Research Society (E-MRS) Fall 2019, Sep 2019, Warsaw, Poland. ⟨hal-03287384⟩
titre
GaN integration on silicon for high power devices
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R Kabouche, I Abid, M Zegaoui, R Püsche, J Derluyn, et al.. Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287421⟩
titre
Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures
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ref_biblio
F Medjdoub. Towards higher voltage in III-Nitride devices. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287436⟩
titre
Towards higher voltage in III-Nitride devices
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S Besendörfer, E Meissner, F Medjdoub. Direct observation of V-pit induced vertical n-type columns disrupting vertical breakdown of AlGaN/GaN-HEMT heterostructures on Si. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287411⟩
titre
Direct observation of V-pit induced vertical n-type columns disrupting vertical breakdown of AlGaN/GaN-HEMT heterostructures on Si
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I Abid, R Kabouche, M Zegaoui, C Bougerol, R Comyn, et al.. Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287398⟩
titre
Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates
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C de Santi, A Caria, N Renso, E Dogmus, M Zegaoui, et al.. Photon-driven degradation processes in GaN-based optoelectronic devices. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287430⟩
titre
Photon-driven degradation processes in GaN-based optoelectronic devices
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I Abid, R Kabouche, M. Zegaoui, C. Bougerol, R. Comyn, et al.. AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356886⟩
titre
AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer
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https://hal.archives-ouvertes.fr/hal-02356886/file/wocsdice_final.pdf BibTex
ref_biblio
M. Borga, M. Meneghini, D Benazzi, R Püsche, J Derluyn, et al.. GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356883⟩
titre
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current
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https://hal.archives-ouvertes.fr/hal-02356883/file/WOCSDICE2019_Borga.pdf BibTex
ref_biblio
K. Harrouche, R Kabouche, M. Zegaoui, F Medjdoub. Scaling of AlN/GaN HEMT for millimeter-wave power applications. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356889⟩
titre
Scaling of AlN/GaN HEMT for millimeter-wave power applications
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https://hal.archives-ouvertes.fr/hal-02356889/file/papier%20wocsdice%20Kathia.pdf BibTex
ref_biblio
A Tajalli, M. Meneghini, R Kabouche, I Abid, M. Zegaoui, et al.. Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356881⟩
titre
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V
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https://hal.archives-ouvertes.fr/hal-02356881/file/Wocsdice_abs_final.pdf BibTex
ref_biblio
Katir Ziouche, Ibrahim Bel-Hadj, Z. Bougrioua. Optimisation de la collecte de chaleur d'un microgénérateur thermoélectrique planaire. CIFQ2019, 14° Colloque Int. Franco-Québécois en Energie, Jun 2019, Baie St-Paut, Canada. proceedings, ART-055, pp. 1-6. ⟨hal-02414536⟩
titre
Optimisation de la collecte de chaleur d'un microgénérateur thermoélectrique planaire
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Ibrahim Bel-Hadj, Z. Bougrioua, Katir Ziouche. Modélisation et optimisation de la structure géométrique d'un microgénérateur thermoélectrique planaire. TELECOM'2019 & 11èmes JFMMA, Jun 2019, Saidia, Maroc. ⟨hal-02414487⟩
titre
Modélisation et optimisation de la structure géométrique d'un microgénérateur thermoélectrique planaire
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https://hal.archives-ouvertes.fr/hal-02414487/file/Article%20JFMMA_2019_Ibrahim_Bel-hadj%20%20bis.pdf BibTex
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R Kabouche, I Abid, M. Zegaoui, K Cheng, F Medjdoub. Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States. ⟨hal-02356891⟩
titre
Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
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https://hal.archives-ouvertes.fr/hal-02356891/file/2019_CS_MANTECH_Medjdoub_final.pdf BibTex

Poster communications

ref_biblio
Zahia Bougrioua, Ibrahim Bel-Hadj, Katir Ziouche. Optimizing heat harvesting in a membrane based planar µTEG: modelling and fabrication, & vice versa. ECT 2019 – 17th European Conference on Thermoelectrics, Sep 2019, Limassol, Cyprus. ⟨hal-02906736⟩
titre
Optimizing heat harvesting in a membrane based planar µTEG: modelling and fabrication, & vice versa
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https://hal.archives-ouvertes.fr/hal-02906736/file/ECT2019%2C%20ZB%2C%20Optimizing%20heat%20harvesting%20in%20a%20membrane%20based%20planar%20%C2%B5TEG%20modelling%2C%20fab%C2%B0%20%26%20vice%20versa.pdf BibTex

2018

Journal articles

ref_biblio
Stéphanie Rennesson, Mathieu Leroux, Mohamed Al Khalfioui, Maud Nemoz, Sebastien Chenot, et al.. Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE. physica status solidi (a), Wiley, 2018, 215 (9), pp.1700640. ⟨10.1002/pssa.201700640⟩. ⟨hal-02322484⟩
titre
Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE
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Ezgi Dogmus, Malek Zegaoui, F Medjdoub. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap. Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2018, 11 (3), pp.034102. ⟨10.7567/APEX.11.034102⟩. ⟨hal-02356739⟩
titre
GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap
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https://hal.archives-ouvertes.fr/hal-02356739/file/Dogmus_2018_Appl._Phys._Express_11_034102.pdf BibTex
ref_biblio
Carlo de Santi, Alessandro Caria, Nicola Renso, Ezgi Dogmus, Malek Zegaoui, et al.. Evidence of optically induced degradation in gallium nitride optoelectronic devices. Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2018, 11 (11), pp.111002. ⟨10.7567/APEX.11.111002⟩. ⟨hal-02356737⟩
titre
Evidence of optically induced degradation in gallium nitride optoelectronic devices
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https://hal.archives-ouvertes.fr/hal-02356737/file/APL%202018%20Optically-induced%20degradation%20rev4.pdf BibTex
ref_biblio
Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, et al.. GaN-Based Laser Wireless Power Transfer System. Materials, MDPI, 2018, 11 (1), pp.153. ⟨10.3390/ma11010153⟩. ⟨hal-02356738⟩
titre
GaN-Based Laser Wireless Power Transfer System
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https://hal.archives-ouvertes.fr/hal-02356738/file/materials-11-00153.pdf BibTex
ref_biblio
Souheyla Fakiri, Alex Montagne, Khadidja Rahmoun, Alain Iost, Katir Ziouche. Mechanical properties of porous silicon and oxidized porous silicon by nanoindentation technique. Materials Science and Engineering: A, Elsevier, 2018, 711, pp.470-475. ⟨10.1016/j.msea.2017.11.013⟩. ⟨hal-03183489⟩
titre
Mechanical properties of porous silicon and oxidized porous silicon by nanoindentation technique
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Conference papers

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I Abid, R Kabouche, M Zegaoui, F Medjdoub. Next generation of GaN-on-Silicon power devices. 4th IEEE International Conference on Emerging Electronics, Dec 2018, Bengaluru, India. ⟨hal-03287820⟩
titre
Next generation of GaN-on-Silicon power devices
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R Pecheux, R Kabouche, M Zegaoui, J T Chen, O Kordina, et al.. First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects. International Workshop on Nitride Semiconductors, IWN 2018, Nov 2018, Kanazawa, Japan. ⟨hal-03288139⟩
titre
First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects
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A Tajalli, I Abid, R Kabouche, M Zegaoui, M Meneghini, et al.. High voltage GaN-on-silicon with low-trapping up to 1200 V. International Workshop on Nitride Semiconductors, Nov 2018, Kanazawa, Japan. ⟨hal-03288133⟩
titre
High voltage GaN-on-silicon with low-trapping up to 1200 V
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R Pecheux, R Kabouche, M Zegaoui, F Medjdoub. Novel heterostructures for millimeter-wave GaN devices. Asia-Pacific Microwave Conference (APMC), Nov 2018, kyoto, Japan. ⟨hal-03287819⟩
titre
Novel heterostructures for millimeter-wave GaN devices
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R Pecheux, R Kabouche, M. Zegaoui, J T Chen, O Kordina, et al.. GaN-based transistors using buffer-free heterostructures for next generation RF devices. 9th Wide Band Gap Semiconductor and Components Workshop, Oct 2018, Harwell, Ireland. ⟨hal-02356908⟩
titre
GaN-based transistors using buffer-free heterostructures for next generation RF devices
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https://hal.archives-ouvertes.fr/hal-02356908/file/ESA%20full%20paper.pdf BibTex
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R. Kabouche, J. Derluyn, R. Pusche, S. Degroote, M. Germain, et al.. Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.5-8, ⟨10.23919/EuMIC.2018.8539962⟩. ⟨hal-02356753⟩
titre
Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
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https://hal.archives-ouvertes.fr/hal-02356753/file/paper_eumw_2018.pdf BibTex
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Mohamed Bouslama, Ahmad Al Hajjar, Raphaël Sommet, Jean-Christophe Nallatamby, F Medjdoub. Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.333-336, ⟨10.23919/EuMIC.2018.8539941⟩. ⟨hal-02356757⟩
titre
Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate
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https://hal.archives-ouvertes.fr/hal-02356757/file/EUMW_2018_trap_model_paper.pdf BibTex
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A Tajalli, I Abid, R Kabouche, M Zegaoui, M Meneghini, et al.. Towards low-trapping GaN-on-silicon material system for 1200 V applications. European Material Research Society Fall 2018, Sep 2018, Warsaw, Poland. ⟨hal-03287736⟩
titre
Towards low-trapping GaN-on-silicon material system for 1200 V applications
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Farah Bouazzaoui, Marie Pierre Chauvat, Magali Morales, Malek Zegaoui, F Medjdoub, et al.. Optimized ohmic contacts for InAlGaN/GaN HEMTs. International Symposium on Growth of III-Nitrides, Aug 2018, Warsaw, Poland. ⟨hal-03287822⟩
titre
Optimized ohmic contacts for InAlGaN/GaN HEMTs
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R. Pecheux, R. Kabouche, Etienne Okada, M. Zegaoui, F Medjdoub. C-doped AlN/GaN HEMTs for High efficiency mmW applications. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2018), Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430021⟩. ⟨hal-02356756⟩
titre
C-doped AlN/GaN HEMTs for High efficiency mmW applications
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https://hal.archives-ouvertes.fr/hal-02356756/file/inmmic.pdf BibTex
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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, et al.. Degradation of InGaN-based optoelectronic devices under electrical and optical stress. 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE), Jun 2018, Naples, Italy. ⟨hal-03288175⟩
titre
Degradation of InGaN-based optoelectronic devices under electrical and optical stress
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Romain Pécheux, Guillaume Ducournau, Riad Kabouche, Etienne Okada, Christian Mondolot, et al.. Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band. 16èmes Journées Nano, Micro, et Optoélectronique, JNMO 2018, Jun 2018, Agay, France. ⟨hal-02356912⟩
titre
Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band
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https://hal.archives-ouvertes.fr/hal-02356912/file/JNMO_VF.pdf BibTex
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Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, et al.. Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices. COMPOUND SEMICONDUCTOR WEEK 2018, May 2018, Cambridge, United States. ⟨hal-03287725⟩
titre
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices
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Riad Kabouche, Romain Pecheux, Léna Chenu, Tommy Defais, Zegaoui Malek, et al.. GaN HEMTs for millimeter-wave applications: Status and Challenges. Microwave and Millimeter-wave GaN - Wafer to IC Workshop, Apr 2018, Cardiff, United Kingdom. ⟨hal-03287821⟩
titre
GaN HEMTs for millimeter-wave applications: Status and Challenges
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Riad Kabouche, Romain Pecheux, Zegaoui Malek, F Medjdoub. Current status and challenges of GaN millimeter-wave transistors: [Invited]. GaN Marathon 2.0, Apr 2018, Padova, Italy. ⟨hal-03287817⟩
titre
Current status and challenges of GaN millimeter-wave transistors
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https://hal.archives-ouvertes.fr/hal-03287817/file/GaN%20Marathon%202.0%20invited%20Farid%20Medjdoub.pdf BibTex
ref_biblio
Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, et al.. Degradation processes and origin in InGaN-based high-power photodetectors. Gallium Nitride Materials and Devices XIII, Jan 2018, San Francisco, France. pp.54, ⟨10.1117/12.2289466⟩. ⟨hal-02356755⟩
titre
Degradation processes and origin in InGaN-based high-power photodetectors
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Other publications

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Gaudenzio Meneghesso, Joff Derluyn, Elke Meissner, F Medjdoub, Abhishek Banerjee, et al.. Pushing the limits of GaN-based power devices and power electronics. 2018, pp.52-55. ⟨hal-03287707⟩
titre
Pushing the limits of GaN-based power devices and power electronics
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https://hal.archives-ouvertes.fr/hal-03287707/file/Bodos_Power_2018_08.pdf BibTex